P Channel Power MOSFET BL BLM2305 Pb Free Type Featuring Low Gate Charge and Superior RDS ON for PWM Applications
Key Attributes
Model Number:
BLM2305
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
75mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 P-Channel
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
740pF
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
7.8nC@4.5V
Mfr. Part #:
BLM2305
Package:
SOT-23
Product Description
Product Overview
The Belling BLM2305 is a Pb-Free, P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This power MOSFET is well-suited for use as a load switch or in Pulse Width Modulation (PWM) applications, providing high power and current handling capability.Product Attributes
- Brand: Belling
- Product Type: Pb Free Product
- Package: SOT-23
- Origin: China (indicated by www.belling.com.cn)
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit |
|---|---|---|---|---|
| General Features | ||||
| Drain-Source Voltage | VDS | -20 | V | |
| Continuous Drain Current | ID | TC =25 | -4.1 | A |
| Continuous Drain Current | ID | TC =70 | -3.2 | A |
| Continuous Drain Current | ID | TA =25 | -3 | A |
| Continuous Drain Current | ID | TA =70 | -2.3 | A |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V | < 75 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V | < 52 | m |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | (TA=25 unless otherwise noted) | -20 | V |
| Gate-Source Voltage | VGS | (TA=25 unless otherwise noted) | 12 | V |
| Continuous Drain Current | ID | TC =25 | -4.1 | A |
| Continuous Drain Current | ID | TC =70 | -3.2 | A |
| Continuous Drain Current | ID | TA =25 | -3 | A |
| Continuous Drain Current | ID | TA =70 | -2.3 | A |
| Drain Current - Pulsed (Note 1) | IDM | -15 | A | |
| Maximum Power Dissipation | PD | 1.7 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ||
| Thermal Characteristic | ||||
| Thermal Resistance,Junction-to-Ambient (Note 2) | RJA | 74 | /W | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -20 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V | -1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -0.45 To -1.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-4.1A (Note 3) | 52 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V, ID=-3A (Note 3) | 75 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-2A | 6 | S |
| Input Capacitance | Clss | VDS=-4V,VGS=0V, F=1.0MHz | 740 | PF |
| Output Capacitance | Coss | VDS=-4V,VGS=0V, F=1.0MHz | 290 | PF |
| Reverse Transfer Capacitance | Crss | VDS=-4V,VGS=0V, F=1.0MHz | 190 | PF |
| Turn-on Delay Time | td(on) | VDD=-4V,ID=-3.3A , RL=-1.2,VGEN=-4.5V,Rg=1 (Note 4) | 12 | nS |
| Turn-on Rise Time | tr | VDD=-4V,ID=-3.3A , RL=-1.2,VGEN=-4.5V,Rg=1 (Note 4) | 35 | nS |
| Turn-Off Delay Time | td(off) | VDD=-4V,ID=-3.3A , RL=-1.2,VGEN=-4.5V,Rg=1 (Note 4) | 30 | nS |
| Turn-Off Fall Time | tf | VDD=-4V,ID=-3.3A , RL=-1.2,VGEN=-4.5V,Rg=1 (Note 4) | 10 | nS |
| Total Gate Charge | Qg | VDS=-4V,ID=-4.1A,VGS=-4.5V (Note 4) | 7.8 | nC |
| Gate-Source Charge | Qgs | VDS=-4V,ID=-4.1A,VGS=-4.5V (Note 4) | 1.2 | nC |
| Gate-Drain Charge | Qgd | VDS=-4V,ID=-4.1A,VGS=-4.5V (Note 4) | 1.6 | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=-4.1A (Note 3) | -1.2 | V |
| Diode Forward Current | IS | (Note 2) | -4.1 | A |
| Ordering Information | ||||
| Device Marking | 2305 | |||
| Device | BLM2305 | |||
| Package | SOT-23 | |||
| Reel Size | 180mm | |||
| Tape width | 8 mm | |||
| Quantity | 3000 units | |||
2409272232_BL-BLM2305_C313518.pdf
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