650 Volt 35 Amp N Channel Power MOSFET Bestirpower BMW65N100UC1 Featuring Ultra Fast Body Diode Technology
Key Attributes
Model Number:
BMW65N100UC1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
35A
RDS(on):
100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@1000uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.8pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
278W
Input Capacitance(Ciss):
2.99nF@50V
Gate Charge(Qg):
66nC
Mfr. Part #:
BMW65N100UC1
Package:
TO-247-3
Product Description
Product Overview
The BMW65N100UC1 is a 650 V, 35 A N-Channel Power MOSFET from Bestirpower, leveraging advanced super junction technology for exceptionally low on-resistance and gate charge. This design optimizes charge coupling for significantly higher efficiency, offering designers the advantage of low EMI and reduced switching losses. Its ultra-fast body diode and extremely low FOM (Rdson*Qg and Eoss) contribute to very low losses, while its high commutation ruggedness makes it suitable for demanding applications.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Package: TO247-3
- Diode Type: Ultra-fast body diode
Technical Specifications
| Feature | Value | Unit |
|---|---|---|
| Part Number | BMW65N100UC1 | |
| Type | N-Channel Power MOSFET | |
| Drain to Source Voltage (BVDSS@TJ,max) | 700 | V |
| Continuous Drain Current (ID @ TC=25) | 35 | A |
| Continuous Drain Current (ID @ TC=100) | 22 | A |
| Static Drain to Source On Resistance (RDS(on),max @ VGS=10V, ID=18A, TJ=25) | 100 | m |
| Total Gate Charge (Qg,typ @ VDD=400V, ID=18A, VGS=0 to 10V) | 66 | nC |
| Drain to Source Breakdown Voltage (BVDSS) | 650 | V |
| Gate to Source Voltage (VGSS) | 30 | V |
| Drain Current Pulsed (IDM) | 105 | A |
| Single Pulsed Avalanche Energy (EAS) | 750 | mJ |
| MOSFET dv/dt ruggedness | 50 | V/ns |
| Peak Diode Recovery dv/dt | 50 | V/ns |
| Power Dissipation (PD @ TC=25) | 278 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | |
| Continuous Diode Forward Current (Is) | 35 | A |
| Pulse Diode Pulse Current (Is Pulse) | 105 | A |
| Thermal Resistance, Junction to Case (RJC, Max.) | 0.45 | /W |
| Thermal Resistance, Junction to Ambient (RJA, Max.) | 62 | /W |
| Soldering Temperature (Tsold, wavesoldering at leads) | 260 | |
| Zero Gate Voltage Drain Current (IDSS @ VDS=650V, VGS=0V) | 10 | A |
| Gate-Source Leakage Current (IGSS @ VGS=30V, VDS=0V) | 100 | nA |
| Gate Threshold Voltage (VGS(th) @ VGS=VDS, ID=1mA) | 3.5 - 4.5 | V |
| Static Drain to Source On Resistance (RDS(on) @ VGS=10V, ID=18A, TJ=25) | 82 - 100 | m |
| Input Capacitance (Ciss @ VGS=0V, VDS=50V, f=250KHz) | 2990 | pF |
| Output Capacitance (Coss @ VGS=0V, VDS=50V, f=250KHz) | 141 | pF |
| Time Related Output Capacitance (Co(tr) @ VDS=0 to 400V, VGS=0V) | 452 | pF |
| Energy Related Output Capacitance (Co(er) @ VDS=0 to 400V, VGS=0V) | 88 | pF |
| Reverse transfer capacitance (Crss @ VGS=0V, VDS=50V, f=250KHz) | 5.8 | pF |
| Gate to Source Charge (Qgs) | 20 | nC |
| Gate to Drain Miller Charge (Qgd) | 25 | nC |
| Gate Resistance (RG @ f=1MHz) | 2.7 | |
| Turn-On Delay Time (td(on) @ VDD=400V, ID=18A, VGS=10V) | 21 | ns |
| Turn-On Rise Time (tr @ VDD=400V, ID=18A, VGS=10V) | 19 | ns |
| Turn-Off Delay Time (td(off) @ VDD=400V, ID=18A, VGS=10V) | 76 | ns |
| Turn-Off Fall Time (tf @ VDD=400V, ID=18A, VGS=10V) | 8 | ns |
| Diode Forward Voltage (VSD @ IF=18A, TJ=25) | 0.88 | V |
| Reverse Recovery Time (trr @ VR=400V, IF=18A, diF/dt=100A/s) | 140 | ns |
| Reverse Recovery Charge (Qrr @ VR=400V, IF=18A, diF/dt=100A/s) | 1.15 | C |
| Peak Reverse Recovery Current (Imm) | 15 | A |
| Package Marking | BMW65N100UC1 | |
| Packing Method | Tube | |
| Quantity per Package | 30 | units |
Applications
- AC/DC power supply
- PC power
- Telecom/Server
- Solar inverter
2504161749_Bestirpower-BMW65N100UC1_C47994747.pdf
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