1200 Volt 72 Amp N Channel Silicon Carbide Power MOSFET Bestirpower BCZ120N35M2 for Power Conversion

Bestirpower BCZ120N35M2 N-Channel Silicon Carbide Power MOSFET

Product Overview

The Bestirpower BCZ120N35M2 is a 1200 V, 72 A N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It features high switching speed with low gate charge, a fast intrinsic diode with low reverse recovery, and robust avalanche capability, all of which contribute to system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort. This MOSFET is ideal for solar inverters, ESS, UPS, EV charging stations, server & telecom power supplies, and industrial power supplies.

Product Attributes

• Brand: Bestirpower
• Material: Silicon Carbide
• Certifications: Halogen Free, RoHS Compliant
• Package Type: TO247-4L

Technical Specifications

Parameter	Value	Unit
Model	BCZ120N35M2
Type	N-Channel Silicon Carbide Power MOSFET
Drain to Source Voltage (VDSS)	1200	V
Gate to Source Voltage (VGS) (DC)	-10 / +22	V
Recommended Operation Gate to Source Voltage (VGSop)	-5 / +18	V
Drain Current (ID) (VGS = 18 V, TC = 25)	72	A
Drain Current (ID) (VGS = 18 V, TC = 100)	51	A
Drain Current Pulsed (IDM)	232	A
Power Dissipation (PD) (TC = 25)	300	W
Derate Above 25	2	W/
Operating and Storage Temperature Range (TJ, TSTG)	-55 to 175
Thermal Resistance, Junction to Case (RJC) Max.	0.5	/W
Thermal Resistance, Junction to Ambient (RJA) Max.	25.24	/W
Soldering temperature (Tsold)	260
Drain to Source Breakdown Voltage (BVDSS)	1200	V
Static Drain to Source On Resistance (RDS(on)) Typ. (VGS = 18 V, ID = 30 A)	35	m
Total Gate Charge (Qg(tot)) Typ.	122	nC
Maximum Continuous Diode Forward Current (IS)	72	A
Maximum Pulsed Diode Forward Current (ISM)	232	A
Reverse Recovery Time (trr) (TC = 25 )	11.4	ns
Reverse Recovery Charge (Qrr) (TC = 25 )	57	nC
Reverse Recovery Time (trr) (TC = 175 )	33.4	ns
Reverse Recovery Charge (Qrr) (TC = 175 )	505	nC

2601061650_Bestirpower-BCZ120N35M2_C53152695.pdf