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quality Power MOSFET BLP045N10 P N channel Enhanced type with low gate charge and high avalanche ruggedness factory
quality Power MOSFET BLP045N10 P N channel Enhanced type with low gate charge and high avalanche ruggedness factory

Power MOSFET BLP045N10 P N channel Enhanced type with low gate charge and high avalanche ruggedness

Key Attributes
Model Number: BLP045N10-P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
3.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
124pF
Output Capacitance(Coss):
955pF
Input Capacitance(Ciss):
6.95nF
Pd - Power Dissipation:
227.2W
Gate Charge(Qg):
102nC@10V
Mfr. Part #:
BLP045N10-P
Package:
TO-220
Product Description

Product Overview

The BLP045N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction loss, enhances switching performance, and improves avalanche energy. It is an ideal component for motor drivers and Battery Management Systems (BMS), offering fast switching, low on-resistance (RDS(on) 4.5m), low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. This product is RoHS compliant.

Product Attributes

  • Brand: Belling
  • Product Line: Power MOSFET
  • Technology: Advanced Double Trench
  • Certifications: RoHS compliant

Technical Specifications

Parameter Value Unit Details
Model BLP045N10
Type N-channel Enhanced Power MOSFET
Drain-Source Voltage (VDSS) 100 V
Continuous Drain Current (ID) 120 A Package Limited
On-Resistance (RDS(on).typ) 3.8 m @ VGS=10V, ID=50A
On-Resistance (RDS(on) Max) 4.5 m @ VGS=10V, ID=50A
Pulsed Drain Current (IDM) 480 A Note 1
Gate-Source Voltage (VGS) 20 V
Avalanche Energy (EAS) 306.2 mJ Note 2
Power Dissipation (PD) 227.2 W at TC=25C
Operating Junction Temperature (TJ) 150
Storage Temperature (Tstg) -55 to 150
Thermal Resistance (RJC) 0.55 /W Junction-Case
Thermal Resistance (RJA) 62.5 /W Junction-Ambient
Gate Threshold Voltage (VGS(th)) 2.0 - 4.0 V Typ: 3.0V
Input Capacitance (Ciss) 6950 pF Typ, @ VDS=50V, f=1MHz
Output Capacitance (Coss) 955 pF Typ, @ VDS=50V, f=1MHz
Reverse Transfer Capacitance (Crss) 124 pF Typ, @ VDS=50V, f=1MHz
Total Gate Charge (Qg) 102 nC Typ, @ VDD=50V, ID=50A, VGS=10V
Turn-On Delay Time (td(on)) 29 ns Typ
Rise Time (tr) 33 ns Typ
Turn-Off Delay Time (td(off)) 48 ns Typ
Fall Time (tf) 26 ns Typ
Diode Forward Voltage (VSD) 1.2 V Typ, @ IS=50A
Reverse Recovery Time (Trr) 80 ns Typ, @ Is=50A, di/dt=100A/us
Reverse Recovery Charge (Qrr) 189 nC Typ
Ordering Code BLP045N10-B Package: TO-263, Packing: Reel
Ordering Code BLP045N10-P Package: TO-220, Packing: Tube

Package Dimensions

TO-263
Item MIN MAX Unit
A 9.80 10.40 mm
B 8.90 9.50 mm
B1 0 0.10 mm
C 4.40 4.80 mm
D 1.16 1.37 mm
E 0.70 0.95 mm
F 0.30 0.60 mm
G 1.07 1.47 mm
H 1.30 1.80 mm
K 0.95 1.37 mm
L1 14.50 16.50 mm
L2 1.60 2.30 mm
I 0 0.2 mm
Q 0 8
R 0.4 0.4 mm
N 2.39 2.69 mm
TO-220
Item MIN MAX Unit
A 9.60 10.6 mm
B 15.0 16.0 mm
B1 8.90 9.50 mm
C 4.30 4.80 mm
C1 2.30 3.10 mm
D 1.20 1.40 mm
E 0.70 0.90 mm
F 0.30 0.60 mm
G 1.17 1.37 mm
H 2.70 3.80 mm
L 12.6 14.8 mm
N 2.34 2.74 mm
Q 2.40 3.00 mm
P 3.50 3.90 mm

2507251702_BL-BLP045N10-P_C48677264.pdf

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