Super Junction Power MOSFET Bestirpower BMF60N190C1 with Ultra Fast Body Diode and Low Switching Loss
Product Overview
The BMF60N190C1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve very low on-resistance and gate charge. This device offers high efficiency through optimized charge coupling technology, providing advantages such as Low EMI and low switching loss for designers. It is suitable for applications including PC power, server power supplies, telecom equipment, solar inverters, and automotive super chargers. Key features include an ultra-fast body diode and extremely low losses due to very low FOM (Rdson*Qg and Eoss), alongside very high commutation ruggedness.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
- Package Type: TO-220F
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| BVDSS | Drain to Source Voltage1) | 600 | V | |||
| VGSS | Gate to Source Voltage | ±30 | V | |||
| ID | Drain Current2) | VGS = 10 V, (TC = 25) | 20 | A | ||
| ID | Drain Current2) | VGS = 10 V, (TC = 100) | A | |||
| IDM | Drain Current Pulsed | 60 | A | |||
| EAS | Single Pulsed Avalanche Energy3) | 282 | mJ | |||
| IAR | Avalanche Current | 7.5 | A | |||
| dv/dt | MOSFET dv/dt | 50 | V/ns | |||
| Peak Diode Recovery dv/dt4) | 50 | |||||
| PD | Power Dissipation (TC = 25) | W | ||||
| TJ , TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 3.67 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 62.5 | /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 600 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V, TJ = 25 | 1 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS = ±30 V, VDS = 0 V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250µA | 2.5 | 4.5 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 23 A, TJ = 25 | 160 | 190 | mΩ | |
| Ciss | Input Capacitance | VGS = 0 V, VDS = 50V, f = 250 kHz | 1690 | pF | ||
| Coss | Output Capacitance | 78 | pF | |||
| Crss | Reverse transfer capacitance | 3.3 | pF | |||
| Co(tr)1) | Time Related Output Capacitance | VDS = 0 V to 400 V, VGS = 0 V | 245 | pF | ||
| Co(er)2) | Energy Related Output Capacitance | 50 | pF | |||
| Qg(tot) | Total Gate Charge at 10 V | VDD= 400 V, ID = 7 A, VGS = 0 to 10 V | 40 | nC | ||
| Qgs | Gate to Source Charge | 9 | nC | |||
| Qgd | Gate to Drain “Miller” Charge | 17 | nC | |||
| Vplateau | Gate plateau voltage | 6 | V | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 7 A, VGS = 10 V | 64 | ns | ||
| tr | Turn-On Rise Time | 16 | ns | |||
| td(off) | Turn-Off Delay Time | 55 | ns | |||
| tf | Turn-Off Fall Time | 14 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V, IF = 10A, TJ = 25 | 0.85 | V | ||
| trr | Reverse Recovery Time | VR = 400 V, IF = 10A, diF/dt = 100 A/µs | 320 | ns | ||
| Qrr | Reverse Recovery Charge | 2.5 | µC | |||
| Irrm | Peak reverse recovery current | 14 | A | |||
| RG | Gate resistance | f = 1 MHz open drain | 3.5 | Ω | ||
Notes:
1) Limited by Tj max. Maximum duty cycle D=0.75.
2) Pulse width tp limited by Tj,max.
3) VDD=50V, RG=25Ω, Starting Tj=25°C.
4) VDClink=400V; VDS,peak<V(BR)DSS; identical low side and high side switch with identical RG.
1) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V.
2) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V.
2508271658_Bestirpower-BMF60N190C1_C46472749.pdf
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