1200V 40A Trench FS IGBT Bestirpower BKW120N040LZ1 suitable for motor drives inverter applications

Key Attributes
Model Number: BKW120N040LZ1
Product Custom Attributes
Pd - Power Dissipation:
328W
Td(off):
138.2ns
Td(on):
24.65ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
5.353nF@25V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Operating Temperature:
-40℃~+150℃@(Tj)
Gate Charge(Qg):
146nC@40A,15V
Reverse Recovery Time(trr):
334ns
Switching Energy(Eoff):
2.75mJ
Turn-On Energy (Eon):
2.4mJ
Mfr. Part #:
BKW120N040LZ1
Package:
TO-247-3L
Product Description

Bestirpower BKW120N040LZ1 1200V 40A Trench FS IGBT

Product Overview

The Bestirpower BKW120N040LZ1 is a Trench FS IGBT designed with advanced technology, offering exceptionally low gate charge for enhanced efficiency. Its optimized gate charge management contributes to significantly higher efficiency, while its user-friendly design provides advantages such as low EMI and reduced switching losses. This IGBT is suitable for applications including inverters for motor drives, AC and DC servo drive amplifiers, and uninterruptible power supplies.

Product Attributes

  • Brand: Bestirpower
  • Technology: Trench FS IGBT
  • Package Type: TO-247-3L
  • Packing Method: Tube
  • Quantity per Package: 30 units

Technical Specifications

Symbol Parameter Test Conditions Value Unit
Absolute Maximum Ratings
VCE Collector-emitter voltage (TJ 25 C) 1200 V
VGE Gate-emitter voltage 20 V
IC DC collector current, limited by TJmax TC = 25 80 A
TC = 100 40 A
IF Diode forward current, limited by TJmax TC = 25 120 A
TC = 100 40 A
IFpulse Diode pulsed current, tp limited by TJmax 120 A
Ptot Power Dissipation TC = 25 328 W
TC = 100 131 W
TJ Junction temperature range -55 ~ 175
TSTG Storage temperature range -40 ~ 150
Tsold Soldering temperature wave soldering only allowed at leads 260
Electrical Characteristics (TJ = 25 unless otherwise noted)
V(BR)CES Collector-emitter Breakdown Voltage VGE=0V, IC=250A 1200 V
ICES Collector Cut-off Current VCE=1200V, VGS=0V 10 A
IGES Gate-emitter Leakage Current VGE=20V, VGE=0V 100 nA
VGE(TH) Gate Threshold Voltage VCE=VGE, IC=1mA 5 V
6.5 V
- V
VCE(sat) Collector-Emitter Saturation Voltage TJ=25, VGE=15V, IC=40A 1.7 V
2.1 V
TJ=175, VGE=15V, IC=40A 2.6 V
VF Forward On-Voltage IF=40A, VGE=0V 2.1 V
Switching Parameters
td(on) Turn-on Delay Time TJ=25 29.2 ns
TJ=125 25.84 ns
TJ=175 24.65 ns
tr Rise Time TJ=25 41.57 ns
TJ=125 49.43 ns
TJ=175 48.3 ns
td(off) Turn-off Delay Time TJ=25 138.2 ns
TJ=125 171.9 ns
TJ=175 189.3 ns
tf Fall Time TJ=25 220.2 ns
TJ=125 325.9 ns
TJ=175 383.7 ns
Eon Turn-on Switching Energy TJ=25 2.34 mJ
TJ=125 10.53 mJ
TJ=175 - mJ
Eoff Turn-off Switching Energy TJ=25 0.97 mJ
TJ=125 - mJ
TJ=175 - mJ
Diode Reverse Recovery Time
trr Diode Reverse Recovery Time TJ=25 334 ns
TJ=125 - ns
TJ=175 - ns
Erec Reverse Recovery Energy TJ=25 - mJ
TJ=125 - mJ
TJ=175 - mJ
Qrr Diode Reverse Recovery Charge TJ=25 146 nC
TJ=125 - nC
TJ=175 - nC
Irrm Diode Peak Reverse Recovery Current TJ=25 - A
TJ=125 - A
TJ=175 - A
Gate Charge Characteristics
Qg Gate Charge Total VCE=600V, IC=40A, VGE=0 to 15V 146 nC
tSC Short-circuit Withstand Time TJ=25, VCC=800V, VGE15V, tp8s - s
Thermal Resistance
RthJC IGBT thermal resistance, junction-case 0.268 /W
RthJC Diode thermal resistance, junction-case 0.415 /W
Dynamic Characteristics
Cies Input Capacitance VCE=25V, VGE=0V, f=100KHz 5353 pF
- pF
- pF
Coes Output Capacitance VCE=25V, VGE=0V, f=100KHz 130 pF
- pF
- pF
Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f=100KHz 22.3 pF
- pF
- pF

2506162235_Bestirpower-BKW120N040LZ1_C49164826.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.