ASDsemi ASDM40N100P T 40V N Channel MOSFET featuring low on resistance and synchronous rectification
Key Attributes
Model Number:
ASDM40N100P-T
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
100A
RDS(on):
4.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
162pF
Output Capacitance(Coss):
540pF
Pd - Power Dissipation:
65W
Input Capacitance(Ciss):
3.424nF
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
ASDM40N100P-T
Package:
TO-220
Product Description
Product Overview
The Ascend Semiconductor ASDM40N100P is a 40V N-Channel MOSFET designed for high-performance applications. It features low on-resistance and fast switching speeds, making it ideal for DC/DC converters, on-board server power, and synchronous rectification. This device is 100% avalanche tested and available in lead-free and green (RoHS compliant) options.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Line: Ascend
- Compliance: Lead Free and Green Devices Available (RoHS Compliant)
- Package Type: TO-220
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 40 | V | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Maximum Junction Temperature | TJ | 150 | C | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Continuous Drain Current@TC(VGS=10V) | ID | 100 | A | TC=25C |
| Continuous Drain Current@TC(VGS=10V) | ID | 51 | A | TC=100C |
| Continuous Drain Current@TA(VGS=10V) | ID | 25 | A | TA=25C |
| Continuous Drain Current@TA(VGS=10V) | ID | 19 | A | TA=70C |
| Maximum Power Dissipation@TC | PD | 65 | W | TC=25C |
| Maximum Power Dissipation@TC | PD | 26 | W | TC=100C |
| Maximum Power Dissipation@TA | PD | 4.2 | W | TA=25C |
| Maximum Power Dissipation@TA | PD | 2.7 | W | TA=70C |
| 300s Pulse Drain Current | IDP | 400 | A | TC=25C |
| Diode Continuous Forward Current | IS | 100 | A | Mounted on Large Heat Sink |
| Thermal Resistance-Junction to Case | RJC | 1.44 | C/W | |
| Thermal Resistance-Junction to Ambient | RJA | 62 | C/W | |
| Avalanche Energy, Single Pulsed | EAS | 121 | mJ | |
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, IDS=250A |
| Gate Threshold Voltage | VGS(th) | 1 - 2.5 | V | VDS=VGS, IDS=250A |
| Gate Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=40V, VGS=0V, TJ=125C |
| Drain-Source On-state Resistance | RDS(ON) | 4.0 - 6.0 | m | VGS=10V, IDS=50A |
| Drain-Source On-state Resistance | RDS(ON) | 4.5 - 4.6 | m | VGS=4.5V, IDS=35A |
| Diode Forward Voltage | VSD | 1.2 | V | IS=50A, VGS=0V |
| Reverse Recovery Time | trr | 18 | ns | ISD=50A, dlSD/dt=100A/s |
| Reverse Recovery Charge | Qrr | 29 | nC | ISD=50A, VGS=0V |
| Gate Resistance | RG | 1.3 | ||
| Input Capacitance | Ciss | 3424 | pF | VGS=0V, VDS=20V, Frequency=1.0MHz |
| Output Capacitance | Coss | 540 | pF | VGS=0V, VDS=20V, Frequency=1.0MHz |
| Reverse Transfer Capacitance | Crss | 162 | pF | VGS=0V, VDS=20V, Frequency=1.0MHz |
| Turn-on Delay Time | td(ON) | 13 | ns | VDD=20V,IDS=50A, VGEN=10V,RG=4.7 |
| Turn-on Rise Time | tr | 21 | ns | VDD=20V,IDS=50A, VGEN=10V,RG=4.7 |
| Turn-off Delay Time | td(OFF) | 29 | ns | VDD=20V,IDS=50A, VGEN=10V,RG=4.7 |
| Turn-off Fall Time | tf | 9 | ns | VDD=20V,IDS=50A, VGEN=10V,RG=4.7 |
| Total Gate Charge | Qg | 29 | nC | VDS=32V, VGS=10V, IDS=50A |
| Gate-Source Charge | Qgs | 5 | nC | VDS=32V, VGS=10V, IDS=50A |
| Gate-Drain Charge | Qgd | 9 | nC | VDS=32V, VGS=10V, IDS=50A |
| Model Number | ASDM40N100P | |||
| Marking | 40N100 | |||
| Packing Quantity | 50/Tube | Tube |
2410121617_ASDsemi-ASDM40N100P-T_C2972870.pdf
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