Low On Resistance 95m Typ 100V N Channel MOSFET ASDsemi ASDM100N15KQ R Suitable for UPS Applications

Key Attributes
Model Number: ASDM100N15KQ-R
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+175℃
RDS(on):
110mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Input Capacitance(Ciss):
932pF@50V
Pd - Power Dissipation:
55W
Gate Charge(Qg):
19.2nC
Mfr. Part #:
ASDM100N15KQ-R
Package:
TO-252
Product Description

Product Overview

The ASDM100N15KQ is a 100V N-Channel MOSFET designed for high-performance applications. It offers a continuous drain current of 15A and a low on-resistance of 95m (Typ.) at VGS = 10V. Key features include low total gate charge, low reverse transfer capacitance, improved dv/dt capability, and fast switching speed, making it suitable for Uninterruptible Power Supply (UPS) and Inverter Systems.

Product Attributes

  • Brand: Ascend Semiconductor Co., Ltd
  • Product Model: ASDM100N15KQ
  • Channel Type: N-CHANNEL
  • Package Type: TO-252
  • Date of Release: NOV 2018
  • Version: 1.0

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Units
Absolute Maximum Ratings (TC=25 unless otherwise specified)
VDSS Drain-Source Voltage 100 V
VGSS Gate-Source Voltage 20 V
ID Continuous Drain Current TC = 25 15 A
TC = 100 10 A
IDM Pulsed Drain Current note1 60 A
PD Power Dissipation TC = 25 55 W
RJC Thermal Resistance, Junction to Case 2.72 /W
TJ, TSTG Operating and Storage Temperature Range -55 +175
Electrical Characteristics (TC=25 unless otherwise specified)
Off Characteristic
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250A 100 - - V
IDSS Zero Gate Voltage Drain Current VDS =100V, VGS = 0V, TJ= 25 - - 1.0 A
IGSS Gate to Body Leakage Current VDS =0V,VGS = 20V - - 100 nA
On Characteristic
VGS(th) Gate Threshold Voltage VDS= VGS, ID=250A 1.0 1.6 3.0 V
RDS(on) Static Drain-Source on-Resistance VGS =10V, ID =10A - 95 110 m
VGS =4.5V, ID =5A - 100 130 m
gFS Forward Transconductance VGS =5V, ID =4A - 2 - S
Dynamic Characteristics
Ciss Input Capacitance VDS =50V, VGS = 0V, f = 1.0MHz - 932 - pF
Coss Output Capacitance - 37 - pF
Crss Reverse Transfer Capacitance - 21 - pF
Qg Total Gate Charge VDS =80V, ID =10A - 19.2 - nC
Qgs Gate-Source Charge - 3.4 - nC
Qgd Gate-Drain(Miller) Charge - 6.1 - nC
Switching Characteristics
td(on) Turn-on Delay Time V GS=10V, VDD=50V, RL=2.8, RREN =6, ID=10A - 12.6 - ns
tr Turn-on Rise Time - 6 - ns
td(off) Turn-off Delay Time - 32.5 - ns
tf Turn-off Fall Time - 4.3 - ns
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain to Source Diode Forward Current - - 15 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, IS=10A - - 1.2 V

Ordering and Marking Information

Package Marking Packing Quantity Ordering Device No.
TO-252 100N15 2500/Reel ASDM100N15KQ-R

Package Mechanical Data (TO-252)

Dimensions (Millimeters) Dimensions (Inches) Ref.
Min. Typ. Max. Min. Typ. Max.
2.10 0.083 A
0 0 A2
0.66 0.026 B
0.40 0.016 C
2.50 0.098 D
0.10 0.004 E
0.86 0.034 G
0.60 0.024 H
0.083 L
6.40 9.50 10.70 0.252 0.374 0.421 V1
0.374 0.421 0.015 0.017 V2
0.053 0.065 L2
5.90 6.30 0.232 0.248 B2
4.47 4.67 0.176 0.184 C2
1.09 1.21 0.043 0.048 D1
5.30 (REF) 0.209 (REF) E1

Reel Specification (TO-252)

Dimensions (Millimeters) Dimensions (Inches) Ref.
Min. Typ. Max. Min. Typ. Max.
15.90 16.10 0.626 0.634 W
1.65 1.85 0.065 0.073 E
7.40 7.60 0.291 0.299 F
1.40 1.60 0.055 0.063 D0
1.40 1.60 0.055 0.063 D1
7.90 10.45 0.311 0.411 P0
10.60 0.417 P1
0.24 0.27 0.009 0.011 P2
4.00 4.10 0.157 0.161 A0
6.90 8.00 0.271 0.315 B0
1.90 2.10 0.075 0.083 K0
10.50 0.413 T
1.75 0.069 t1

2410121606_ASDsemi-ASDM100N15KQ-R_C2972865.pdf

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