Power MOSFET Dual N Channel ASDsemi ASDM30DN30E R 30 Volt designed for and power management solutions
Key Attributes
Model Number:
ASDM30DN30E-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
108pF
Number:
2 N-Channel
Output Capacitance(Coss):
126pF
Input Capacitance(Ciss):
896pF
Pd - Power Dissipation:
26W
Gate Charge(Qg):
9.82nC@4.5V
Mfr. Part #:
ASDM30DN30E-R
Package:
PDFN3.3x3.3-8
Product Description
Product Overview
The ASDM30DN30E is a 30V Dual N-Channel Power MOSFET from Ascend Semiconductor Co., Ltd. It features advanced high cell density Trench technology, offering 100% EAS Guaranteed, super low gate charge, and excellent CdV/dt effect decline. This MOSFET is designed for high-performance applications requiring efficient power management. It is available as a Green Device.
Product Attributes
- Brand: Ascend Semiconductor Co., Ltd.
- Product Type: Dual N-Channel Power MOSFET
- Technology: Trench Technology
- Environmental: Green Device Available
Technical Specifications
| Product Summary | |||
|---|---|---|---|
| Symbol | Parameter | Typ. | Unit |
| RJA | Thermal Resistance Junction-Ambient | 1 | /W |
| RJC | Thermal Resistance Junction-Case | 1.5 | /W |
| Absolute Maximum Ratings | |||
|---|---|---|---|
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 30 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 16 | A |
| IDM | Pulsed Drain Current | 120 | A |
| EAS | Single Pulse Avalanche Energy | 24.2 | mJ |
| IAS | Avalanche Current | 22 | A |
| PD@TC=25 | Total Power Dissipation | 26 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=15A | --- | 16 | m |
| VGS=4.5V , ID=10A | --- | 24 | VGS | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=15A | 24.4 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.8 | --- | |
| Qg | Total Gate Charge | (4.5V) VDS=15V , VGS=4.5V , ID=12A | 9.82 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.24 | --- | nC |
| Qgd | Gate-Drain Charge | --- | 5.54 | --- | nC |
| Switching Time | Td(on) Turn-On Delay Time | VDD=15V , VGS=10V , RG=1.5 ID=20A | 6.4 | --- | ns |
| Tr Rise Time | --- | 39 | --- | ns | |
| Td(off) Turn-Off Delay Time | --- | 21 | --- | ns | |
| Tf Fall Time | --- | 4.7 | --- | ns | |
| Capacitance | Ciss Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 896 | --- | pF |
| Coss Output Capacitance | --- | 126 | --- | pF | |
| Crss Reverse Transfer Capacitance | --- | 108 | --- | pF | |
| Diode Characteristics | |||||
|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Typ. | Max. | Unit |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | 30 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | 1 | V |
| Package Information | |||
|---|---|---|---|
| Model | Package | Packing Quantity | |
| ASDM30DN30E-R | PDFN3.3*3.3-8 | 5000/Reel | |
| Package Outline Data | ||||
|---|---|---|---|---|
| Symbol | Dimensions (unit: mm) | Min | Typ | Max |
| A | 0.70 | 0.75 | 0.80 | |
| b | 0.25 | 0.30 | 0.35 | |
| c | 0.10 | 0.15 | 0.25 | |
| D | 3.25 | 3.35 | 3.45 | |
| D1 | 3.00 | 3.10 | 3.20 | |
| D2 | 1.78 | 1.88 | 1.98 | |
| D3 | -- | 0.13 | -- | |
| E | 3.20 | 3.30 | 3.40 | |
| E1 | 3.00 | 3.15 | 3.20 | |
| E2 | 2.39 | 2.49 | 2.59 | |
| e | 0.65 BSC | |||
| H | 0.30 | 0.39 | 0.50 | |
| L | 0.30 | 0.40 | 0.50 | |
| L1 | -- | 0.13 | -- | |
| K | 0.30 | -- | -- | |
| -- | 10 | 12 | ||
| M | * * | 0.15 | * | |
2410121606_ASDsemi-ASDM30DN30E-R_C2972862.pdf
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