Trench field stop technology BL BLG15T65FUA-A IGBT suitable for brushless DC motor and power supply
Key Attributes
Model Number:
BLG15T65FUA-A
Product Custom Attributes
Td(off):
234ns
Pd - Power Dissipation:
28W
Td(on):
10ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
9pF
Input Capacitance(Cies):
905pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.4V@1mA
Gate Charge(Qg):
38nC@15V
Pulsed Current- Forward(Ifm):
30A
Output Capacitance(Coes):
41pF
Reverse Recovery Time(trr):
68ns
Switching Energy(Eoff):
200uJ
Turn-On Energy (Eon):
250uJ
Mfr. Part #:
BLG15T65FUA-A
Package:
TO-220F
Product Description
BLG15T65FUA IGBT
The BLG15T65FUA is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench Field Stop (T-FS) technology. This technology provides characteristics such as low VCE(sat), optimized switching performance, and low gate charge (Qg). The device is well-suited for applications requiring high switching frequencies, including Brushless DC (BLDC) motors, Uninterruptible Power Supplies (UPS), and motor drives.
Product Attributes
- Brand: Belling
- Origin: China (implied by www.belling.com.cn)
- Technology: Trench Field Stop (T-FS)
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Key Characteristics | |||
| VCES | 650 | V | |
| IC | 15 | A | |
| VCE(sat).typ | 1.55 | V | |
| Features | |||
| Switching Speed | Fast | ||
| VCE(sat) | Low | ||
| Temperature Coefficient | Positive | ||
| Diode | Fast recovery anti-parallel | ||
| Applications | |||
| BLDC | Yes | ||
| UPS | Yes | ||
| Motor drives | Yes | ||
| Portable power | Yes | ||
| Ordering Information | |||
| Device Marking | 15T65FUA | ||
| Product Code | BLG15T65FUA | ||
| Package Options | TO-220F, TO-263, TO-220 | ||
| Packing Options | Tube, Reel | ||
| Absolute Ratings | |||
| Parameter | TO-220/TO-263 | TO-220F | Unit |
| VCES | 650 | 650 | V |
| IC @TC=25C | 30 | 30 | A |
| IC @TC=100C | 15 | 15 | A |
| ICM (Pulsed) | 60 | 60 | A |
| IF @TC=25C | 15 | 15 | A |
| IF @TC=100C | 7.5 | 7.5 | A |
| IFM (Diode Max) | 30 | 30 | A |
| VGES | ±30 | ±30 | V |
| tSC (Short circuit) | 5.0 | µs | |
| PD @TC=25C | 78 | 28 | W |
| TJmax, Tstg | 150, –55 to 150 | °C | |
| TL (Soldering) | 260 | °C | |
| Thermal Characteristics | |||
| Parameter | TO-220/TO-263 | TO-220F | Unit |
| RθJC (IGBT) | 1.6 | 4.4 | °C/W |
| RθJC (Diode) | 2.1 | 3.9 | °C/W |
| RθJA | 62.5 | 78 | °C/W |
| Electrical Characteristics (TC = 25°C, unless otherwise specified) | |||
| Symbol | Parameter | Values | Unit |
| VCES | Collector-Emitter Breakdown Voltage | 650 | V |
| VCE(sat) | Collector-Emitter Saturation Voltage | 1.55 (typ. @TJ=25°C) | V |
| VGE(TH) | Gate Threshold Voltage | 4.4 - 5.9 | V |
| VF | Diode Forward Voltage | 2.00 (typ. @TJ=25°C) | V |
| ICES | Collector-Emitter Leakage Current | ≤ 15 | µA |
| IGES(F) | Gate-Emitter Forward Leakage Current | ≤ 200 | nA |
| IGES(R) | Gate-Emitter Reverse Leakage Current | ≤ -200 | nA |
| Dynamic Characteristics | |||
| Symbol | Parameter | Values | Unit |
| Ciss | Input Capacitance | 905 (typ.) | pF |
| Coss | Output Capacitance | 41 (typ.) | pF |
| Crss | Reverse Transfer Capacitance | 9 (typ.) | pF |
| QG | Gate charge | 38 (typ.) | nC |
| IGBT Switching Characteristics (TJ=25°C) | |||
| Symbol | Parameter | Values | Unit |
| td(on) | Turn-on Delay Time | 10 (typ.) | ns |
| tr | Rise Time | 15 (typ.) | ns |
| td(off) | Turn-Off Delay Time | 234 (typ.) | ns |
| tf | Fall Time | 17 (typ.) | ns |
| Eon | Turn-On Switching Loss | 0.25 (typ.) | mJ |
| Eoff | Turn-Off Switching Loss | 0.20 (typ.) | mJ |
| Ets | Total Switching Loss | 0.45 (typ.) | mJ |
| IGBT Switching Characteristics (TJ=150°C) | |||
| Symbol | Parameter | Values | Unit |
| td(on) | Turn-on Delay Time | 11 (typ.) | ns |
| tr | Rise Time | 13 (typ.) | ns |
| td(off) | Turn-Off Delay Time | 259 (typ.) | ns |
| tf | Fall Time | 66 (typ.) | ns |
| Eon | Turn-On Switching Loss | 0.39 (typ.) | mJ |
| Eoff | Turn-Off Switching Loss | 0.27 (typ.) | mJ |
| Ets | Total Switching Loss | 0.66 (typ.) | mJ |
| Diode Characteristics (TJ=25°C) | |||
| Symbol | Parameter | Values | Unit |
| Trr | Reverse Recovery Time (IF=8A) | 68 (typ.) | ns |
| Qrr | Reverse Recovery Charge (IF=8A) | 198 (typ.) | nC |
| Irrm | Reverse Recovery Current (IF=8A) | 5.0 (typ.) | A |
| Trr | Reverse Recovery Time (IF=15A) | 72 (typ.) | ns |
| Qrr | Reverse Recovery Charge (IF=15A) | 214 (typ.) | nC |
| Irrm | Reverse Recovery Current (IF=15A) | 5.2 (typ.) | A |
| Diode Characteristics (TJ=150°C) | |||
| Symbol | Parameter | Values | Unit |
| Trr | Reverse Recovery Time (IF=8A) | 161 (typ.) | ns |
| Qrr | Reverse Recovery Charge (IF=8A) | 609 (typ.) | nC |
| Irrm | Reverse Recovery Current (IF=8A) | 7.0 (typ.) | A |
| Trr | Reverse Recovery Time (IF=15A) | 221 (typ.) | ns |
| Qrr | Reverse Recovery Charge (IF=15A) | 866 (typ.) | nC |
| Irrm | Reverse Recovery Current (IF=15A) | 7.8 (typ.) | A |
2507211541_BL-BLG15T65FUA-A_C49328362.pdf
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