1200 Volt 34 Amp N Channel Silicon Carbide Power MOSFET Bestirpower BCBF120N80M1 for Power Conversion
Key Attributes
Model Number:
BCBF120N80M1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
80mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Input Capacitance(Ciss):
885pF
Output Capacitance(Coss):
65pF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
50nC
Mfr. Part #:
BCBF120N80M1
Package:
TO-263-7L
Product Description
Bestirpower BCBF120N80M1 N-Channel Silicon Carbide Power MOSFET
The Bestirpower BCBF120N80M1 is a 1200 V, 34 A, 80 m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. This MOSFET offers significant advantages including system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed with low gate charge and fast intrinsic diode with low reverse recovery. It also features robust avalanche capability and is 100% avalanche tested. The device is Pb-free, Halogen Free, and RoHS Compliant.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Channel Type: N-Channel
- Certifications: Pb-free, Halogen Free, RoHS Compliant
Applications
- Solar inverter
- EV charging station
- UPS
- Industrial power supply
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TJ = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage | 1200 | V | |||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current | VGS = 18 V,(TC = 25) | 34 | A | ||
| VGS = 18 V,(TC = 100) | 24 | A | ||||
| IDM | Drain Current Pulsed (Note1) | 80 | A | |||
| PD | Power Dissipation (TC = 25) | 150 | W | |||
| Derate Above 25 | 1.0 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | |
| VDS = 1200 V, VGS = 0 V, TJ = 175 | 5 | A | ||||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| VGS = -10 V, VDS = 0 V | -100 | nA | ||||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 5.0 mA (tested after VGS = 22 V, 1 ms pulse) | 2.0 | 3.0 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 15 A | 80 | 110 | m | |
| VGS = 18 V, ID = 15 A, TJ = 175 | 128 | m | ||||
| gfs | Transconductance | VDS = 20 V, ID = 15 A | 11.4 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 250 kHz | 880 | pF | ||
| Coss | Output Capacitance | 64 | pF | |||
| Crss | Reverse Capacitance | 5 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | 26 | J | ||
| Co(er) | Energy Related Output Capacitance | 80 | pF | |||
| Co(tr) | Time Related Output Capacitance | 142 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 15 A, VGS = -5 V / 18 V, Inductive load | 50 | nC | ||
| Qgs | Gate to Source Charge | 12 | nC | |||
| Qgd | Gate to Drain Miller Charge | 15 | nC | |||
| RG | Internal Gate Resistance | f = 1 MHz | 4.0 | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 800 V, ID = 15 A, VGS = -5 V / 18 V, RG = 2 , FWD : BCH120S010D1, Inductive load | 12 | ns | ||
| tr | Turn-On Rise Time | 10 | ns | |||
| td(off) | Turn-Off Delay Time | 24 | ns | |||
| tf | Turn-Off Fall Time | 9 | ns | |||
| Eon | Turn-on Switching Energy | 71 | J | |||
| Eoff | Turn-off Switching Energy | 41 | J | |||
| Etot | Total Switching Energy | 112 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | 30 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 80 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 15 A | 4.1 | V | ||
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 15 A, dIF/dt = 3000 A/s, Includes Qoss | 12 | ns | ||
| Qrr | Reverse Recovery Charge | 121 | nC | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 1 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
Package Outline: TO263-7L
Package Marking and Ordering Information:
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BCBF120N80M1 | BCBF120N80M1 | TO263-7L | Tape & Reel | 800 units |
2512291153_Bestirpower-BCBF120N80M1_C51346560.pdf
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