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quality P Channel Enhancement Mode Power MOSFET BL BLM4407 with Low Gate Charge and Lead Free Package SOP 8 factory
quality P Channel Enhancement Mode Power MOSFET BL BLM4407 with Low Gate Charge and Lead Free Package SOP 8 factory

P Channel Enhancement Mode Power MOSFET BL BLM4407 with Low Gate Charge and Lead Free Package SOP 8

Key Attributes
Model Number: BLM4407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
25mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
271pF
Number:
1 P-Channel
Output Capacitance(Coss):
294pF
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
2.628nF
Gate Charge(Qg):
55.3nC@10V
Mfr. Part #:
BLM4407
Package:
SOP-8
Product Description

Product Overview

The Belling BLM4407 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This high-power and high-current handling device is lead-free and suitable for applications such as battery switches, load switches, and power management.

Product Attributes

  • Brand: Belling
  • Product Type: P-Channel Enhancement Mode Power MOSFET
  • Material: Lead-free product
  • Package: SOP-8

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
General Features
Drain-Source Voltage VDS -30 V
Continuous Drain Current ID -12 A
RDS(ON) VGS=-4.5V 18 25 m
RDS(ON) VGS=-10V 11.5 15 m
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID -12 A
Drain Current-Pulsed (Note 1) IDM -48 A
Maximum Power Dissipation (Tc=25) PD 3 W
Maximum Power Dissipation (Tc=100) PD 1.3 W
Single pulse avalanche energy (Note 2) EAS 171 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 150
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient RJA 41 /W
Electrical Characteristics (TA=25 unless otherwise noted)
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250A -30 -33 - V
Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V - - -1 A
Gate-Body Leakage Current IGSS VGS=20V,VDS=0V - - 100 nA
On Characteristics
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250A -1 -1.5 -3 V
Drain-Source On-State Resistance (Note 3) RDS(ON) VGS=-10V, ID=-6A - 11.5 15 m
Drain-Source On-State Resistance (Note 3) RDS(ON) VGS=-4.5V, ID=-6A - 18 25 m
Forward Transconductance gFS VDS=-10V,ID=-12A 16 - - S
Dynamic Characteristics
Input Capacitance Clss VDS=-15V,VGS=0V, F=1.0MHz - 2628 - PF
Output Capacitance Coss - 294 - PF
Reverse Transfer Capacitance Crss - 271 - PF
Switching Characteristics
Turn-on Delay Time td(on) VDD=-15V, ID=-12A, VGS=-10V,RGEN=1 - 9 - nS
Turn-on Rise Time tr - 8 - nS
Turn-Off Delay Time td(off) - 28 - nS
Turn-Off Fall Time tf 10 - - nS
Total Gate Charge Qg VDS=-15V,ID=-12A VGS=-10V - 55.3 - nC
Gate-Source Charge Qgs - 7.9 - nC
Gate-Drain Charge Qg d - 11.3 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-12A - - -1.2 V

2201121300_BL-BLM4407_C2924846.pdf
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