BL BL13N50 A power MOSFET featuring 100 percent avalanche testing and RoHS compliance for operation
BL13N50 Power MOSFET
Product Overview
The BL13N50 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. This transistor is well-suited for applications such as Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose use. Key features include fast switching, low Crss (typical 12pF), 100% avalanche testing, and improved dv/dt capability. It is also a RoHS-compliant product.
Product Attributes
- Brand: Belling
- Product Type: Power MOSFET
- Material: Silicon N-channel
- Certifications: RoHS
Technical Specifications
| Parameter | Rating (TO-220) | Rating (TO-220F) | Unit |
|---|---|---|---|
| VDS@Tj.max | 500 | V | |
| ID | 13 | A | |
| RDS(ON).Typ | 0.37 | ||
| Qg.Typ | 35 | nC | |
| Continuous Drain Current (TC = 100 C) | 8.2 | A | |
| Pulsed Drain Current (Note1) | 52 | A | |
| Gate-to-Source Voltage | 30 | V | |
| Single Pulse Avalanche Energy (Note2) | 850 | mJ | |
| Peak Diode Recovery dv/dt (Note3) | 5.0 | V/ns | |
| Power Dissipation | 190 | 45 | W |
| Derating Factor above 25C | 1.53 | 0.36 | W/ |
| Operating Junction and Storage Temperature Range | 55 to 150 | ||
| Maximum Temperature for Soldering | 300 | ||
| Junction-to-Case Thermal Resistance (RJC) | 0.65 | 2.78 | /W |
| Junction-to-Ambient Thermal Resistance (RJA) | 62.5 | /W | |
| Drain-to-Source Breakdown Voltage (VGS=0V, ID=250A) | 500 | V | |
| Drain to Source Leakage Current (VDS =500V, VGS= 0V, Tj = 25) | 10 | A | |
| Drain to Source Leakage Current (VDS =400V, VGS= 0V, Tj = 125) | 100 | A | |
| Gate to Source Forward Leakage (VGS =+30V) | 100 | nA | |
| Gate to Source Reverse Leakage (VGS =-30V) | -100 | nA | |
| Drain-to-Source On- Resistance (VGS=10V, ID=6.5A) | 0.37 (Typ) / 0.46 (Max) | ||
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | 2.0 (Min) / 4.0 (Max) | V | |
| Forward Transconductance (VDS=20V, ID =6.5A) | 12 | S | |
| Gate resistance (f = 1.0MHz) | 1.5 | ||
| Input Capacitance (VGS = 0V, VDS = 25V, f = 1.0MHz) | 1890 | PF | |
| Output Capacitance | 195 | PF | |
| Reverse Transfer Capacitance | 12 | PF | |
| Turn-on Delay Time (ID =13A, VDD = 250V, VGS = 10V, RG =20) | 32 | ns | |
| Rise Time | 25 | ns | |
| Turn-Off Delay Time | 82 | ns | |
| Fall Time | 31 | ns | |
| Total Gate Charge (ID =13A, VDD =400V, VGS = 10V) | 35 | nC | |
| Gate to Source Charge | 9.3 | nC | |
| Gate to Drain (Miller)Charge | 15 | nC | |
| Continuous Source Current (Body Diode) (TC=25 C) | 13 | A | |
| Maximum Pulsed Current (Body Diode) | 52 | A | |
| Diode Forward Voltage (IS=13A, VGS=0V) | 1.2 | V | |
| Reverse Recovery Time (IS=13A, Tj = 25C, dIF/dt=100A/us, VGS=0V) | 505 | ns | |
| Reverse Recovery Charge | 4091 | nC | |
| Reverse Recovery Current | 16.2 | A | |
Applications
- High frequency switching mode power supply
- Electronic ballast
Ordering Information
| Ordering Code | Package | Packing |
|---|---|---|
| BL13N50-P | TO-220 | Tube |
| BL13N50-A | TO-220F | Tube |
Package Description
TO-220F Package Dimensions (mm)
| Item | MIN | MAX |
|---|---|---|
| A | 9.60 | 10.40 |
| B | 15.40 | 16.20 |
| B1 | 8.90 | 9.50 |
| C | 4.30 | 4.90 |
| C1 | 2.10 | 3.00 |
| D | 2.40 | 3.00 |
| E | 0.60 | 1.00 |
| F | 0.30 | 0.60 |
| G | 1.12 | 1.42 |
| H | 3.40 | 3.80 |
| I | 1.60 | 2.90 |
| L | 12.00 | 14.00 |
| N | 2.34 | 2.74 |
| Q | 3.15 | 3.55 |
| R | 2.90 | 3.30 |
TO-220 Package Dimensions (mm)
| Item | MIN | MAX |
|---|---|---|
| A | 9.60 | 10.60 |
| B | 15.00 | 16.00 |
| B1 | 8.90 | 9.50 |
| C | 4.30 | 4.80 |
| C1 | 2.30 | 3.10 |
| D | 1.20 | 1.40 |
| E | 0.70 | 0.90 |
| F | 0.30 | 0.60 |
| G | 1.17 | 1.37 |
| H | 2.70 | 3.80 |
| L | 12.60 | 14.80 |
| N | 2.34 | 2.74 |
| Q | 2.40 | 3.00 |
| R | 3.50 | 3.90 |
2411121101_BL-BL13N50-A_C2924851.pdf
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