Silicon N channel Enhanced MOSFET BL BL18N20 designed for high speed switching and power electronics
Key Attributes
Model Number:
BL18N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
RDS(on):
180mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
130pF
Output Capacitance(Coss):
450pF
Input Capacitance(Ciss):
1.32nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
BL18N20
Package:
TO-252
Product Description
Product Overview
The BL18N20 is a silicon N-channel Enhanced MOSFET designed for high-frequency switching applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy capabilities. This transistor is well-suited for use in Switched-Mode Power Supplies (SMPS), high-speed switching circuits, and general-purpose applications. Its key features include fast switching, low Crss, 100% avalanche testing, and improved dv/dt capability, making it a reliable component for demanding electronic designs.
Product Attributes
- Brand: Belling
- Product Type: Power MOSFET
- Channel Type: N-channel
- Technology: Enhanced MOSFET
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Drain-to-Source Voltage (VDS) | 200 | V | |
| Continuous Drain Current (ID) | 18 | A | at TC = 25C |
| Continuous Drain Current (ID) | 11 | A | at TC = 100C |
| Pulsed Drain Current (IDM) | 72 | A | Note 1 |
| Gate-to-Source Voltage (VGS) | ±30 | V | |
| Single Pulse Avalanche Energy (EAS) | 580 | mJ | Note 2 |
| Peak Diode Recovery dv/dt | 5.0 | V/ns | Note 3 |
| Power Dissipation (PD) | 130 | W | TO-220, TO-251, TO-252 |
| Derating Factor above 25C | 1.2 | W/ | TO-220, TO-251, TO-252 |
| Power Dissipation (PD) | 42 | W | TO-220F |
| Derating Factor above 25C | 0.33 | W/ | TO-220F |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | -55 to 150 | ||
| Maximum Temperature for Soldering (TL) | 300 | ||
| Junction-to-Case Thermal Resistance (RJC) | 0.84 | /W | No FullPAK (TO-220/TO-251/TO-252) |
| Junction-to-Ambient Thermal Resistance (RJA) | 62.5 | /W | No FullPAK (TO-220/TO-251/TO-252) |
| Junction-to-Case Thermal Resistance (RJC) | 3.0 | /W | FullPAK (TO-220F) |
| Junction-to-Ambient Thermal Resistance (RJA) | 62.5 | /W | FullPAK (TO-220F) |
| Drain to Source Breakdown Voltage (VDSs) | 200 | V | VGS=0V, ID=250A |
| Drain to Source Leakage Current (IDSS) | 1 | A | VDS =200V, VGS= 0V, Tj = 25C |
| Drain to Source Leakage Current (IDSS) | 100 | A | VDS =160V, VGS= 0V, Tj = 125C |
| Gate to Source Forward Leakage (IGSS(F)) | 100 | nA | VGS =+30V |
| Gate to Source Reverse Leakage (IGSS(R)) | -100 | nA | VGS =-30V |
| Drain-to-Source On-Resistance (RDS(ON)) | 0.13 | VGS=10V, ID=7.5A (Typ.) | |
| Drain-to-Source On-Resistance (RDS(ON)) | 0.18 | VGS=10V, ID=7.5A (Max.) | |
| Gate Threshold Voltage (VGS(TH)) | 2.0 - 4.0 | V | VDS = VGS, ID = 250A |
| Forward Transconductance (gfs) | 12 | S | VDS=15V, ID =9A (Typ.) |
| Gate Resistance (Rg) | 2 | f = 1.0MHz (Typ.) | |
| Input Capacitance (Ciss) | 1320 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz (Typ.) |
