ASDM3050KQ R 30V N Channel MOSFET by ASDsemi designed for high frequency and power switching circuits
Key Attributes
Model Number:
ASDM3050KQ-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 N-channel
Output Capacitance(Coss):
280pF
Input Capacitance(Ciss):
2nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
ASDM3050KQ-R
Package:
TO-252
Product Description
Product Overview
The ASDM3050KQ is a 30V N-Channel MOSFET designed for power switching applications, including hard switched and high-frequency circuits, and Uninterruptible Power Supplies (UPS). It features a high-density cell design for ultra-low RDS(on), fully characterized avalanche voltage and current for good stability and uniformity with high EAS, and an excellent package for good heat dissipation. The MOSFET also incorporates special process technology for high ESD capability.
Product Attributes
- Brand: Ascend Semiconductor
- Model: ASDM3050KQ
- Technology: N-Channel MOSFET
- Package: TO-252
- Origin: China (implied by company name and location)
- Date: November 2018
- Version: 1.0
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TC=25 unless otherwise noted) | - | - | 30 | V |
| Gate-Source Voltage | VGS | (TC=25 unless otherwise noted) | - | - | ±20 | V |
| Drain Current-Continuous | ID | (TC=25 unless otherwise noted) | - | - | 50 | A |
| Drain Current-Continuous (TC=100) | ID (100) | (TC=25 unless otherwise noted) | - | - | 35 | A |
| Pulsed Drain Current | IDM | (TC=25 unless otherwise noted) | - | - | 140 | A |
| Maximum Power Dissipation | PD | (TC=25 unless otherwise noted) | - | - | 60 | W |
| Derating factor | - | (TC=25 unless otherwise noted) | - | - | 0.4 | W/ |
| Single pulse avalanche energy (Note 5) | EAS | (TC=25 unless otherwise noted) | - | - | 70 | mJ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | (TC=25 unless otherwise noted) | -55 | - | 175 | |
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case (Note 2) | RJC | (TC=25 unless otherwise noted) | - | - | 2.5 | /W |
| Product Summary | ||||||
| V DS | - | - | - | - | 30 | V |
| RDS(on), TYP @ VGS=10 V | - | - | - | 9 | - | m |
| I D | - | - | - | - | 50 | A |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250A | 30 | 33 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.4 | 2 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A | - | 9 | 11 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=5V, ID=20A | - | 11.3 | 14 | m |
| Forward Transconductance | gFS | VDS=5V, ID=20A | 15 | - | - | S |
| Input Capacitance | Clss | - | - | - | 2000 | pF |
| Output Capacitance | Coss | - | - | - | 280 | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1.0MHz | - | - | 160 | pF |
| Turn-on Delay Time | td(on) | VDD=15V, ID=20A, VGS=10V, RGEN=1.8 | - | - | 10 | nS |
| Turn-on Rise Time | tr | VDD=15V, ID=20A, VGS=10V, RGEN=1.8 | - | - | 8 | nS |
| Turn-Off Delay Time | td(off) | VDD=15V, ID=20A, VGS=10V, RGEN=1.8 | - | - | 30 | nS |
| Turn-Off Fall Time | tf | VDD=15V, ID=20A, VGS=10V, RGEN=1.8 | - | - | 5 | nS |
| Total Gate Charge | Qg | - | - | - | 23 | nC |
| Gate-Source Charge | Qgs | - | - | - | 7 | nC |
| Gate-Drain Charge | Qgd | VDS=10V, ID=25A, VGS=10V | - | 4.5 | - | nC |
| Diode Forward Voltage | VSD | VGS=0 V, IS=25A | - | 0.85 | 1.2 | V |
| Diode Forward Current | IS | (Note 2) | - | - | 50 | A |
| Reverse Recovery Time | trr | TJ = 25C, IF = 50A, di/dt = 100A/s (Note 3) | - | - | 35 | nS |
| Reverse Recovery Charge | Qrr | TJ = 25C, IF = 50A, di/dt = 100A/s (Note 3) | - | 11 | 18 | nC |
Ordering and Marking Information
| Device No. | Marking | Package | Packing | Quantity |
|---|---|---|---|---|
| ASDM3050KQ-R | 3050 | TO-252 | Tape&Reel | 2500 |
2410121738_ASDsemi-ASDM3050KQ-R_C2758229.pdf
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