High Commutation Ruggedness Bestirpower BMF65N100UC1 Power MOSFET with Optimized Charge Coupling

Key Attributes
Model Number: BMF65N100UC1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
35A
RDS(on):
100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@1000uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.8pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
34W
Input Capacitance(Ciss):
2.99nF@50V
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
BMF65N100UC1
Package:
TO-220F
Product Description

Product Overview

The BMF65N100UC1 is a Super Junction Power MOSFET developed by Bestirpower, leveraging advanced super junction technology to achieve very low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling technology, offering designers the advantage of low EMI and reduced switching losses. Its ultra-fast body diode and extremely low losses, attributed to a very low FOM (Rdson*Qg and Eoss), contribute to high commutation ruggedness. The device is suitable for AC/DC power supplies, PC power, telecom/server applications, and solar inverters.

Product Attributes

  • Brand: Bestirpower
  • Technology: Super Junction Power MOSFET
  • Package: TO-220F
  • Revision: 1.1

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
Absolute Maximum Ratings
BVDSS@ TJ,max Drain to Source Voltage 650 V
ID Drain Current (Continuous, TC = 25) 35 A
ID Drain Current (Continuous, TC = 100) 22 A
IDM Drain Current Pulsed 105 A
EAS Avalanche Energy, Single Pulsed VDD=50V, RG=25, Starting Tj=25C 750 mJ
dv/dt Rate of voltage change 50 V/ns
Reverse diode dv/dt VDClink=400V; VDS,peak 50 V/ns
PD Power Dissipation (TC = 25) 34 W
TJ , TSTG Operating and Storage Temperature Range -55 150
Is Continuous diode forward current 35 A
IS,pulse Diode pulse current 105 A
Thermal Characteristics
RJC Thermal Resistance, Junction to Case, Max. 3.67 /W
RJA Thermal Resistance, Junction to Ambient, Max. 62.5 /W
Tsold Soldering temperature, wavesoldering only allowed at leads 260
Electrical Characteristics (TJ = 25 unless otherwise noted)
Off Characteristics
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA 650 V
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V 10 A
IGSS Gate-Source Leakage Current VGS = 30V, VDS = 0 V 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS , ID = 1 mA 3.5 4.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID =18A TJ=25 82 100 m
Dynamic Characteristics
Ciss Input Capacitance VGS=0V, VDS=50V, f=250KHz 2990 pF
Coss Output Capacitance VGS=0V, VDS=50V, f=250KHz 141 pF
Co(tr) Time Related Output Capacitance VDS = 0 to 400 V, VGS = 0 V 452 pF
Co(er) Energy Related Output Capacitance 88 pF
Crss Reverse transfer capacitance VGS=0V, VDS=50V, f=250KHz 5.8 pF
Qg(tot) Total Gate Charge at 10 V VDD = 400 V, ID = 18A, VGS =0 to 10 V 66 nC
Qgs Gate to Source Charge 20 nC
Qgd Gate to Drain Miller Charge 25 nC
td(on) Turn-On Delay Time VDD = 400 V, ID = 18A, VGS = 10 V 21 ns
tr Turn-On Rise Time 19 ns
td(off) Turn-Off Delay Time 76 ns
tf Turn-Off Fall Time 8 ns
Source-Drain Diode Characteristics
VSD Diode Forward Voltage VGS = 0 V,IF=18A TJ=25 0.88 V
trr Reverse Recovery Time VR = 400 V, IF= 18 A, diF/dt = 100 A / s 140 ns
Qrr Reverse Recovery Charge 1.15 C
Imm Peak reverse recovery current 15 A
IAR Avalanche current, repetitive ID=12.5A 12.5 A

Package Marking and Ordering Information

Part Number Top Marking Package Packing Method Quantity
BMF65N100UC1 BMF65N100UC1 TO-220F Tube 50 units

2508071805_Bestirpower-BMF65N100UC1_C50198507.pdf

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