power mosfet Bestirpower BCZ65N45M1 silicon carbide 650 volt 45 milliohm for industrial and telecom power
Key Attributes
Model Number:
BCZ65N45M1
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
42A
Operating Temperature -:
-55℃~+175℃
RDS(on):
45mΩ
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.1pF
Input Capacitance(Ciss):
1.048nF
Output Capacitance(Coss):
131pF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
56nC
Mfr. Part #:
BCZ65N45M1
Package:
TO-247-4L
Product Description
Product Overview
The BCZ65N45M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. Featuring a 650V breakdown voltage and a low on-resistance of 45 m, this MOSFET offers significant advantages including improved system efficiency, higher frequency operation, increased power density, and reduced cooling requirements. Its robust design includes a fast intrinsic diode with low reverse recovery and a strong avalanche capability, making it ideal for solar inverters, ESS, UPS systems, EV charging stations, server and telecom power supplies, and industrial power supplies.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Certifications: Halogen Free, RoHS Compliant
- Package Type: TO-247-4L
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage | 650 | V | |||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current Continuous (TC = 25) | 42 | A | |||
| ID | Drain Current Continuous (TC = 100) | 30 | A | |||
| IDM | Drain Current Pulsed (Note1) | 117 | A | |||
| PD | Power Dissipation (TC = 25) | 150 | W | |||
| Derate Above 25 | 1.0 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| Electrical Characteristics (TC = 25 unless otherwise noted) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V | 1 | 100 | A | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V, TJ = 175 | 10 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| IGSS | Gate-Source Leakage Current | VGS = -10 V, VDS = 0 V | -100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 7 mA | 1.8 | 2.8 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 20 A | 45 | 63 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 20 A, TJ = 175 | 59 | m | ||
| gfs | Transconductance | VDS = 20 V, ID = 20 A | 13.4 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 400 V, VGS = 0V, f = 1 MHz | 1048 | pF | ||
| Coss | Output Capacitance | 131 | pF | |||
| Crss | Reverse Capacitance | 9.1 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 400 V, VGS = 0 V | 13.0 | J | ||
| Co(er) | Energy Related Output Capacitance | 162.0 | pF | |||
| Co(tr) | Time Related Output Capacitance | 236 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, Inductive load | 56 | nC | ||
| Qgs | Gate to Source Charge | 14 | nC | |||
| Qgd | Gate to Drain Miller Charge | 15 | nC | |||
| RG | Internal Gate Resistance | f = 1MHz, VAC=30mV | 4.0 | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 2 , FWD : BCH65S012D1, Inductive load | 13 | ns | ||
| tr | Turn-On Rise Time | 10 | ns | |||
| td(off) | Turn-Off Delay Time | 26 | ns | |||
| tf | Turn-Off Fall Time | 5 | ns | |||
| Eon | Turn-on Switching Energy | 27 | J | |||
| Eoff | Turn-off Switching Energy | 18 | J | |||
| Etot | Total Switching Energy | 45 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | 42 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 117 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 20 A | 4.2 | V | ||
| trr | Reverse Recovery Time | VDD = 400 V, ISD = 20 A, dIF/dt = 1000 A/s, Includes QOSS | 17 | ns | ||
| Qrr | Reverse Recovery Charge | 104 | nC | |||
| IRRM | Peak Reverse Recovery Current | 10 | A | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 1.0 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
Package Dimensions
| SYMBOL | MIN | NOM | MAX | UNIT |
|---|---|---|---|---|
| A | 4.80 | 5.00 | 5.20 | mm |
| A1 | 2.21 | 2.41 | 2.61 | mm |
| A2 | 1.80 | 2.00 | 2.20 | mm |
| b | 1.06 | 1.21 | 1.36 | mm |
| b1 | 2.33 | 2.63 | 2.93 | mm |
| b3 | 1.07 | 1.30 | 1.60 | mm |
| c | 0.51 | 0.61 | 0.75 | mm |
| D | 23.30 | 23.45 | 23.60 | mm |
| D1 | 16.25 | 16.55 | 16.85 | mm |
| E | 15.74 | 15.94 | 16.14 | mm |
| E1 | 13.72 | 14.02 | 14.32 | mm |
| T1 | 2.35 | 2.50 | 2.65 | mm |
| e | 2.54 | BSC | ||
| e1 | 5.08 | BSC | ||
| Q | 5.49 | 5.79 | 6.09 | mm |
| L | 17.27 | 17.57 | 17.87 | mm |
| L1 | 3.99 | 4.19 | 4.39 | mm |
| p | 3.40 | 3.60 | 3.80 | mm |
| p1 | 7.19 | REF |
Ordering Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BCZ65N45M1 | BCZ65N45M1 | TO-247-4L | Tube | 30 units |
2504141434_Bestirpower-BCZ65N45M1_C47715866.pdf
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