N Channel Power MOSFET BL BLM8205 with Low Gate Charge and High Pulsed Drain Current Capability
Key Attributes
Model Number:
BLM8205
Product Custom Attributes
Drain To Source Voltage:
19.5V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 N-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
800pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
60nC@4.5V
Mfr. Part #:
BLM8205
Package:
SOT-23-6L
Product Description
Product Overview
The BLM8205 is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, providing high power and current handling capabilities. It is a lead-free product available in a surface mount SOT23-6L package.
Product Attributes
- Brand: Belling
- Product Code: BLM8205
- Package: SOT23-6L
- Certifications: Pb Free
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | 19.5 | V | |
| Gate-Source Voltage | VGS | 8 | V | |
| Drain Current-Continuous | ID | 4 | A | |
| Drain Current-Pulsed (Note 1) | IDM | 25 | A | |
| Maximum Power Dissipation | PD | 1.25 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ||
| Thermal Characteristic | ||||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 100 | /W | |
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||
| Off Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 19.5 (Min) - 21 (Typ) | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=19.5V,VGS=0V | - 1 (Max) | A |
| Gate-Body Leakage Current | IGSS | VGS=8V,VDS=0V | 100 (Max) | nA |
| On Characteristics (Note 3) | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.45 (Min) - 1.2 (Max) | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=4A | 21 (Typ) - 27 (Max) | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=3A | 27 (Typ) - 40 (Max) | m |
| Forward Transconductance | gFS | VDS=5V,ID=4A | 10 (Typ) | S |
| Dynamic Characteristics (Note4) | ||||
| Input Capacitance | Clss | VDS=8V,VGS=0V, F=1.0MHz | 800 (Typ) | PF |
| Output Capacitance | Coss | 155 (Typ) | PF | |
| Reverse Transfer Capacitance | Crss | 125 (Typ) | PF | |
| Switching Characteristics (Note 4) | ||||
| Turn-on Delay Time | td(on) | VDD=10V,ID=1A, VGS=4V,RGEN=10 | 18 (Typ) | nS |
| Turn-on Rise Time | tr | 5 (Typ) | nS | |
| Turn-Off Delay Time | td(off) | 43 (Typ) | nS | |
| Turn-Off Fall Time | tf | 20 (Typ) | nS | |
| Total Gate Charge | Qg | VDS=10V,ID=4A, VGS=4.5V | 11 (Typ) | nC |
| Gate-Source Charge | Qgs | 2.3 (Typ) | nC | |
| Gate-Drain Charge | Qgd | 2.5 (Typ) | nC | |
| Drain-Source Diode Characteristics | ||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=2A | 1.3 (Typ) | V |
| Diode Forward Current (Note 2) | IS | 2 (Max) | A | |
| Ordering Information | ||||
| Device Marking | 8205 | |||
| Device Package | BLM8205 | SOT23-6L | ||
| Reel Size | 180mm | |||
| Tape width | 8mm | |||
| Quantity | 3000 units | |||
1810010120_BL-BLM8205_C169244.pdf
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