Silicon Carbide Schottky Diode 650V 10A Bestirpower BCH65S10D4 for Operation in Switch Mode Power Supplies

Key Attributes
Model Number: BCH65S10D4
Product Custom Attributes
Reverse Leakage Current (Ir):
50nA@650V
Voltage - Forward(Vf@If):
1.4V@10A
Current - Rectified:
10A
Mfr. Part #:
BCH65S10D4
Package:
TO-220-2
Product Description

Product Overview

The BCH65S10D4 is a 650V, 10A Silicon Carbide Schottky Diode from Bestirpower, utilizing advanced SiC diode technology. This diode offers excellent low forward voltage and robustness, making it suitable for applications requiring high power efficiency. Key benefits include negligible reverse recovery, high-speed switching, and a positive temperature coefficient, leading to temperature-independent switching. Its design helps reduce system size and cost while ensuring high reliability. Ideal for switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies.

Product Attributes

  • Brand: Bestirpower
  • Material: Silicon Carbide (SiC)
  • Technology: Schottky Diode
  • Compliance: RoHS compliant

Technical Specifications

Symbol Parameter Value Unit
Model BCH65S10D4 650V, 10A
VRRM Repetitive Peak Reverse Voltage 650 V
IF (TC=154) Forward Current 10 A
TC Case Temperature for IF 154
QC Total Capacitive Charge 31 nC
IF,SM Non-Repetitive Forward Surge Current (TC = 25, tp = 10 ms) 75 A
I2dt I2t value (TC = 25, tp = 10 ms) 28 As
Ptot (TC = 25) Power Dissipation 129 W
TJ,TSTG Operating Junction and Storage Temperature -55 to +175
RJC Thermal Resistance, Junction to Case, Typ. 1.16 /W
VF (IF=10A, TJ=25) Forward Voltage 1.4 - 1.6 V
IR (VR = 650 V, TJ= 25) Reverse Current - 0.05 - 5 A
C (VR = 0 V, f = 1MHz) Total Capacitance - 472 - pF
EC (VR = 400 V, TC = 25) Capacitance Stored Energy - 7.5 - J
Package TO220-2
Packing Method Tube
Quantity 50 units

2512111635_Bestirpower-BCH65S10D4_C53152687.pdf

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