BL BL13N50 A power MOSFET featuring 100 percent avalanche testing and RoHS compliance for operation

Key Attributes
Model Number: BL13N50-A
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
RDS(on):
460mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
195pF
Input Capacitance(Ciss):
1.89nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
BL13N50-A
Package:
TO-220F-3
Product Description

BL13N50 Power MOSFET

Product Overview

The BL13N50 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. This transistor is well-suited for applications such as Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose use. Key features include fast switching, low Crss (typical 12pF), 100% avalanche testing, and improved dv/dt capability. It is also a RoHS-compliant product.

Product Attributes

  • Brand: Belling
  • Product Type: Power MOSFET
  • Material: Silicon N-channel
  • Certifications: RoHS

Technical Specifications

Parameter Rating (TO-220) Rating (TO-220F) Unit
VDS@Tj.max 500 V
ID 13 A
RDS(ON).Typ 0.37
Qg.Typ 35 nC
Continuous Drain Current (TC = 100 C) 8.2 A
Pulsed Drain Current (Note1) 52 A
Gate-to-Source Voltage 30 V
Single Pulse Avalanche Energy (Note2) 850 mJ
Peak Diode Recovery dv/dt (Note3) 5.0 V/ns
Power Dissipation 190 45 W
Derating Factor above 25C 1.53 0.36 W/
Operating Junction and Storage Temperature Range 55 to 150
Maximum Temperature for Soldering 300
Junction-to-Case Thermal Resistance (RJC) 0.65 2.78 /W
Junction-to-Ambient Thermal Resistance (RJA) 62.5 /W
Drain-to-Source Breakdown Voltage (VGS=0V, ID=250A) 500 V
Drain to Source Leakage Current (VDS =500V, VGS= 0V, Tj = 25) 10 A
Drain to Source Leakage Current (VDS =400V, VGS= 0V, Tj = 125) 100 A
Gate to Source Forward Leakage (VGS =+30V) 100 nA
Gate to Source Reverse Leakage (VGS =-30V) -100 nA
Drain-to-Source On- Resistance (VGS=10V, ID=6.5A) 0.37 (Typ) / 0.46 (Max)
Gate Threshold Voltage (VDS = VGS, ID = 250A) 2.0 (Min) / 4.0 (Max) V
Forward Transconductance (VDS=20V, ID =6.5A) 12 S
Gate resistance (f = 1.0MHz) 1.5
Input Capacitance (VGS = 0V, VDS = 25V, f = 1.0MHz) 1890 PF
Output Capacitance 195 PF
Reverse Transfer Capacitance 12 PF
Turn-on Delay Time (ID =13A, VDD = 250V, VGS = 10V, RG =20) 32 ns
Rise Time 25 ns
Turn-Off Delay Time 82 ns
Fall Time 31 ns
Total Gate Charge (ID =13A, VDD =400V, VGS = 10V) 35 nC
Gate to Source Charge 9.3 nC
Gate to Drain (Miller)Charge 15 nC
Continuous Source Current (Body Diode) (TC=25 C) 13 A
Maximum Pulsed Current (Body Diode) 52 A
Diode Forward Voltage (IS=13A, VGS=0V) 1.2 V
Reverse Recovery Time (IS=13A, Tj = 25C, dIF/dt=100A/us, VGS=0V) 505 ns
Reverse Recovery Charge 4091 nC
Reverse Recovery Current 16.2 A

Applications

  • High frequency switching mode power supply
  • Electronic ballast

Ordering Information

Ordering Code Package Packing
BL13N50-P TO-220 Tube
BL13N50-A TO-220F Tube

Package Description

TO-220F Package Dimensions (mm)

Item MIN MAX
A9.6010.40
B15.4016.20
B18.909.50
C4.304.90
C12.103.00
D2.403.00
E0.601.00
F0.300.60
G1.121.42
H3.403.80
I1.602.90
L12.0014.00
N2.342.74
Q3.153.55
R2.903.30

TO-220 Package Dimensions (mm)

Item MIN MAX
A9.6010.60
B15.0016.00
B18.909.50
C4.304.80
C12.303.10
D1.201.40
E0.700.90
F0.300.60
G1.171.37
H2.703.80
L12.6014.80
N2.342.74
Q2.403.00
R3.503.90

2411121101_BL-BL13N50-A_C2924851.pdf

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