1200V 40A Trench FS IGBT Bestirpower BKW120N040LZ1 suitable for motor drives inverter applications
Bestirpower BKW120N040LZ1 1200V 40A Trench FS IGBT
Product Overview
The Bestirpower BKW120N040LZ1 is a Trench FS IGBT designed with advanced technology, offering exceptionally low gate charge for enhanced efficiency. Its optimized gate charge management contributes to significantly higher efficiency, while its user-friendly design provides advantages such as low EMI and reduced switching losses. This IGBT is suitable for applications including inverters for motor drives, AC and DC servo drive amplifiers, and uninterruptible power supplies.
Product Attributes
- Brand: Bestirpower
- Technology: Trench FS IGBT
- Package Type: TO-247-3L
- Packing Method: Tube
- Quantity per Package: 30 units
Technical Specifications
| Symbol | Parameter | Test Conditions | Value | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| VCE | Collector-emitter voltage | (TJ 25 C) | 1200 | V |
| VGE | Gate-emitter voltage | 20 | V | |
| IC | DC collector current, limited by TJmax | TC = 25 | 80 | A |
| TC = 100 | 40 | A | ||
| IF | Diode forward current, limited by TJmax | TC = 25 | 120 | A |
| TC = 100 | 40 | A | ||
| IFpulse | Diode pulsed current, tp limited by TJmax | 120 | A | |
| Ptot | Power Dissipation | TC = 25 | 328 | W |
| TC = 100 | 131 | W | ||
| TJ | Junction temperature range | -55 ~ 175 | ||
| TSTG | Storage temperature range | -40 ~ 150 | ||
| Tsold | Soldering temperature | wave soldering only allowed at leads | 260 | |
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||
| V(BR)CES | Collector-emitter Breakdown Voltage | VGE=0V, IC=250A | 1200 | V |
| ICES | Collector Cut-off Current | VCE=1200V, VGS=0V | 10 | A |
| IGES | Gate-emitter Leakage Current | VGE=20V, VGE=0V | 100 | nA |
| VGE(TH) | Gate Threshold Voltage | VCE=VGE, IC=1mA | 5 | V |
| 6.5 | V | |||
| - | V | |||
| VCE(sat) | Collector-Emitter Saturation Voltage | TJ=25, VGE=15V, IC=40A | 1.7 | V |
| 2.1 | V | |||
| TJ=175, VGE=15V, IC=40A | 2.6 | V | ||
| VF | Forward On-Voltage | IF=40A, VGE=0V | 2.1 | V |
| Switching Parameters | ||||
| td(on) | Turn-on Delay Time | TJ=25 | 29.2 | ns |
| TJ=125 | 25.84 | ns | ||
| TJ=175 | 24.65 | ns | ||
| tr | Rise Time | TJ=25 | 41.57 | ns |
| TJ=125 | 49.43 | ns | ||
| TJ=175 | 48.3 | ns | ||
| td(off) | Turn-off Delay Time | TJ=25 | 138.2 | ns |
| TJ=125 | 171.9 | ns | ||
| TJ=175 | 189.3 | ns | ||
| tf | Fall Time | TJ=25 | 220.2 | ns |
| TJ=125 | 325.9 | ns | ||
| TJ=175 | 383.7 | ns | ||
| Eon | Turn-on Switching Energy | TJ=25 | 2.34 | mJ |
| TJ=125 | 10.53 | mJ | ||
| TJ=175 | - | mJ | ||
| Eoff | Turn-off Switching Energy | TJ=25 | 0.97 | mJ |
| TJ=125 | - | mJ | ||
| TJ=175 | - | mJ | ||
| Diode Reverse Recovery Time | ||||
| trr | Diode Reverse Recovery Time | TJ=25 | 334 | ns |
| TJ=125 | - | ns | ||
| TJ=175 | - | ns | ||
| Erec | Reverse Recovery Energy | TJ=25 | - | mJ |
| TJ=125 | - | mJ | ||
| TJ=175 | - | mJ | ||
| Qrr | Diode Reverse Recovery Charge | TJ=25 | 146 | nC |
| TJ=125 | - | nC | ||
| TJ=175 | - | nC | ||
| Irrm | Diode Peak Reverse Recovery Current | TJ=25 | - | A |
| TJ=125 | - | A | ||
| TJ=175 | - | A | ||
| Gate Charge Characteristics | ||||
| Qg | Gate Charge Total | VCE=600V, IC=40A, VGE=0 to 15V | 146 | nC |
| tSC | Short-circuit Withstand Time | TJ=25, VCC=800V, VGE15V, tp8s | - | s |
| Thermal Resistance | ||||
| RthJC | IGBT thermal resistance, junction-case | 0.268 | /W | |
| RthJC | Diode thermal resistance, junction-case | 0.415 | /W | |
| Dynamic Characteristics | ||||
| Cies | Input Capacitance | VCE=25V, VGE=0V, f=100KHz | 5353 | pF |
| - | pF | |||
| - | pF | |||
| Coes | Output Capacitance | VCE=25V, VGE=0V, f=100KHz | 130 | pF |
| - | pF | |||
| - | pF | |||
| Cres | Reverse Transfer Capacitance | VCE=25V, VGE=0V, f=100KHz | 22.3 | pF |
| - | pF | |||
| - | pF | |||
2506162235_Bestirpower-BKW120N040LZ1_C49164826.pdf
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