switching device Bestirpower BMB80N180C1 N Channel MOSFET designed for power supplies and LED lighting
Key Attributes
Model Number:
BMB80N180C1
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.9pF@100V
Number:
1 N-channel
Input Capacitance(Ciss):
2.44nF@100V
Pd - Power Dissipation:
250W
Gate Charge(Qg):
56nC
Mfr. Part #:
BMB80N180C1
Package:
TO-263-2L
Product Description
Product Overview
The BMB80N180C1 is a high-performance N-Channel Power MOSFET from Bestirpower, engineered with advanced super junction technology. This MOSFET offers exceptionally low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. Designed for user-friendliness, it provides designers with the advantage of Low EMI and reduced switching losses. Key applications include PC power supplies, server power supplies, telecommunications, LED lighting, EV chargers, and solar/UPS systems. It features an ultra-fast body diode, extremely low losses due to a very low FOM (Figure of Merit), and very high commutation ruggedness. This device is Halogen Free and RoHS compliant.
Product Attributes
- Brand: Bestirpower
- Technology: Advanced Super Junction
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Description | ||||||
| VDS@TJ,max | Drain to Source Voltage at TJ,max | 850 | V | |||
| ID | Drain Current | (TC = 25) | 23 | A | ||
| ID | Drain Current | (TC = 100) | 15 | A | ||
| RDS(on),max | On-Resistance | 150 | 180 | m | ||
| Qg,typ | Total Gate Charge | 56 | nC | |||
| Absolute Maximum Ratings (TC= 25 unless otherwise noted) | ||||||
| VDS | Drain to Source Voltage1) | 800 | V | |||
| VGS | Gate to Source Voltage | 30 | V | |||
| ID | Drain Current Continuous (TC = 25) | 23 | A | |||
| ID | Drain Current Continuous (TC = 100) | 15 | A | |||
| IDM | Drain Current Pulsed | 70 | A | |||
| dv/dt | MOSFET dv/dt ruggedness | 50 | V/ns | |||
| dv/dt | Diode Recovery dv/dt ruggedness | 50 | V/ns | |||
| TJ, TSTG | Storage Temperature Range | -55 | 150 | |||
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.5 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. *minimal footprint | 62.5 | /W | |||
| PD | Power Dissipation (TC = 25) | 250 | W | |||
| EAS | Single Pulsed Avalanche Energy | 845 | mJ | |||
| IAR | Repetitive Avalanche Energy | 13 | A | |||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS= 0 V, ID = 250A | 800 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 800 V, VGS = 0 V TJ=25C | - | - | 10 | A |
| IGSS | Gate-Source Leakage Current | VGS= 30 V, VDS= 0 V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS= VDS, ID = 250A | 2.5 | 3.5 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 12A, TJ=25C | - | 150 | 180 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=100V, f=250KHz | - | 2440 | - | pF |
| Coss | Output Capacitance | - | 83 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 1.9 | - | pF | |
| Co(er) | Energy Related Output Capacitance | VGS= 0V,VDS= 0V to 500 V | - | 66 | - | pF |
| Qg | Total Gate Charge | VGS = 10V, VDD =640V, ID = 24A | - | 56 | - | nC |
| Qgs | Gate to Source Charge | - | 15 | - | nC | |
| Qgd | Gate to Drain Miller Charge | - | 21 | - | nC | |
| Vplateau | Gate plateau voltage | - | 5.5 | - | V | |
| RG | Gate Resistance | VDD =0V, VGS = 0V, f = 1.0MHz | - | - | 4 | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGS = 10V, VDD= 400V, ID= 12A | - | 20 | - | ns |
| tr | Turn-On Rise Time | - | 13 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 117 | - | ns | |
| tf | Turn-Off Fall Time | - | 12 | - | ns | |
| Co(tr) | Time Related Output Capacitance | VGS= 0V,VDS= 0V to 500 V | - | 214 | - | pF |
| Reverse Diode Characteristics | ||||||
| ISD | Continuous Diode Forward Current | - | - | 23 | A | |
| VSD | Diode Forward Voltage | IF = 12A, VGS = 0V | - | 0.8 | - | V |
| trr | Reverse Recovery Time | VR = 60V IF =24A diF/dt = 100A/s | - | 375 | - | ns |
| Qrr | Reverse Recovery Charge | - | 6.7 | - | C | |
| Irrm | Reverse Recovery Current | - | - | 29 | A | |
| Package Marking and Ordering Information | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | ||
| BMB80N180C1 | BMB80N180C1 | TO263-2L | Tape & Reel | 800 units | ||
Applications:
- PC power
- Server power supply
- Telecom
- LED lighting
- EV Charger
- Solar/UPS
Features:
- Ultra-fast body diode.
- Extremely low losses due to very low FOM.
- Very high commutation ruggedness.
- Halogen Free, and RoHS Conlicant.
2504141434_Bestirpower-BMB80N180C1_C47715870.pdf
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