Low RDS on Power MOSFET 100V N Channel ASDsemi ASDM100R160NKQ R for Hard Switched and UPS Power Circuits
Key Attributes
Model Number:
ASDM100R160NKQ-R
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
399pF
Pd - Power Dissipation:
72W
Input Capacitance(Ciss):
1.135nF
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
ASDM100R160NKQ-R
Package:
TO-252
Product Description
Product Overview
The Ascend Semiconductor ASDM100R160NKQ is a 100V N-Channel Power MOSFET designed for power switching applications. It features low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity, making it suitable for hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its fast switching and soft recovery characteristics further enhance its performance in demanding applications.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Line: Ascend Semicondutor
- Package Type: TO-252
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Description | ||||||
| Drain-source Voltage | VDS | 100 | V | |||
| RDS(on),Typ@ VGS=10 V | RDS(ON) | VGS= 10V, ID=20A | 14 | 17 | m | |
| Drain Current | ID | TC=25 | 45 | A | ||
| Drain Current | ID | TC=100 | 28.5 | A | ||
| Pulsed Drain Current | IDM | 180 | A | |||
| Avalanche energy | EAS | 81 | mJ | |||
| Total Power Dissipation | PD | Tc=25 | 72 | W | ||
| Total Power Dissipation | PD | Tc=100 | 28.8 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient | RJA | t10S | 15 | 20 | /W | |
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | 40 | 50 | /W | |
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 1.35 | 1.7 | /W | |
| Static Parameter | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1 | 1.8 | 3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=20A | 17 | 21.5 | m | |
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | 1.3 | V | ||
| Maximum Body-Diode Continuous Current | IS | 45 | A | |||
| Gate resistance | RG | f= 1 MHz, Open drain | 1 | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHZ | 1135 | pF | ||
| Output Capacitance | Coss | 399 | pF | |||
| Reverse Transfer Capacitance | Crss | pF | ||||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V,VDS=50V,ID=25A | 16 | nC | ||
| Gate-Source Charge | Qgs | 5.6 | nC | |||
| Gate-Drain Charge | Qg | 2.4 | nC | |||
| Reverse Recovery Chrage | Qrr | IF=20A, di/dt=100A/us | 42 | nC | ||
| Reverse Recovery Time | trr | 39.8 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=50V,ID=25A RGEN=2.2 | 39.2 | ns | ||
| Turn-on Rise Time | tr | 11 | ns | |||
| Turn-off Delay Time | tD(off) | 53.2 | ns | |||
| Turn-off fall Time | tf | 15.8 | ns | |||
| Ordering and Marking Information | ||||||
| Device No. | ASDM100R160NKQ-R | |||||
| Marking | 100R160N | |||||
| Package | TO-252 | |||||
| Packing | Tape&Reel | |||||
| Quantity | 2500/Reel | |||||
2410121536_ASDsemi-ASDM100R160NKQ-R_C2972882.pdf
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