86--136 6733 2386
quality ASDsemi ASDM7002EZA R 60V N Channel MOSFET Offering ESD Protection and ROHS Compliance for Electronics factory
quality ASDsemi ASDM7002EZA R 60V N Channel MOSFET Offering ESD Protection and ROHS Compliance for Electronics factory

ASDsemi ASDM7002EZA R 60V N Channel MOSFET Offering ESD Protection and ROHS Compliance for Electronics

Key Attributes
Model Number: ASDM7002EZA-R
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
2.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.7pF
Output Capacitance(Coss):
2.7pF
Pd - Power Dissipation:
360mW
Input Capacitance(Ciss):
26.2pF
Gate Charge(Qg):
1.7nC@10V
Mfr. Part #:
ASDM7002EZA-R
Package:
SOT-23
Product Description

Product Overview

The Ascend Semiconductor ASDM7002EZA is a 60V N-Channel MOSFET designed for direct logic-level interface with TTL/CMOS. It offers reliable and rugged performance, is ROHS compliant & Halogen-Free, and features ESD protection exceeding 2K. This MOSFET is suitable for battery-operated systems and solid-state relays.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Model: ASDM7002EZA
  • Package: SOT-23
  • Compliance: ROHS Compliant & Halogen-Free
  • ESD Protection: ESD>2K

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage ±20 V
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 150 °C
IS Diode Continuous Forward Current 0.3 A
RJA Thermal Resistance-Junction to Ambient Steady State Surface Mounted on 1in2 FR-4 board with 1oz. 350 °C/W
Product Summary
VDSS 60 V
RDS(on),Typ @ VGS=10 V 1.6 2.5 Ω
ID Continuous Drain Current TA=25°C 0.3 A
ID Continuous Drain Current TA=70°C 0.25 A
PD Maximum Power Dissipation TA=25°C 0.36 W
PD Maximum Power Dissipation TA=70°C 0.23 W
Electrical Characteristics (TA=25 °C, unless otherwise noted)
RDS(ON) Drain-Source On-state Resistance VGS=10V, ID=0.3A 1.6 2.5 Ω
RDS(ON) Drain-Source On-state Resistance VGS=4.5V, ID=0.2A 1.9 3.0 Ω
gfs Forward Transconductance VDS=10V, ID=0.2A 0.45 - S
Static Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250µA 60 - - V
IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V - - 1 µA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.0 1.5 2.5 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±10 µA
Dynamic Characteristics
Ciss Input Capacitance VGS=0V, VDS=30V, Freq.=1MHz - 26.2 - pF
Coss Output Capacitance - 2.7 - pF
Crss Reverse Transfer Capacitance - 1.7 - pF
td(ON) Turn-on Delay Time VDD=30V, ID=0.3A, VGS=10V, RGEN=10Ω - 1.0 - nS
tr Turn-on Rise Time - 19.4 - nS
td(OFF) Turn-off Delay Time - 23.2 - nS
tf Turn-off Fall Time - 21 - nS
Qg Total Gate Charge VDS=30V, VGS=4.5V, ID=1A - 0.9 - nC
Qg Total Gate Charge VDS=30V, VGS=10V, ID=1A - 1.7 - nC
Qgs Gate-Source Charge - 0.4 - nC
Qgd Gate-Drain Charge - 0.3 - nC
Source-Drain Characteristics
VSD Diode Forward Voltage IS=0.1A, VGS=0V 0.4 0.8 1.1 V
trr Reverse Recovery Time IF=0.1A,VGS=0, dlF/dt=100A/μs - 7.4 - nS
Qrr Reverse Recovery Charge - 2.3 - nC
Ordering and Marking Information
Package Marking Device No. Packing Quantity
SOT-23 7002E ASDM7002EZA-R Tape&Reel 3000/Reel

2410121617_ASDsemi-ASDM7002EZA-R_C2972891.pdf

Related Products
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.