Depletion mode MOSFET ARK micro DMZ1521E optimized for telecom infrastructure and converter circuits
Key Attributes
Model Number:
DMZ1521E
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
200mA
RDS(on):
15Ω@0V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
3.3pF
Number:
1 N-channel
Output Capacitance(Coss):
5.4pF
Input Capacitance(Ciss):
12.8pF
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
3nC
Mfr. Part #:
DMZ1521E
Package:
SOT-23
Product Description
DMZ1521E High-threshold Voltage Depletion-Mode Power MOSFET
The DMZ1521E is a high-threshold voltage, depletion-mode power MOSFET from ARK Microelectronics Co., Ltd. It features a proprietary advanced planar technology with a rugged polysilicon gate cell structure, offering ESD improved capability and fast switching speeds. This device is designed for applications requiring normally-on switches, synchronous rectification, linear amplifiers, converters, current sources, and in telecom infrastructure.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, China
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSX | -- | -- | 150 | V | TA=25 unless otherwise specified |
| Drain-to-Gate Voltage | VDGX | -- | -- | 150 | V | TA=25 unless otherwise specified |
| Continuous Drain Current | ID | -- | -- | 0.2 | A | TA=25 unless otherwise specified |
| Pulsed Drain Current | IDM | -- | -- | 0.6 | A | TA=25 unless otherwise specified [2] |
| Power Dissipation | PD | -- | -- | 0.50 | W | TA=25 unless otherwise specified |
| Gate-to-Source Voltage | VGS | -- | -- | ±20 | V | TA=25 unless otherwise specified |
| Soldering Temperature | TL | -- | -- | 300 | Distance of 1.6mm from case for 10 seconds | |
| Operating and Storage Temperature Range | TJ and TSTG | -55 | -- | 150 | -- | |
| Electrical Characteristics | ||||||
| OFF Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSX | 150 | -- | -- | V | VGS=-15V, ID=250µA |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 10 | µA | VDS=150VVGS= -15V |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 1.0 | mA | VDS=150VVGS= -15V TJ=125 |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 20 | uA | VGS=+20V, VDS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 20 | uA | VGS=-20V, VDS=0V |
| ON Characteristics | ||||||
| Saturated Drain-to-Source Current | IDSS | 200 | -- | -- | mA | VGS=0V, VDS=25V |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 10 | 15 | Ω | VGS=0VID=200mA [3] |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -7 | -- | -5 | V | VDS =3V, ID=8µA |
| Forward Transconductance | gfs | -- | 0.24 | -- | S | VDS =10V, ID=100mA |
| Dynamic Characteristics | ||||||
| Input Capacitance | CISS | -- | 12.8 | -- | pF | VGS=-10V VDS=25V f=1.0MHZ |
| Output Capacitance | COSS | -- | 5.4 | -- | pF | VGS=-10V VDS=25V f=1.0MHZ |
| Reverse Transfer Capacitance | CRSS | -- | 3.3 | -- | pF | VGS=-10V VDS=25V f=1.0MHZ |
| Total Gate Charge | QG | -- | 3 | -- | nC | VDS=75V, ID=200mA |
| Gate-to-Source Charge | QGS | -- | 0.23 | -- | nC | VDS=75V, ID=200mA |
| Gate-to-Drain (Miller) Charge | QGD | -- | 1.1 | -- | nC | VDS=75V, ID=200mA |
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(ON) | -- | 7 | -- | ns | VGS = -10V~0V VDD = 75V, ID=200mA RG = 20Ohm |
| Rise Time | trise | -- | 16 | -- | ns | VGS = -10V~0V VDD = 75V, ID=200mA RG = 20Ohm |
| Turn-off Delay Time | td(OFF) | -- | 25 | -- | ns | VGS = -10V~0V VDD = 75V, ID=200mA RG = 20Ohm |
| Fall Time | tfall | -- | 120 | -- | ns | VGS = -10V~0V VDD = 75V, ID=200mA RG = 20Ohm |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD =200 mA, VGS = -15 V |
2410121618_ARK-micro-DMZ1521E_C3031415.pdf
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