N Channel Silicon Carbide MOSFET Bestirpower BCW120N40M2 with Low Reverse Recovery and High Frequency
Key Attributes
Model Number:
BCW120N40M2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
66.5A
Operating Temperature -:
-55℃~+175℃
RDS(on):
40mΩ
Gate Threshold Voltage (Vgs(th)):
2.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Pd - Power Dissipation:
300W
Input Capacitance(Ciss):
2.5nF
Output Capacitance(Coss):
95pF
Gate Charge(Qg):
122nC
Mfr. Part #:
BCW120N40M2
Package:
TO-247
Product Description
Product Overview
The Bestirpower BCW120N40M2 is an N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It features high switching speed with low gate charge and a fast intrinsic diode with low reverse recovery, contributing to system efficiency improvement and higher frequency applicability. Its robust avalanche capability, 100% avalanche tested, and compliance with Halogen Free and RoHS standards make it suitable for demanding applications such as solar inverters, ESS, UPS, EV charging stations, server & telecom power, and industrial power supplies. This MOSFET offers increased power density and reduced cooling effort.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Channel Type: N-Channel
- Certifications: Halogen Free, RoHS Compliant
- Package Type: TO247-3L
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage | (TJ = 25 unless otherwise noted) | 1200 | V | ||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current VGS = 18 V (TC = 25) | 65.5 | A | |||
| ID | Drain Current VGS = 18 V (TC = 100) | 46.3 | A | |||
| IDM | Drain Current Pulsed (Note 1) | 211 | A | |||
| PD | Power Dissipation (TC = 25) | 300 | W | |||
| Derate Above 25 | 2 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.5 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 25.24 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ= 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | - | 1 | 10 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V, TJ = 175 | - | - | 100 | A |
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | - | - | +200 | nA |
| IGSS | Gate-Source Leakage Current | VGS = -10 V, VDS = 0 V | - | - | -200 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 10 mA | 2 | 2.6 | 3.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 30 A | - | 40 | 50 | m |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 30 A, TJ = 175 | - | 70 | - | m |
| gfs | Transconductance | VDS = 20 V, ID = 30 A | - | 15.4 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 1 MHz | - | 2500 | - | pF |
| Coss | Output Capacitance | - | 95 | - | pF | |
| Crss | Reverse Capacitance | - | 5 | - | pF | |
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | - | 82 | - | J |
| Co(er) | Energy Related Output Capacitance | - | 256 | - | pF | |
| Co(tr) | Time Related Output Capacitance | - | 250 | - | pF | |
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V, Inductive load | - | 122 | - | nC |
| Qgs | Gate to Source Charge | - | 29 | - | nC | |
| Qgd | Gate to Drain Miller Charge | - | 23 | - | nC | |
| RG | Internal Gate Resistance | f = 1MHz, VAC=25mV open drain | - | 3.1 | - | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V, RG = 3.3, FWD : body diode at VGS=-5V, Inductive load | - | 12.3 | - | ns |
| tr | Turn-On Rise Time | - | 22.74 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 20.47 | - | ns | |
| tf | Turn-Off Fall Time | - | 8.13 | - | ns | |
| Eon | Turn-on Switching Energy | - | 401.8 | - | uJ | |
| Eoff | Turn-off Switching Energy | - | 41.7 | - | uJ | |
| Etot | Total Switching Energy | - | 442.5 | - | uJ | |
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | - | - | 65.5 | A | |
| ISM | Maximum Pulsed Diode Forward Current | - | - | 211 | A | |
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 30 A | - | 4.7 | - | V |
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s, Includes QOSS | - | 11.4 | - | ns |
| Qrr | Reverse Recovery Charge | - | 57 | - | nC | |
| Irrm | Peak Reverse Recovery Current | - | 10 | - | A | |
2509021810_Bestirpower-BCW120N40M2_C51346558.pdf
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