Power Management P Channel MOSFET ASDsemi ASDM2301ZA R 20V Lead Free SOT 23 Semiconductor Component
Key Attributes
Model Number:
ASDM2301ZA-R
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
-
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
12nC@2.5V
Mfr. Part #:
ASDM2301ZA-R
Package:
SOT-23
Product Description
Product Overview
The ASDM2301ZA is a 20V P-Channel MOSFET from Ascend Semiconductor, designed for high power and current handling capabilities. This lead-free product is suitable for PWM applications, load switching, and power management. It features a SOT-23 surface mount package for efficient integration into various electronic designs.
Product Attributes
- Brand: Ascend Semiconductor
- Product Type: P-Channel MOSFET
- Package: SOT-23
- Lead Free: Yes
- Origin: China (implied by company name and location)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Drain Current-Continuous | ID | -3 | A | |||
| Drain Current - Pulsed (Note 1) | IDM | -10 | A | |||
| Maximum Power Dissipation | PD | 1 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 125 | °/W | |||
| Off Characteristics (TA=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=-250A | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | µA | ||
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250µA | -0.4 | -0.65 | -1 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | 65 | 85 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V, ID=-2A | 83 | 120 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V, ID=-2.8A | 9.5 | S | ||
| Dynamic Characteristics (Note 4) | ||||||
| Input Capacitance | Clss | 405 | PF | |||
| Output Capacitance | Coss | 75 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=-10V, VGS=0V, F=1.0MHz | 55 | PF | ||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=10Ω | 11 | nS | ||
| Turn-on Rise Time | tr | 35 | nS | |||
| Turn-Off Delay Time | td(off) | 30 | nS | |||
| Turn-Off Fall Time | tf | 10 | nS | |||
| Total Gate Charge | Qg | 3.3 | 12 | nC | ||
| Gate-Source Charge | Qgs | 0.7 | nC | |||
| Gate-Drain Charge | Qgd | VDS=-10V, ID=-3A, VGS=-2.5V | 1.3 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V, IS=1.3A | -1.2 | V | ||
| Diode Forward Current (Note 2) | IS | -1.3 | A | |||
| Model | ASDM2301ZA | |||||
| Package Type | SOT23 | |||||
| Packing Quantity | Tape&Reel | 3000/Reel | ||||
| Marking | A1SHB | |||||
2411220140_ASDsemi-ASDM2301ZA-R_C2758220.pdf
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