Low loss N Channel MOSFET Bestirpower BMF65N120UC1 with super junction technology and fast switching
Key Attributes
Model Number:
BMF65N120UC1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
28A
RDS(on):
120mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
34W
Input Capacitance(Ciss):
2.38nF@50V
Gate Charge(Qg):
53nC
Mfr. Part #:
BMF65N120UC1
Package:
TO-220F
Product Description
Product Overview
The BMF65N120UC1 is a high-performance N-Channel Power MOSFET from Bestirpower, leveraging advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design contributes to significantly higher efficiency, making it ideal for applications requiring optimized charge coupling. Designers benefit from reduced EMI and low switching losses, enhancing overall system performance. Key features include an ultra-fast body diode and very high commutation ruggedness, with extremely low losses due to a low FOM (Rdson*Qg and Eoss).
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction
- Package: TO-220F
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC= 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage1) | 650 | V | |||
| VGSS | Gate to Source Voltage | ±30 | V | |||
| ID | Drain Current2) Continuous (TC = 25) | 28 | A | |||
| ID | Drain Current2) Continuous (TC = 100) | 16.5 | A | |||
| IDM | Drain Current Pulsed | 84 | A | |||
| Ptot | Power Dissipation | 34 | W | |||
| EAS | Single Pulsed Avalanche Energy3) | 506 | mJ | |||
| dv/dt | MOSFET dv/dt ruggedness | 50 | V/ns | |||
| Diode Recovery dv/dt ruggedness4) | 50 | |||||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Maximum Operating Junction Temperature | 150 | ||||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case, Max. | 3.67 | /W | |||
| RθJA | Thermal Resistance, Junction to Ambient, Max. *minimal footprint | 62.5 | /W | |||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS= 0 V, ID = 1mA | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V TJ=25°C | - | - | 1 µA | |
| IGSS | Gate-Source Leakage Current | VGS= ±30 V, VDS= 0 V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS= VDS, ID = 250µA | 3.0 | 3.8 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 13A TJ=25°C | - | 100 | 120 | mΩ |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=50V, f=250KHz | - | 2380 | - | pF |
| Coss | Output Capacitance | - | 89 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 4 | - | pF | |
| Co(er) | Energy Related Output Capacitance | VDS = 0V to 400V, VGS = 0V | - | 73 | - | pF |
| Qg | Total Gate Charge | VGS = 0-10V, VDD =400V, ID = 20A | - | 53 | - | nC |
| Qgs | Gate to Source Charge | - | 15 | - | nC | |
| Qgd | Gate to Drain “Miller” Charge | - | 18 | - | nC | |
| RG | Gate Resistance | VDD =0V, VGS = 0V, f = 1.0MHz | - | 4 | - | Ω |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGS = 10V, VDD = 400V, ID=20A | - | 15 | - | ns |
| tr | Turn-On Rise Time | - | 24 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 72 | - | ns | |
| tf | Turn-Off Fall Time | - | 6 | - | ns | |
| Reverse Diode Characteristics | ||||||
| ISD | Continuous Diode Forward Current | - | - | 28 | A | |
| VSD | Diode Forward Voltage | VGS = 0V, IF=13A, TJ= 25°C | - | 0.85 | - | V |
| trr | Reverse Recovery Time | VR=400V, IF=20A, diF/dt = 100A/µs | - | 160 | - | ns |
| Qrr | Reverse Recovery Charge | - | 1.03 | - | µC | |
| Irrm | Reverse Recovery Current | - | 12 | - | A | |
| Package Marking and Ordering Information | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | ||
| BMF65N120UC1 | BMF65N120UC1 650V 120mΩ PowerMOSFET | TO-220F | Tube | 50 units | ||
Applications
- AC/DC power supply
- PC Power
- Telecom/Server
- Solar inverter
1)Limited by Tj max. Maximum duty cycle D=0.75.
2)Pulse width tp limited by Tj,max.
3)VDD=50V, L=50mH, RG=25Ω, Starting TJ=25°C.
4)VDClink=400V; VDS,peak<V(BR)DSS; identical low side and high side switch with identical RG.
2504141434_Bestirpower-BMF65N120UC1_C47715871.pdf
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