BL BLM10P03 E P Channel MOSFET Offering Low Gate Charge and High Drain Current for Power Electronics
Key Attributes
Model Number:
BLM10P03-E
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
15A
RDS(on):
15mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
P-Channel
Pd - Power Dissipation:
3.3W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
BLM10P03-E
Package:
SOP-8
Product Description
Product Overview
The Belling BLM10P03 is a P-Channel Power MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as battery protection. Its high-density cell design contributes to lower RDS(ON), and it is available in various packages optimized for good heat dissipation.Product Attributes
- Brand: Belling
- Product Line: Green Product
Technical Specifications
| Parameter | Condition | Symbol | Limit | Unit | Package |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | All | |
| Gate-Source Voltage | VGS | 20 | V | All | |
| Drain Current-Continuous | ID | -24 | A | PDFN3.3*3.3 | |
| Drain Current-Continuous | ID | -30 | A | PDFN5*6 | |
| Drain Current-Continuous | ID | -15 | A | SOP8 | |
| Drain Current-Continuous | ID | -40 | A | TO-252 | |
| Drain-Source On-State Resistance | VGS=-10V | RDS(ON) | < 10 | m | All |
| Drain-Source On-State Resistance | VGS=-4.5V | RDS(ON) | < 15 | m | All |
| Drain-Source Breakdown Voltage | VGS=0V, ID=-250A | BVDSS | -30 | V | All |
| Gate Threshold Voltage | VDS=VGS, ID=-250A | VGS(th) | -1.0 to -2.4 | V | All |
| Maximum Power Dissipation | Tc=25 | PD | 8.4 | W | PDFN3.3*3.3 |
| Maximum Power Dissipation | Tc=25 | PD | 13 | W | PDFN5*6 |
| Maximum Power Dissipation | Tc=25 | PD | 3.3 | W | SOP8 |
| Maximum Power Dissipation | Tc=25 | PD | 23.2 | W | TO-252 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 | All | ||
| Thermal Resistance, Junction-to-Ambient | RJC | 15.0 | /W | PDFN3.3*3.3 | |
| Thermal Resistance, Junction-to-Ambient | RJC | 9.6 | /W | PDFN5*6 | |
| Thermal Resistance, Junction-to-Ambient | RJC | 38.3 | /W | SOP8 | |
| Thermal Resistance, Junction-to-Ambient | RJC | 5.4 | /W | TO-252 | |
| Input Capacitance | VDS=-15V, VGS=0V, f=1.0MHz | Clss | 2000 | pF | All |
| Output Capacitance | Coss | 290 | pF | All | |
| Reverse Transfer Capacitance | Crss | 270 | pF | All | |
| Total Gate Charge | VDS=-15V, ID=-17A, VGS=-10V | Qg | 36 | nC | All |
2410121322_BL-BLM10P03-E_C2927424.pdf
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