Power MOSFET BL BLM04N06 B 60V 150A N Channel with low gate charge and high avalanche current rating

Key Attributes
Model Number: BLM04N06-B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
150A
RDS(on):
4.2mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
680pF
Number:
1 N-channel
Output Capacitance(Coss):
760pF
Input Capacitance(Ciss):
8.2nF
Pd - Power Dissipation:
600W
Gate Charge(Qg):
186nC@10V
Mfr. Part #:
BLM04N06-B
Package:
TO-263
Product Description

Product Overview

The Belling BLM04N06 is a 60V N-Channel Power MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. This green product is suitable for a wide variety of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key characteristics include a VDS of 60V, ID of 150A, and RDS(ON) < 4.2m at VGS=10V. It features a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability with high EAS. The package is designed for excellent heat dissipation, and the device is 100% UIS and DVDS tested.

Product Attributes

  • Brand: Belling
  • Product Type: N-Channel Power MOSFET
  • Color: Green Product

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID 150 A
Drain Current-Pulsed (Note 1) IDM 600 A
Maximum Power Dissipation (Tc=25) PD 210 W
Single pulse avalanche energy (Note 2) EAS 1000 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175
Thermal Characteristic
Thermal Resistance, Junction-to-Case RJC 0.7 /W
Electrical Characteristics (TA=25 unless otherwise noted)
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 A
Gate-Body Leakage Current IGSS VGS=20V,VDS=0V - - 100 nA
On Characteristics
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250A 2 3 4 V
Drain-Source On-State Resistance (Note 3) RDS(ON) VGS=10V, ID=50A - 3.5 4.2 m
Forward Transconductance gFS VDS=50V,ID=75A - 180 - S
Dynamic Characteristics
Input Capacitance Clss VDS=25V,VGS=0V, f=1.0MHz - 8200 - pF
Output Capacitance Coss - 760 - pF
Reverse Transfer Capacitance Crss - 680 - pF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) VDD=30V, ID=40A, VGS=10V,RGEN=3 - 27 - nS
Turn-on Rise Time tr - 25 - nS
Turn-Off Delay Time td(off) - 90 - nS
Turn-Off Fall Time tf - 40 - nS
Total Gate Charge Qg VDS=60V,ID=40A, VGS=10V - 186 - nC
Gate-Source Charge Qgs - 46 - nC
Gate-Drain Charge Qgd - 70 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage VSD VGS=0V,IS=150A - - 1.2 V
Package Marking And Ordering Information
Device Marking Ordering Codes Package Product Code Packing
M04N06 BLM04N06-P TO-220 BLM04N06 Tube
M04N06 BLM04N06-B TO-263 BLM04N06 Reel
TO-220 Package Dimensions (mm)
Items MIN MAX
A 9.60 10.6
B 15.0 16.0
B1 8.90 9.50
C 4.30 4.80
C1 2.30 3.10
D 1.20 1.40
E 0.70 0.90
F 0.30 0.60
G 1.17 1.37
H 2.70 3.80
L 12.6 14.8
N 2.34 2.74
Q 2.40 3.00
3.50 3.90
TO-263 Package Dimensions (mm)
Items MIN MAX
A 9.80 10.40
B 8.90 9.50
B1 0 0.10
C 4.40 4.80
D 1.16 1.37
E 0.70 0.95
F 0.30 0.60
G 1.07 1.47
H 1.30 1.80
K 0.95 1.37
L1 14.50 16.50
L2 1.60 2.30
I 0 0.2
Q 0 8
R 0.4
N 2.39 2.69

2201121300_BL-BLM04N06-B_C2924860.pdf
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