ASDM30N100KQ-R MOSFET featuring green device option and low gate charge for load switch applications
ASDM30N100KQ 30V N-Channel MOSFET
Product Overview
The ASDM30N100KQ is a 30V N-Channel MOSFET from Ascend Semiconductor Co., Ltd. Engineered with advanced high cell density Trench technology, this MOSFET offers 100% EAS Guaranteed performance and is available in a Green Device option. Key features include super low gate charge and excellent CdV/dt effect decline, making it ideal for demanding applications such as Lithium-Ion Secondary Batteries, Load Switches, DC-DC converters, Off-line UPS, and Motor Control.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1,6 | 100 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1,6 | 65 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 27.3 | 17.3 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 21.8 | 14 | A | ||
| IDM | Pulsed Drain Current2 | 400 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 175 | mJ | |||
| IAS | Avalanche Current | 53 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 79 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 5.2 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 62 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t 10s) | 25 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 1.8 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.0213 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | --- | 3.3 | 4 | m |
| VGS=4.5V , ID=15A | --- | 5.0 | 6 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 5.73 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55 | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=30A | --- | 26.5 | --- | S |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 100 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 400 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V |
Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=53A.
4. The power dissipation is limited by 175 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
6. Package limitation current is 85A.
Ordering and Marking Information
| Device No. | Marking | Package | Packing | Quantity |
|---|---|---|---|---|
| ASDM30N100KQ-R | 30N100 | TO-252 | Tape&Reel | 2500/Reel |
2410121606_ASDsemi-ASDM30N100KQ-R_C2972854.pdf
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