full bridge AC to DC conversion chip Bardeen Micro BDP8603 with low on resistance MOSFET technology
Key Attributes
Model Number:
BDP8603
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
-
Operating Junction Temperature Range:
-
Voltage - Forward(Vf@If):
-
Current - Rectified:
3A
Voltage - DC Reverse(Vr):
20V
Mfr. Part #:
BDP8603
Package:
SOT-23-6L
Product Description
Product Overview
The BDP8603 is a full-bridge AC-to-DC conversion chip. It integrates high-voltage power MOSFETs with low on-resistance. The NMOS channel features a typical on-resistance (RDS(ON)) of 50 m at VGS = 4.5V, while the PMOS channel has a typical on-resistance of 90 m at VGS = -4.5V. This chip is designed for flexible applications, including rectifier bridges and AC charging for handheld devices, offering a compact solution with its SOT-23-6L package.
Product Attributes
- Brand: BDM (Shenzhen Bardeen Microelectronics)
- Model: BDP8603
- Package: SOT-23-6L
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25C, unless otherwise specified) | ||||||
| Drain-Source Voltage (N-channel) | VDS | 20 | V | |||
| Drain-Source Voltage (P-channel) | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Current (N-channel, TA=25C) | ID | 3 | A | |||
| Continuous Current (P-channel, TA=25C) | ID | -2.2 | A | |||
| Pulsed Peak Current (N-channel) | IDM | 8 | A | |||
| Pulsed Peak Current (P-channel) | IDM | -7.2 | A | |||
| Power Dissipation (TA=25C) | PD | 1.4 | W | |||
| Power Dissipation (TA=75C) | PD | 0.9 | W | |||
| Storage Temperature Range | TJ , TSTG | -55 | 150 | |||
| Electrical Characteristics (TJ=25C, unless otherwise specified) | ||||||
| NMOS Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 20 | V | ||
| Drain Leakage Current | IDSS | VDS=20V, VGS=0V | 1 | A | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS=10V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.45 | 0.7 | 1.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=3A | 50 | 64 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=2.0A | 72 | 91 | m | |
| Dynamic Characteristics (NMOS) | ||||||
| Input Capacitance | CISS | VDS=10V ,VGS=0V f=1.0MHz | 580 | pF | ||
| Output Capacitance | COSS | 85 | pF | |||
| Reverse Transfer Capacitance | CRSS | 64 | pF | |||
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1.0MHz | 3.3 | 4.9 | ||
| PMOS Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -20 | V | ||
| Drain Leakage Current | IDSS | VDS=-20V, VGS=0V | -1 | A | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS=10V | 100 | nA | ||
| Turn-on Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.7 | -1.1 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-2.0A | 90 | 120 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V, ID=-1.0A | 115 | 160 | m | |
| Dynamic Characteristics (PMOS) | ||||||
| Input Capacitance | CISS | VDS=-10V ,VGS=0V f=1.0MHz | 561 | pF | ||
| Output Capacitance | COSS | 61 | pF | |||
| Reverse Transfer Capacitance | CRSS | 52 | pF | |||
| Ordering Information | ||||||
| Order Model | BDP8603 | |||||
| Storage Temperature | -55 | 150 | ||||
| Package Type | SOT-23-6L | |||||
| Specification | 3000pcs/Reel | |||||
Contact: 86-755-23505821 | Website: http://www.bdasic.com
Note: Shenzhen Bardeen Microelectronics (BDM) CO., LTD reserves the right to make corrections, modifications, enhancements, improvements, and other changes to its products and to discontinue any product without notice at any time. BDM cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a BDM product. No circuit patent licenses are implied.
2410121215_Bardeen-Micro--BDP8603_C20607215.pdf
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