Low Reverse Recovery Silicon Carbide MOSFET Bestirpower BCZ120N80M1 with Robust Avalanche Capability
Key Attributes
Model Number:
BCZ120N80M1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
30A
RDS(on):
80mΩ
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Output Capacitance(Coss):
64pF
Input Capacitance(Ciss):
880pF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
52nC
Mfr. Part #:
BCZ120N80M1
Package:
TO-247-4
Product Description
Product Overview
The BCZ120N80M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers a robust 1200 V breakdown voltage and a continuous drain current of 34 A at 25, with a low on-resistance of 80 m. Key benefits include system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed and low gate charge. The device features a fast intrinsic diode with low reverse recovery, robust avalanche capability, and is 100% avalanche tested. It is also Pb-free, Halogen-free, and RoHS compliant. Ideal for solar inverters, EV charging stations, UPS systems, and industrial power supplies.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Compliance: Pb-free, Halogen Free, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VDSS | Drain to Source Voltage | 1200 | V | |||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current | VGS = 18 V, (TC = 25) | 34 | A | ||
| ID | Drain Current | VGS = 18 V, (TC = 100) | 24 | A | ||
| IDM | Drain Current Pulsed (Note1) | 80 | A | |||
| PD | Power Dissipation (TC = 25) | 150 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | |
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 5.0 mA | 2.0 | 3.0 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 15 A | 80 | 110 | m | |
| gfs | Transconductance | VDS = 20 V, ID = 15 A | 11.4 | S | ||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 250 kHz | 880 | pF | ||
| Coss | Output Capacitance | 64 | pF | |||
| Crss | Reverse Capacitance | 5 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | 26 | J | ||
| Co(er) | Energy Related Output Capacitance | 80 | pF | |||
| Co(tr) | Time Related Output Capacitance | 142 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 15 A, VGS = -5 V / 18 V, Inductive load | 52 | nC | ||
| Qgs | Gate to Source Charge | 13 | nC | |||
| Qgd | Gate to Drain Miller Charge | 17 | nC | |||
| RG | Internal Gate Resistance | f = 1 MHz | 4.0 | |||
| td(on) | Turn-On Delay Time | VDS = 800 V, ID = 15 A, VGS = -5 V / 18 V, RG = 2 , FWD : BCH120S010D1, Inductive load | 14 | ns | ||
| tr | Turn-On Rise Time | 9 | ns | |||
| td(off) | Turn-Off Delay Time | 24 | ns | |||
| tf | Turn-Off Fall Time | 8 | ns | |||
| Eon | Turn-on Switching Energy | 75 | J | |||
| Eoff | Turn-off Switching Energy | 47 | J | |||
| Etot | Total Switching Energy | 122 | J | |||
| IS | Maximum Continuous Diode Forward Current | 30 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 80 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 15 A | 4.1 | V | ||
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 15 A, dIF/dt = 3000 A/s, Includes Qoss | 12 | ns | ||
| Qrr | Reverse Recovery Charge | 122 | nC | |||
| RJC | Thermal Resistance, Junction to Case, Max. | 1 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Part Number | BCZ120N80M1 | |||||
| Top Marking | BCZ120N80M1 | |||||
| Package | TO247-4L | |||||
| Packing Method | Tube | |||||
| Quantity | 30 units |
2512291153_Bestirpower-BCZ120N80M1_C42401698.pdf
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