High Commutation Ruggedness Bestirpower BMF65N100UC1 Power MOSFET with Optimized Charge Coupling
Product Overview
The BMF65N100UC1 is a Super Junction Power MOSFET developed by Bestirpower, leveraging advanced super junction technology to achieve very low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling technology, offering designers the advantage of low EMI and reduced switching losses. Its ultra-fast body diode and extremely low losses, attributed to a very low FOM (Rdson*Qg and Eoss), contribute to high commutation ruggedness. The device is suitable for AC/DC power supplies, PC power, telecom/server applications, and solar inverters.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
- Package: TO-220F
- Revision: 1.1
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| BVDSS@ TJ,max | Drain to Source Voltage | 650 | V | |||
| ID | Drain Current (Continuous, TC = 25) | 35 | A | |||
| ID | Drain Current (Continuous, TC = 100) | 22 | A | |||
| IDM | Drain Current Pulsed | 105 | A | |||
| EAS | Avalanche Energy, Single Pulsed | VDD=50V, RG=25, Starting Tj=25C | 750 | mJ | ||
| dv/dt | Rate of voltage change | 50 | V/ns | |||
| Reverse diode dv/dt | VDClink=400V; VDS,peak| | | 50 | V/ns | | |
| PD | Power Dissipation (TC = 25) | 34 | W | |||
| TJ , TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| Is | Continuous diode forward current | 35 | A | |||
| IS,pulse | Diode pulse current | 105 | A | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 3.67 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 62.5 | /W | |||
| Tsold | Soldering temperature, wavesoldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V | 10 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30V, VDS = 0 V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS , ID = 1 mA | 3.5 | 4.5 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID =18A TJ=25 | 82 | 100 | m | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=50V, f=250KHz | 2990 | pF | ||
| Coss | Output Capacitance | VGS=0V, VDS=50V, f=250KHz | 141 | pF | ||
| Co(tr) | Time Related Output Capacitance | VDS = 0 to 400 V, VGS = 0 V | 452 | pF | ||
| Co(er) | Energy Related Output Capacitance | 88 | pF | |||
| Crss | Reverse transfer capacitance | VGS=0V, VDS=50V, f=250KHz | 5.8 | pF | ||
| Qg(tot) | Total Gate Charge at 10 V | VDD = 400 V, ID = 18A, VGS =0 to 10 V | 66 | nC | ||
| Qgs | Gate to Source Charge | 20 | nC | |||
| Qgd | Gate to Drain Miller Charge | 25 | nC | |||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 18A, VGS = 10 V | 21 | ns | ||
| tr | Turn-On Rise Time | 19 | ns | |||
| td(off) | Turn-Off Delay Time | 76 | ns | |||
| tf | Turn-Off Fall Time | 8 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V,IF=18A TJ=25 | 0.88 | V | ||
| trr | Reverse Recovery Time | VR = 400 V, IF= 18 A, diF/dt = 100 A / s | 140 | ns | ||
| Qrr | Reverse Recovery Charge | 1.15 | C | |||
| Imm | Peak reverse recovery current | 15 | A | |||
| IAR | Avalanche current, repetitive | ID=12.5A | 12.5 | A | ||
Package Marking and Ordering Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BMF65N100UC1 | BMF65N100UC1 | TO-220F | Tube | 50 units |
2508071805_Bestirpower-BMF65N100UC1_C50198507.pdf
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