| Output Capacitance (Coss) | 450 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz (Typ.) |
| Reverse Transfer Capacitance (Crss) | 130 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz (Typ.) |
| Turn-on Delay Time (td(ON)) | 15 | ns | ID =18A, VDD = 100V, VGS = 10V, RG =20 (Typ.) |
| Rise Time (Tr) | 52 | ns | ID =18A, VDD = 100V, VGS = 10V, RG =20 (Typ.) |
| Turn-Off Delay Time (td(OFF)) | 46 | ns | ID =18A, VDD = 100V, VGS = 10V, RG =20 (Typ.) |
| Fall Time (tf) | 37 | ns | ID =18A, VDD = 100V, VGS = 10V, RG =20 (Typ.) |
| Total Gate Charge (Qg) | 23 | nC | ID =18A, VDD =160V, VGS = 10V (Typ.) |
| Gate to Source Charge (Qgs) | 8 | nC | ID =18A, VDD =160V, VGS = 10V (Typ.) |
| Gate to Drain (Miller) Charge (Qgd) | 6 | nC | ID =18A, VDD =160V, VGS = 10V (Typ.) |
| Continuous Source Current (IS) (Body Diode) | 18 | A | TC=25 C |
| Maximum Pulsed Current (ISM) (Body Diode) | 72 | A | |
| Diode Forward Voltage (VSD) | 1.2 | V | IS=18A, VGS=0V (Max.) |
| Reverse Recovery Time (Trr) | 350 | ns | IS=18A, Tj = 25C, dIF/dt=100A/us (Typ.) |
| Reverse Recovery Charge (Qrr) | 3600 | nC | IS=18A, Tj = 25C, dIF/dt=100A/us (Typ.) |
Ordering Information
| Ordering Code | Package | Product Code | Packing |
|---|---|---|---|
| BL18N20-P | TO-220 | 18N20 | Tube |
| BL18N20-A | TO-220F | 18N20 | Tube |
| BL18N20-U | TO-251 | 18N20 | Tube |
| BL18N20-D | TO-252 | 18N20 | Tape Reel |
Package Dimensions
TO-220F
| Items | Values (mm) MIN | Values (mm) MAX |
|---|---|---|
| A | 9.60 | 10.4 |
| B | 15.4 | 16.2 |
| B1 | 8.90 | 9.50 |
| C | 4.30 | 4.90 |
| C1 | 2.10 | 3.00 |
| D | 2.40 | 3.00 |
| E | 0.60 | 1.00 |
| F | 0.30 | 0.60 |
| G | 1.12 | 1.42 |
| H | 3.40 | 3.80 |
| I | 1.60 | 2.90 |
| L | 12.0 | 14.0 |
| N | 2.34 | 2.74 |
| Q | 3.15 | 3.55 |
| R | 2.90 | 3.30 |
TO-220
| Items | Values (mm) MIN | Values (mm) MAX |
|---|---|---|
| A | 9.60 | 10.6 |
| B | 15.0 | 16.0 |
| B1 | 8.90 | 9.50 |
| C | 4.30 | 4.80 |
| C1 | 2.30 | 3.10 |
| D | 1.20 | 1.40 |
| E | 0.70 | 0.90 |
| F | 0.30 | 0.60 |
| G | 1.17 | 1.37 |
| H | 2.70 | 3.80 |
| L | 12.6 | 14.8 |
| N | 2.34 | 2.74 |
| Q | 2.40 | 3.00 |
| R | 3.50 | 3.90 |
TO-251
| Items | Values (mm) MIN | Values (mm) MAX |
|---|---|---|
| A | 6.30 | 6.90 |
| B | 5.70 | 6.30 |
| B1 | 1.00 | 1.20 |
| B2 | 6.80 | 7.40 |
| C | 2.10 | 2.50 |
| D | 0.30 | 0.60 |
| E | 0.50 | 0.70 |
| F | 0.30 | 0.60 |
| G | 0.70 | 1.00 |
| H | 1.60 | 2.40 |
| L* | 3.9 | 4.3 |
| M | 5.10 | 5.50 |
| N | 2.09 | 2.49 |
TO-252
| Items | Values (mm) MIN | Values (mm) MAX |
|---|---|---|
| A | 6.30 | 6.90 |
| A1 | 0 | 0.13 |
| B | 5.70 | 6.30 |
| C | 2.10 | 2.50 |
| D | 0.30 | 0.60 |
| E1 | 0.60 | 0.90 |
| E2 | 0.70 | 1.00 |
| F | 0.30 | 0.60 |
| G | 0.70 | 1.20 |
| L1 | 9.60 | 10.50 |
| L2 | 2.70 | 3.10 |
| H | 0.60 | 1.00 |
| M | 5.10 | 5.50 |
| N | 2.09 | 2.49 |
| R | 0.3 | |
| T | 1.40 | 1.60 |
| Y | 5.10 | 6.30 |
2409271633_BL-BL18N20_C3036705.pdf
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