NPN Silicon Transistor BLUE ROCKET MMBT4401 SOT23 Package with 40V Collector Emitter Voltage Rating

Key Attributes
Model Number: MMBT4401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT4401
Package:
SOT-23
Product Description

Product Overview

The MMBT4401 is a silicon NPN transistor housed in a SOT-23 plastic package. It is designed for medium power amplification and switching circuits, capable of handling collector currents up to 500 mA. This transistor is suitable for applications requiring moderate power handling and efficient switching. It features a moisture sensitivity level of 1 and ESD ratings of 4 kV for the human body model and 400 V for the machine model.

Product Attributes

  • Package Type: SOT-23
  • Transistor Type: NPN Silicon
  • Moisture Sensitivity Level: 1
  • ESD Rating (Human Body Model): 4 kV
  • ESD Rating (Machine Model): 400 V
  • Marking Code: H2X

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 40 V
Emitter to Base Voltage VEBO 6.0 V
Collector Current IC 600 mA
Collector Power Dissipation PC 350 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150

Electrical Characteristics (Ta=25)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector to Emitter Breakdown Voltage VCEO IC=1.0mA, IB=0 40 V
Collector to Base Breakdown Voltage VCBO IC=0.1mA, IE=0 60 V
Emitter to Base Breakdown Voltage VEBO IE=0.1mA, IC=0 6.0 V
Collector Cut-Off Current ICBO VCB=60V, IE=0 50 nA
Emitter Cut-Off Current IEBO VEB=6.0V, IC=0 50 nA
DC Current Gain hFE VCE=1.0V, IC=150mA 100 300
VCE=2.0V, IC=500mA 40
VCE=1.0V, IC=10mA 80
VCE=1.0V, IC=1.0mA 40
Collector-Emitter Saturation Voltage VCE(sat) IC=150mA, IB=15mA 0.4 V
IC=500mA, IB=50mA 0.75 V
Base-Emitter Saturation Voltage VBE(sat) IC=150mA, IB=15mA 0.75 0.95 V
IC=500mA, IB=50mA 1.2 V
Transition Frequency fT VCE=10V, IC=20mA, f=100MHz 250 MHz
Delay Time td VCC=30V, IC=150mA, IB1=15mA 15 ns
Rise Time tr 20 ns
Storage Time ts VCC=30V, IC=150mA, IB1=-IB2=15mA 225 ns
Fall Time tf 30 ns

Packaging Specifications

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Reel Dimensions Box Dimensions
SOT-23 3,000 10 30,000 6 180,000 78 180120180

2410121228_BLUE-ROCKET-MMBT4401_C305440.pdf

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