PNP Silicon Transistor BLUE ROCKET MMBT3906 with Low VCE Saturation Voltage and High DC Current Gain

Name: PNP Silicon Transistor BLUE ROCKET MMBT3906 with Low VCE Saturation Voltage and High DC Current Gain
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MMBT3906
Availability: InStock

Key Attributes

Model Number: MMBT3906

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

50nA

Pd - Power Dissipation:

300mW

Transition Frequency(fT):

250MHz

Type:

PNP

Number:

1 PNP

Current - Collector(Ic):

200mA

Collector - Emitter Voltage VCEO:

40V

Operating Temperature:

Mfr. Part #:

MMBT3906

Package:

SOT-23

Product Description

Product Overview

The MMBT3906 is a Silicon PNP transistor designed for general-purpose amplification and switching applications. It features high DC current gain (hFE) and low collector-to-emitter saturation voltage (VCE(sat)), making it suitable for demanding electronic circuits. This transistor is housed in a compact SOT-23 plastic package.

Product Attributes

Brand: (Implied from datasheet URL and content, but not explicitly stated as a brand name)
Package Type: SOT-23 Plastic Package
Transistor Type: PNP Silicon Transistor
Marking Code: H2A

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions	Min	Max
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage	VCBO	-40	V
Collector to Emitter Voltage	VCEO	-40	V
Emitter to Base Voltage	VEBO	-5.0	V
Collector Current	IC	-200	mA
Collector Power Dissipation	PC	300	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage	VCBO	-40	V	IC=-10A, IE=0
Collector to Emitter Breakdown Voltage	VCEO	-40	V	IC=-1.0mA, IB=0
Emitter to Base Breakdown Voltage	VEBO	-5.0	V	IE=-10A, IC=0
Collector Cut-Off Current	ICBO	-0.05	A	VCB=-30V, IE=0
Emitter Cut-Off Current	IEBO	-0.05	A	VEB=-3.0V, IC=0
DC Current Gain (hFE)	hFE(1)			VCE=-1.0V, IC=-10mA	100	300
DC Current Gain (hFE)	hFE(2)			VCE=-1.0V, IC=-100mA	30
DC Current Gain (hFE)	hFE(3)			VCE=-1.0V, IC=-50mA	60
DC Current Gain (hFE)	hFE(4)			VCE=-1.0V, IC=-1.0mA	80
DC Current Gain (hFE)	hFE(5)			VCE=-1.0V, IC=-0.1mA	60
Collector-Emitter Saturation voltage	VCE(sat) (1)	-0.25	V	IC=-10mA, IB=-1.0mA
Collector-Emitter Saturation voltage	VCE(sat) (2)	-0.4	V	IC=-50mA, IB=-5.0mA
Base-Emitter Saturation Voltage	VBE(sat) (1)	-0.65	-0.85	V	IC=-10mA, IB=-1.0mA
Base-Emitter Saturation Voltage	VBE(sat) (2)	-0.95	V	IC=-50mA, IB=-5.0mA
Transition Frequency	fT	250	MHz	VCE=-20V, IC=-10mA, f=100MHz
Electrical Characteristics (Ta=25)
Output Capacitance	Cob	4.5	pF	VCB=-5.0V, f=1.0MHz
Storage Time	tstg	225	ns	VCC=-3.0V, IC=-10mA, IB1=-IB2=-1.0mA
Fall Time	tf	75	ns	VCC=-3.0V, IC=-10mA, IB1=-IB2=-1.0mA
Delay Time	td	35	ns	VCC=-3.0V, VBE=-0.5V, IC=-10mA, IB1=-1.0mA
Rise Time	tr	35	ns	VCC=-3.0V, VBE=-0.5V, IC=-10mA, IB1=-1.0mA
Input Capacitance	Cib	10	pF	VEB=-0.5V, f=1.0MHz

Pin Configuration:

PIN 1: Base
PIN 2: Emitter
PIN 3: Collector

hFE Classifications & Marking:

hFE Range	Marking
100300	H2A

Package Dimensions: (Refer to Package Dimensions diagram in datasheet)

Marking Instructions:

H: Company Code
2A: Product Type Code

Temperature Profile for IR Reflow Soldering (Pb-Free):

Preheating: 25~150, Time: 60~90 sec.
Peak Temp.: 2455, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions:

Temp.: 2605
Time: 101 sec.

Packaging Specification:

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Box Dimensions (mm)
SOT-23	3,000	10	30,000	6	180,000	180120180

2410121228_BLUE-ROCKET-MMBT3906_C305435.pdf

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