n channel enhanced power mosfet BL BLP02N06 T with low gate charge and improved switching performance

Name: n channel enhanced power mosfet BL BLP02N06 T with low gate charge and improved switching performance
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BLP02N06-T
Availability: InStock

Key Attributes

Model Number: BLP02N06-T

Product Custom Attributes

Drain To Source Voltage:

60V

Current - Continuous Drain(Id):

120A

RDS(on):

1.8mΩ@10V

Gate Threshold Voltage (Vgs(th)):

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

57.5pF

Pd - Power Dissipation:

192.3W

Output Capacitance(Coss):

1.519nF

Input Capacitance(Ciss):

4.348nF

Gate Charge(Qg):

68.4nC@10V

Mfr. Part #:

BLP02N06-T

Package:

TOLL-8

Product Description

Product Overview

The Belling BLP02N06 is an N-channel Enhanced Power MOSFET designed using advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy capabilities. It is an ideal component for synchronous rectification and high-speed switching applications, offering fast switching, low on-resistance, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. This product is RoHS compliant.

Product Attributes

Brand: Belling
Product Code: BLP02N06
Technology: N-channel Enhanced Power MOSFET, Advanced Double Trench Technology
Certifications: RoHS product
Origin: Proprietary Information (Shanghai Belling)

Technical Specifications

Symbol	Parameter	Rating/Value	Unit	Conditions
KEY CHARACTERISTICS
VDSS	Drain-Source Voltage	60	V
ID	Continuous Drain Current	120	A	Package Limited
RDS(on)	Drain-Source On-Resistance	1.8 (typ)	m	@10V
ABSOLUTE RATINGS
VDSS	Drain-Source Voltage	60	V	TC=25C, unless otherwise specified
ID	Continuous Drain Current, Silicon Limited	232	A	TC=25C
ID	Continuous Drain Current, Package Limited	120	A	TC=25C
ID	Continuous Drain Current @TC=100C, Silicon Limited	146.9	A
IDM	Pulsed Drain Current	480	A	Note1
VGS	Gate-Source Voltage	20	V
EAS	Avalanche Energy	506	mJ	Note2
PD	Power Dissipation	192.3	W
TJ, Tstg	Operating Junction and Storage Temperature Range	-55 to 150
TL	Maximum Temperature for Soldering	260
Thermal characteristics
RJC	Thermal resistance, Junction-Case	0.65	/W	Max
RJA	Thermal resistance, Junction-Ambient	62.5	/W	Max
OFF Characteristics
VDSS	Drain-Source Breakdown Voltage	60 (Min) - 68 (Max)	V	VGS=0V, ID=250A
IDSS	Drain-Source Leakage Current	1 (Max)	A	VDS=60V, VGS=0V
IDSS	Drain-Source Leakage Current	100 (Max)	A	VDS=48V, VGS=0V @TC=125C
IGSS(F)	Gate-Source Forward Leakage	100 (Max)	nA	VGS=+20V
IGSS(R)	Gate-Source Reverse Leakage	-100 (Max)	nA	VGS=-20V
ON Characteristics
RDS(on)	Drain-Source On-Resistance	1.8 (Typ) - 2.3 (Max)	m	VGS=10V, ID=50A
VGS(th)	Gate Threshold Voltage	2 (Min) - 4 (Max)	V	VDS=VGS, ID=250A
Dynamic Characteristics
Ciss	Input Capacitance	4348 (Typ)	pF	VDS=30V, VGS=0, f=1MHz
Coss	Output Capacitance	1519 (Typ)	pF	VDS=30V, VGS=0, f=1MHz
Crss	Reverse Transfer Capacitance	57.5 (Typ)	pF	VDS=30V, VGS=0, f=1MHz
Qg	Total Gate Charge	68.4 (Typ)	nC	VDD=30V, ID=50A, VGS=10V
Qgs	Gate-Source Charge	22.4 (Typ)	nC	VDD=30V, ID=50A, VGS=10V
Qgd	Gate-Drain Charge	10.5 (Typ)	nC	VDD=30V, ID=50A, VGS=10V
Switching Characteristics
td(on)	Turn-On Delay Time	25 (Typ)	ns	VDD=30V, ID=50A, VGS=10V, RG=3, Resistive Load
tr	Rise Time	21 (Typ)	ns	VDD=30V, ID=50A, VGS=10V, RG=3, Resistive Load
td(off)	Turn-Off Delay Time	60 (Typ)	ns	VDD=30V, ID=50A, VGS=10V, RG=3, Resistive Load
tf	Fall Time	15 (Typ)	ns	VDD=30V, ID=50A, VGS=10V, RG=3, Resistive Load
Source-Drain Diode Characteristics
IS	Continuous Source Current	120	A
ISM	Maximum Pulsed Current	480	A
VSD	Diode Forward Voltage	1.2 (Max)	V	VGS=0V, IS=50A
Trr	Reverse Recovery Time	70 (Typ)	ns	Is=50A,VGS=0, di/dt=100A/us
Qrr	Reverse Recovery Charge	115 (Typ)	nC	Is=50A,VGS=0, di/dt=100A/us
Ordering Information
Product Code	Package	Device Marking	Packing
BLP02N06-T	TOLL8	P02N06	Reel

Applications

Synchronous rectification
High speed switching applications

Package Description

TOLL8

Important Notes

Exceeding the maximum ratings of the device may cause damage or permanent failure. Please do not exceed the absolute maximum ratings during circuit design.
When installing a heat sink, pay attention to the torsional moment and the smoothness of the heat sink.
MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
Shanghai Belling reserves the right to make changes to this specification sheet without prior notice.

Contact Information

Company: Shanghai Belling Co., Ltd.

Address: No. 810 Yishan Road, Shanghai, 200233, China

Contact: https://www.belling.com.cn/contact.html

2507211541_BL-BLP02N06-T_C49328366.pdf

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