N Channel Power MOSFET Bestirpower BMW60N076UC1 with Low On Resistance and Optimized Charge Coupling Technology
Key Attributes
Model Number:
BMW60N076UC1
Product Custom Attributes
Drain To Source Voltage:
600V
Configuration:
-
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+150℃
RDS(on):
76mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
162pF
Pd - Power Dissipation:
500W
Input Capacitance(Ciss):
3.44nF
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
BMW60N076UC1
Package:
TO-247-3
Product Description
Product Overview
The BMW60N076UC1 is a high-performance N-Channel Power MOSFET from Bestirpower, engineered with advanced super junction technology. This MOSFET offers exceptionally low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. Designed for user-friendliness, it provides the advantage of low EMI and reduced switching losses, making it ideal for demanding applications. Its ultra-fast body diode and extremely low FOM (Rdson*Qg and Eoss) contribute to high commutation ruggedness.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Diode Type: Ultra-fast body diode
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| BVDSS @ TJ,max | Drain to Source Voltage | - | - | - | 650 | V |
| ID | Drain Current (Continuous, TC = 25) | - | - | - | 52 | A |
| RDS(on),max | Static Drain to Source On Resistance | VGS = 10 V, ID = 23 A, TJ = 25 | - | 70 | 76 | m |
| Qg,typ | Total Gate Charge | VDD= 400 V, ID = 23 A, VGS = 0 to 10 V | - | 80 | - | nC |
| Applications | ||||||
| PC power, Server power supply, Telecom, Solar inverter, Super charger for automobiles | ||||||
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage | (TC = 25 unless otherwise noted) | - | - | 600 | V |
| VGSS | Gate to Source Voltage | - | - | 30 | V | |
| ID | Drain Current Continuous (TC = 125) | - | - | - | 52 | A |
| IDM | Drain Current Pulsed | - | - | - | 155 | A |
| EAS | Single Pulsed Avalanche Energy | (VDD=50V, RG=25, Starting Tj=25C) | - | - | 625 | mJ |
| IAR | Avalanche Current | - | - | - | 5 | A |
| dv/dt | MOSFET dv/dt | - | - | - | 50 | V/ns |
| Peak Diode Recovery dv/dt | (VDClink=400V; VDS,peak| - | - | - | 50 | V/ns | |
| PD | Power Dissipation (TC = 25) | - | - | - | - | W |
| TJ , TSTG | Operating and Storage Temperature Range | - | -55 | - | 150 | |
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | - | - | - | 260 | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | - | - | - | 0.25 | /W |
| RJA | Thermal Resistance, Junction to Ambient, Max. | - | - | - | 62 | /W |
| Package Marking and Ordering Information | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | - | - |
| BMW60N076UC1 | BMW60N076UC1 | TO247-3 | Tube | 30 units | - | - |
| Electrical Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 600 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V, TJ = 25 | - | - | 10 | A |
| IGSS | Gate-Source Leakage Current | VGS = 30 V, VDS = 0 V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VGS = VDS , ID = 1 mA | 3.0 | - | 5.0 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 23 A, TJ = 25 | - | 70 | 76 | m |
| Ciss | Input Capacitance | VGS = 0 V, VDS = 50V, f = 250 kHz | - | 3440 | - | pF |
| Coss | Output Capacitance | - | - | 162 | - | pF |
| Crss | Reverse transfer capacitance | - | - | 7 | - | pF |
| Co(tr) | Time Related Output Capacitance | (VDS = 0 V to 400 V, VGS = 0 V) | - | 557 | - | pF |
| Co(er) | Energy Related Output Capacitance | (VDS = 0 V to 400 V, VGS = 0 V) | - | 107 | - | pF |
| Qg(tot) | Total Gate Charge at 10 V | VDD= 400 V, ID = 23 A, VGS = 0 to 10 V | - | 80 | - | nC |
| Qgs | Gate to Source Charge | - | - | 19 | - | nC |
| Qgd | Gate to Drain Miller Charge | - | - | 34 | - | nC |
| Vplateau | Gate plateau voltage | - | - | 6 | - | V |
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 23 A, VGS = 10 V | - | 85 | - | ns |
| tr | Turn-On Rise Time | - | - | 14 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 130 | - | ns |
| tf | Turn-Off Fall Time | - | - | 14 | - | ns |
| VSD | Diode Forward Voltage | VGS = 0 V, IF = 23 A, Tf= 25 | - | 0.89 | - | V |
| trr | Reverse Recovery Time | VR = 400 V, IF = 23 A, diF/dt = 100 A/s | - | 145 | - | ns |
| Qrr | Reverse Recovery Charge | - | - | 1.15 | - | C |
| Irmm | Peak reverse recovery current | - | - | 14 | - | A |
2412021740_Bestirpower-BMW60N076UC1_C42401703.pdf
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