650V 50A Trench FS IGBT Bestirpower BKW65N050HS1 for power supply and welding converter applications
Key Attributes
Model Number:
BKW65N050HS1
Product Custom Attributes
Pd - Power Dissipation:
403W
Td(off):
155.4ns
Td(on):
20.5ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
4.146uF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@500uA
Gate Charge(Qg):
135nC@50A,15V
Reverse Recovery Time(trr):
73.8ns
Switching Energy(Eoff):
750uJ
Turn-On Energy (Eon):
1.3mJ
Mfr. Part #:
BKW65N050HS1
Package:
TO247-3L
Product Description
Bestirpower BKW65N050HS1: 650V 50A Trench FS IGBT for High-Efficiency Applications
The Bestirpower BKW65N050HS1 is a high-performance Trench FS IGBT featuring advanced Bestirpower technology designed for exceptional efficiency. Its optimized gate charge management significantly reduces switching losses and electromagnetic interference (EMI), making it ideal for designers seeking user-friendly solutions. This IGBT is particularly well-suited for demanding applications such as resonant converters, uninterruptible power supplies (UPS), and welding converters.
Key Features:
- Maximum junction temperature TJ max = 175C
- Low saturation voltage VCEsat = 1.4 V at TJ = 25C
- Positive temperature coefficient for VCEsat, enabling parallel applications
Applications:
- Resonant converters
- Uninterruptible power supplies
- Welding converters
Technical Specifications:
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit | Note |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| VCE | Collector-emitter voltage | (TJ 25 ) | - | - | 650 | V | |
| VGE | Gate-emitter voltage | - | - | 20 | V | ||
| IC | DC collector current, limited by TJ max | TC = 25 | - | - | 80 | A | |
| IC | DC collector current, limited by TJ max | TC = 100 | - | - | 50 | A | |
| IC,pulse | Pulsed collector current, tp limited by TJ max | - | - | 200 | A | ||
| IF | Diode forward current, limited by TJ max | TC = 25 | - | - | 80 | A | |
| IF | Diode forward current, limited by TJ max | TC = 100 | - | - | 50 | A | |
| IF,pulse | Diode pulsed current, tp limited by TJ max | - | - | 200 | A | ||
| Ptot | Power Dissipation | TC = 25 | - | - | 403 | W | Fig.8 |
| Ptot | Power Dissipation | TC = 100 | - | - | 161 | W | |
| TJ | Junction temperature range | -40 | ~ | 175 | |||
| TSTG | Storage temperature range | -40 | ~ | 150 | |||
| Thermal Resistance | |||||||
| RthJC | IGBT thermal resistance, junction-case | - | - | 0.35 | /W | ||
| RthJC | Diode thermal resistance, junction-case | - | - | 1.57 | /W | ||
| RthJA | Thermal resistance, junction-to-ambient | - | - | 31.42 | /W | ||
| Tsold | Soldering temperature | wave soldering only allowed at leads | - | - | 260 | ||
| Electrical Characteristics (TJ= 25 unless otherwise noted) | |||||||
| V(BR)CES | Collector-emitter Breakdown Voltage | VGE=0V, IC=200A | 650 | - | - | V | |
| ICES | Collector Cut-off Current | VCE=650V, VGS=0V | - | - | 50 | A | |
| IGES | Gate-emitter Leakage Current | VGE=20V, VGE=0V | - | - | 100 | nA | |
| VGE(TH) | Gate Threshold Voltage | VCE=VGE, IC=500A | 3.2 | 4.0 | 4.8 | V | Fig.5 |
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE=15V, IC=50A, TJ=25 | - | 1.4 | 1.75 | V | Fig.4 |
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE=15V, IC=50A, TJ=150 | - | 1.8 | - | V | Fig.4 |
| Dynamic Characteristics | |||||||
| Cies | Input Capacitance | VCE=25V, VGE=0V, f=1MHz | - | 4146 | - | pF | Fig.6 |
| Coes | Output Capacitance | - | 166 | - | pF | ||
| Cres | Reverse Transfer Capacitance | - | 9.7 | - | pF | ||
| Switching Parameters | |||||||
| td(on) | Turn-on Delay Time | VCE=400V, IDC=50A, RG=8, VGE=0/+15V, TJ=25 | - | 20.5 | - | ns | Fig.23 |
| td(on) | Turn-on Delay Time | VCE=400V, IDC=50A, RG=8, VGE=0/+15V, TJ=150 | - | 20 | - | ns | Fig.23 |
| tr | Rise Time | TJ=25 | - | 29.8 | - | ns | Fig.23 |
| tr | Rise Time | TJ=150 | - | 31 | - | ns | Fig.23 |
| td(off) | Turn-off Delay Time | TJ=25 | - | 155.4 | - | ns | Fig.24 |
| td(off) | Turn-off Delay Time | TJ=150 | - | 184.2 | - | ns | Fig.24 |
| tf | Fall Time | TJ=25 | - | 52 | - | ns | Fig.24 |
| tf | Fall Time | TJ=150 | - | 90 | - | ns | Fig.24 |
| Eon | Turn-on Switching Energy | TJ=25 | - | 1.3 | - | mJ | |
| Eon | Turn-on Switching Energy | TJ=150 | - | 1.44 | - | mJ | |
| Eoff | Turn-off Switching Energy | TJ=25 | - | 0.75 | - | mJ | |
| Eoff | Turn-off Switching Energy | TJ=150 | - | 1.13 | - | mJ | |
| Trr | Diode Reverse Recovery Time | VR=400V, RG=3.3, IF=50A, di/dt=400A/s | - | 73.8 | - | ns | Fig.28 |
| Qrr | Diode Reverse Recovery Charge | - | 0.95 | - | uC | Fig.28 | |
| Irrm | Diode Peak Reverse Recovery Current | - | 19 | - | A | Fig.28 | |
| Gate Charge Characteristics | |||||||
| Qg | Gate Charge Total | VCC=520V, IC=50A, VGE=0 to 15V | - | 135 | - | nC | Fig.7 |
| Qgc | Gate-emitter charge | - | 22 | - | nC | ||
| Qge | Gate-collector charge | - | 35 | - | nC | ||
Product Attributes:
- Brand: Bestirpower
- Technology: Trench FS IGBT
- Package Type: TO247-3L
- Ordering Information: BKW65N050HS1
Package Marking and Ordering Information:
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BKW65N050HS1 | BKW65N050HS1 | TO247-3L | Tube | 50 units |
Disclaimer: Bestirpower reserves the right to make changes, corrections, enhancements, modifications, and improvements to Bestirpower products and/or to this document at any time without notice. The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Bestirpower does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Products or technical information described in this document. This document is the property of Bestirpower Co,. LTD., and not allowed to copy or transformed to other format if not under the authority approval. 2025 Bestirpower All rights Reserved
2512111635_Bestirpower-BKW65N050HS1_C53152697.pdf
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