60V N Channel and P Channel MOSFET ASDsemi ASDM4976S R PowerTrench Package for High Current Handling
Key Attributes
Model Number:
ASDM4976S-R
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
124pF
Input Capacitance(Ciss):
730pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
ASDM4976S-R
Package:
SOP-8
Product Description
Product Overview
The ASDM4976S is a 60V N & P-Channel PowerTrench MOSFET designed for high power and current handling capabilities. This lead-free product is suitable for PWM applications, load switching, and power management. It offers excellent performance with low on-state resistance and fast switching characteristics.
Product Attributes
- Brand: Ascend Semiconductor
- Product Line: PowerTrench
- Package Type: SOP-8
- Material: Lead-free product acquired
- Origin: China (implied by company name and location)
- Date of Release: November 2019
- Version: 1.0
Technical Specifications
| Parameter | Symbol | Condition | N-Channel Min | N-Channel Typ | N-Channel Max | P-Channel Min | P-Channel Typ | P-Channel Max | Unit | |
|---|---|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||||||
| Drain-Source Voltage | VDS | 60 | -60 | V | ||||||
| Gate-Source Voltage | VGS | 20 | 20 | V | ||||||
| Continuous Drain Current | ID | 5 | -4 | A | ||||||
| Pulsed Drain Current (Note 1) | IDM | 20 | -15 | A | ||||||
| Maximum Power Dissipation | PD | 2 | 1.2 | W | ||||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | -55 To 150 | |||||||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||||||
| N-Channel | ||||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V | ||||||
| Zero Gate Voltage Drain Current | IDSS | VDS=48V,VGS=0V | - | 1 | - | -1 | A | |||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | - | 100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 2.5 | -1 | -2.5 | V | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=4A | 40 | 90 | m | |||||
| VGS=4.5V, ID=2A | 50 | 115 | m | |||||||
| Forward Transconductance | gFS | VDS=10V, ID=4.5A | 20 | 12 | S | |||||
| Input Capacitance | Clss | 275 | 730 | PF | ||||||
| Output Capacitance | Coss | 45 | 124 | PF | ||||||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, F=1.0MHz | 35 | 75 | PF | |||||
| Turn-on Delay Time | td(on) | VDD=15V, RL=3, VGS=10V,RGEN=3 | 4.5 | 9 | nS | |||||
| Turn-on Rise Time | tr | 2.5 | 5 | nS | ||||||
| Turn-Off Delay Time | td(off) | 14.5 | 28 | nS | ||||||
| Turn-Off Fall Time | tf | 3.5 | 13.5 | nS | ||||||
| Total Gate Charge | Qg | VDS=30V,ID=4.5 A, VGS=10V | 5.2 | 14 | nC | |||||
| Gate-Source Charge | Qgs | 0.85 | 3.1 | nC | ||||||
| Gate-Drain Charge | Qgd | VDS=30V,ID=4.5 A, VGS=10V | 1.3 | 3 | nC | |||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=3A | - | 1.3 | - | -1.3 | V | |||
| Diode Forward Current (Note 2) | IS | - | 4 | - | -4 | A | ||||
| Ordering and Marking Information | ||||||||||
| Package | SOP-8 | |||||||||
| Marking | 4976 | |||||||||
| Device No. | ASDM4976S-R | |||||||||
| Package | SOP-8 | |||||||||
| Packing | Tape&Reel | |||||||||
| Quantity | 4000 | |||||||||
2410121805_ASDsemi-ASDM4976S-R_C2758243.pdf
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