P Channel Enhancement Mode Power MOSFET BL BLM4953 with Low Gate Charge and Excellent RDS ON Performance
Key Attributes
Model Number:
BLM4953
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.1A
RDS(on):
55mΩ@10V,5.1A
Gate Threshold Voltage (Vgs(th)):
3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
1 P-Channel
Input Capacitance(Ciss):
520pF
Output Capacitance(Coss):
130pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
BLM4953
Package:
SOP-8
Product Description
Product Overview
The Belling BLM4953 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is well-suited for load switch and PWM applications, providing high power and current handling capability. It is a lead-free product.
Product Attributes
- Brand: Belling
- Product Type: P-Channel Enhancement Mode Power MOSFET
- Technology: Advanced Trench Technology
- Certifications: Pb Free Product
- Package: SOP-8
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Drain Current | ID | -5.1 | A | |||
| RDS(ON) | VGS=-4.5V | 105 | m | |||
| RDS(ON) | VGS=-10V | 55 | m | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TA=25) | -30 | V | ||
| Gate-Source Voltage | VGS | (TA=25) | 20 | V | ||
| Drain Current-Continuous | ID | (TA=25) | -5.1 | A | ||
| Drain Current-Pulsed | IDM | (Note 1) | -20 | A | ||
| Maximum Power Dissipation | PD | (TA=25) | 2.5 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | (Note 2) | 50 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | -33 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V,VGS=0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1 | -1.6 | -3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-5.1A (Note 3) | 48 | 55 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-4.2A (Note 3) | 73 | 105 | m | |
| Forward Transconductance | gFS | VDS=-15V,ID=-4.5A | 4 | 7 | S | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | (Note 4) | 520 | PF | ||
| Output Capacitance | Coss | (Note 4) | 130 | PF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz (Note 4) | 70 | PF | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | (Note 4) | 15 | nS | ||
| Turn-on Rise Time | tr | (Note 4) | 13 | nS | ||
| Turn-Off Delay Time | td(off) | (Note 4) | 58 | nS | ||
| Turn-Off Fall Time | tf | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 (Note 4) | 21 | nS | ||
| Total Gate Charge | Qg | (Note 4) | 12 | nC | ||
| Gate-Source Charge | Qgs | (Note 4) | 2.2 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-15V,ID=-5.3A,VGS=-10V (Note 4) | 3 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-1.7A (Note 3) | -1.2 | V | ||
Applications
- PWM applications
- Load switch
- Power management
Ordering Information
| Device Marking | Device | Package | Reel Size | Tape width | Quantity |
|---|---|---|---|---|---|
| 4953 | BLM4953 | SOP-8 | 330mm | 12mm | 2500 units |
1809291620_BL-BLM4953_C92447.pdf
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