Low gate to source cut off voltage 600V MOSFET ARK micro DMZ6001E for telecom and amplifier circuits

Key Attributes
Model Number: DMZ6001E
Product Custom Attributes
Mfr. Part #:
DMZ6001E
Package:
SOT-23
Product Description

DMZ6001E Provisional Datasheet

The DMZ6001E is a 600V N-Channel Depletion Mode Power MOSFET from ARK Microelectronics. It features a low gate-to-source cut-off voltage, a depletion mode (normally-on) operation, and is built using proprietary advanced planar technology with a rugged polysilicon gate cell structure. This MOSFET offers fast switching speeds and is RoHS compliant, with a halogen-free option available. It is suitable for applications such as SMPS start-up circuits, linear amplifiers, constant current sources, and telecom systems.

Product Attributes

  • Brand: ARK Microelectronics Co., Ltd.
  • Product Code: DMZ6001E
  • Certifications: RoHS Compliant, Halogen-free available
  • Origin: Chengdu, Sichuan

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitTest Conditions
Drain-to-Source Breakdown VoltageBVDSX600----VVGS = -5V, ID = 250A
Drain-to-Source Leakage CurrentID(off)----1AVDS = 600V, VGS = -5V
Gate-to-Source Leakage CurrentIGSS----5AVGS = 20V, VDS = 0V
Saturated Drain-to-Source CurrentIDSS2--20mAVGS = 0V, VDS = 25V
Static Drain-to-Source On-ResistanceRDS(on)--110200VGS = 0V, ID = 2mA
Gate-to-Source Cut-off VoltageVGS(off)-1.1---0.5VVDS = 3V, ID = 8A
Input CapacitanceCiss--34.5--pFVGS = -5V, VDS = 25V, f = 1.0MHz
Output CapacitanceCoss--9.2--pFVGS = -5V, VDS = 25V, f = 1.0MHz
Reverse Transfer CapacitanceCrss--2.6--pFVGS = -5V, VDS = 25V, f = 1.0MHz
Total Gate ChargeQg--0.97--nCVGS = -5V to 5V, VDD = 300V, ID = 1mA
Gate-to-Source ChargeQgs--0.37--nCVGS = -5V to 5V, VDD = 300V, ID = 1mA
Gate-to-Drain (Miller) ChargeQgd--0.23--nCVGS = -5V to 5V, VDD = 300V, ID = 1mA
Turn-on Delay Timetd(on)--0.89--nsVGS = -5V to 5V, VDD = 10V, ID = 1mA, RG = 6
Rise Timetr--8.7--nsVGS = -5V to 5V, VDD = 10V, ID = 1mA, RG = 6
Turn-off Delay Timetd(off)--2.3--nsVGS = -5V to 5V, VDD = 10V, ID = 1mA, RG = 6
Fall Timetf--57.7--nsVGS = -5V to 5V, VDD = 10V, ID = 1mA, RG = 6
Diode Forward VoltageVSD----1.2VISD = 2mA, VGS = -5V

2512091725_ARK-micro-DMZ6001E_C53133423.pdf

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