Super junction mosfet Bestirpower BMW65N040UC1 engineered for switching and low EMI in power supply systems
Key Attributes
Model Number:
BMW65N040UC1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
80A
RDS(on):
40mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
500W
Input Capacitance(Ciss):
8.1nF@50V
Gate Charge(Qg):
133nC@10V
Mfr. Part #:
BMW65N040UC1
Package:
TO247-3
Product Description
Product Overview
The BMW65N040UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design facilitates significantly higher efficiency through optimized charge coupling technology, offering users advantages such as low EMI and reduced switching losses. Its robust construction ensures very high commutation ruggedness and is 100% UIS Tested. Ideal for demanding applications including PC power supplies, server power supplies, telecommunications, solar inverters, and automotive superchargers.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
Technical Specifications
| Model | Description | Key Features | Applications |
|---|---|---|---|
| BMW65N040UC1 | 650 V, 80 A, 40 m Super Junction Power MOSFET | Extremely low losses (low FOM Rdson*Qg and Eoss), Low EMI, Low switching loss, Very high commutation ruggedness, 100% UIS Tested | PC power, Server power supply, Telecom, Solar inverter, Super charger for automobiles |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TJ = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage(1) | 650 | V | |||
| VGSS | Gate to Source Voltage | 30 | V | |||
| ID | Drain Current(2) | VGS = 10 V, (TC = 25) | 80 | A | ||
| ID | Drain Current(2) | VGS = 10 V, (TC = 100) | 51 | A | ||
| IDM | Drain Current Pulsed | 240 | A | |||
| EAS | Single Pulsed Avalanche Energy(3) | 2025 | mJ | |||
| dv/dt | MOSFET dv/dt | 50 | V/ns | |||
| Peak Diode Recovery dv/dt | 50 | |||||
| PD | Power Dissipation (TC = 25) | 500 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| Is | Continuous diode forward current | 80 | A | |||
| Is | Pulse Diode pulse current(2) | 240 | A | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.25 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 62 | ||||
| Tsold | Soldering temperature, wavesoldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V, TJ=25C | 10 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| On Characteristics | ||||||
| V(GS)th | Gate Threshold Voltage | VGS = VDS , ID = 2 mA | 3.0 | 4.5 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID =40 A | 33 | 40 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0 V,VDS = 50 V, f = 100 KHz | 8100 | pF | ||
| Coss | Output Capacitance | 352 | pF | |||
| Co(tr) | Time Related Output Capacitance(2) | VDS = 0 V to 480 V, VGS = 0 V | 934 | pF | ||
| Co(er) | Energy Related Output Capacitance(1) | 200 | pF | |||
| Qg(tot) | Total Gate Charge at 10 V | VDD = 400 V, ID = 40 A, VGS =0 to 10 V | 133 | nC | ||
| Qgs | Gate to Source Charge | 33 | nC | |||
| Qgd | Gate to Drain Miller Charge | 39 | nC | |||
| RG | Gate Resistance | VDD= 0 V, VGS = 0 V, F = 1 MHz | 2.5 | |||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 40A, VGS = 10 V | 27 | ns | ||
| tr | Turn-On Rise Time | 8 | ns | |||
| td(off) | Turn-Off Delay Time | 151 | ns | |||
| tf | Turn-Off Fall Time | 5 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V,IF=40A TJ=25 | 0.9 | V | ||
| trr | Reverse Recovery Time | VR = 400 V, IF= 40 A, diF/dt = 150 A / s | 155 | ns | ||
| Qrr | Reverse Recovery Charge | 1.9 | C | |||
| Imm | Peak reverse recovery current | 22 | A | |||
| Crss | Reverse transfer capacitance | 10 | pF | |||
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BMW65N040UC1 | BMW65N040UC1 | TO247-3 | Tube | 30 units |
2508071805_Bestirpower-BMW65N040UC1_C50153972.pdf
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