Power MOSFET BL BLP05N08G B Featuring Fast Switching and Low Gate Charge for High Speed Motor Control
Key Attributes
Model Number:
BLP05N08G-B
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
120A
RDS(on):
5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Pd - Power Dissipation:
173.6W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
BLP05N08G-B
Package:
TO-263
Product Description
Product Overview
The BLP05N08G is an N-channel Enhanced Power MOSFET manufactured using advanced double trench technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is ideally suited for demanding applications such as motor drivers and high-speed switching circuits. Key features include fast switching, low on-resistance (RDS(on) 5m), low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. The product is RoHS compliant.
Product Attributes
- Brand: Belling
- Origin: China (implied by .cn domain and company contact details)
- Certifications: RoHS
Technical Specifications
| Category | Parameter | Value | Unit | Conditions |
|---|---|---|---|---|
| Key Characteristics | VDSS | 85 | V | |
| ID | 120 | A | ||
| RDS(on) typ | 4.4 | m | ||
| Absolute Ratings | VDSS | 85 | V | TC=25C |
| ID (Silicon Limited) | 138 | A | TC=25C | |
| ID (Package Limited) | 120 | A | TC=25C | |
| ID @TC=100C (Silicon Limited) | 87.4 | A | ||
| IDM (Pulsed Drain Current) | 480 | A | Note1 | |
| VGS | 20 | V | ||
| EAS (Avalanche Energy) | 156 | mJ | Note2 | |
| PD (Power Dissipation) | 173.6 | W | ||
| Derating Factor above 25C | 1.39 | W/ | ||
| TJ, Tstg (Operating & Storage Temp) | -55 to 150 | |||
| Thermal Characteristics | RJC (Junction-Case) | 0.72 | /W | |
| RJA (Junction-Ambient) | 62.5 | /W | ||
| Electrical Characteristics (OFF) | VDSS (Drain-Source Breakdown Voltage) | 85 | V | VGS=0V, ID=250A |
| IDSS (Drain-Source Leakage Current) | 1 | A | VDS=85V, VGS=0V | |
| IDSS @TC=125C | 100 | A | VDS=68V, VGS=0V | |
| IGSS(F) (Gate-Source Forward Leakage) | 100 | nA | VGS=+20V | |
| IGSS(R) (Gate-Source Reverse Leakage) | -100 | nA | VGS=-20V | |
| Electrical Characteristics (ON) | RDS(on) (Drain-Source On-Resistance) | 4.4 (Typ), 5 (Max) | m | VGS=10V, ID=50A |
| VGS(th) (Gate Threshold Voltage) | 2.0 (Min), 3.0 (Typ), 4.0 (Max) | V | VDS=VGS, ID=250A | |
| RDS(on) | 5 | m | ||
| Dynamic Characteristics | Ciss (Input Capacitance) | 4021 | pF | VDS=40V, VGS=0, f=1MHz |
| Coss (Output Capacitance) | 637 | pF | ||
| Crss (Reverse Transfer Capacitance) | 17 | pF | ||
| Qg (Total Gate Charge) | 80 | nC | VDD=40V, ID=50A, VGS=10V | |
| Switching Characteristics | td(on) (Turn-On Delay Time) | 22 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load |
| tr (Rise Time) | 42 | ns | ||
| td(off) (Turn-Off Delay Time) | 48 | ns | ||
| tf (Fall Time) | 25 | ns | ||
| Source-Drain Diode Characteristics | IS (Continuous Source Current) | 120 | A | |
| ISM (Maximum Pulsed Current) | 480 | A | ||
| VSD (Diode Forward Voltage) | 1.2 | V | VGS=0V, IS=50A | |
| Trr (Reverse Recovery Time) | 60 | ns | Is=20A, di/dt=100A/us | |
| Qrr (Reverse Recovery Charge) | 136 | uC | ||
| Ordering Information | Ordering Code | BLP05N08G-B | TO-263 Package, Reel Packing | |
| Ordering Code | BLP05N08G-P | TO-220 Package, Tube Packing | ||
| Package Dimensions (TO-263) | A | 9.80 - 10.40 | mm | |
| B | 8.90 - 9.50 | mm | ||
| Package Dimensions (TO-220) | A | 9.60 - 10.6 | mm | |
| B | 15.0 - 16.0 | mm |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: L=0.5mH, Ias=25A, Start TJ =25.
Applications: Switching applications, Motor drivers.
Features: Fast Switching, Low On-Resistance (RDS(on)5m), Low Gate Charge, Low Reverse transfer capacitances, High avalanche ruggedness.
2410121258_BL-BLP05N08G-B_C2924856.pdf
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