86--136 6733 2386
quality High voltage PNP silicon transistor BLUE ROCKET 2N5401-B TO92 package for amplification and switching factory
quality High voltage PNP silicon transistor BLUE ROCKET 2N5401-B TO92 package for amplification and switching factory

High voltage PNP silicon transistor BLUE ROCKET 2N5401-B TO92 package for amplification and switching

Key Attributes
Model Number: 2N5401-B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
80MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
2N5401-B
Package:
TO-92
Product Description

Product Overview

The 2N5401 is a Silicon PNP transistor housed in a TO-92 plastic package. It offers high voltage capabilities and serves as a complementary pair to the 2N5551. This transistor is designed for general-purpose high voltage amplification applications.

Product Attributes

  • Package Type: TO-92 Plastic Package
  • Transistor Type: PNP Silicon
  • Complementary Pair: 2N5551

Technical Specifications

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO -180 V
Collector to Emitter Voltage VCEO -160 V
Emitter to Base Voltage VEBO -6.0 V
Collector Current - Continuous IC -600 mA
Base Current - Continuous IB -300 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cut-Off Current ICBO VCB=-180V, IE=0 -0.1 A
Emitter Cut-Off Current IEBO VEB=-6.0V, IC=0 -0.1 A
DC Current Gain hFE(1) VCE=-5.0V, IC=-10mA 50 400
DC Current Gain hFE(2) VCE=-5.0V, IC=-50mA 20
DC Current Gain hFE(3) VCE=-5.0V, IC=-1.0mA 40
Collector to Emitter Saturation Voltage VCE(sat)(1) IC=-10mA, IB=-1.0mA -0.12 -0.4 V
Collector to Emitter Saturation Voltage VCE(sat)(2) IC=-50mA, IB=-5.0mA -0.5 -0.8 V
Base to Emitter Saturation Voltage VBE(sat)(1) IC=-10mA, IB=-1.0mA -0.75 -1.0 V
Base to Emitter Saturation Voltage VBE(sat)(2) IC=-50mA, IB=-5.0mA -0.8 -1.0 V
Base to Emitter Voltage VBE VCE=-5.0V, IC=-10mA -0.7 -0.75 V
Current Gain Bandwidth Product fT VCE=-10V, IC=-10mA 50 80 MHz
Output Capacitance Cob VCB=-10V, IE=0, f=10MHz 2.5 5.0 pF
Turn On Time ton IC=-100mA, IB1=IB2=-10mA 0.1 s
Turn Off Time toff IC=-100mA, IB1=IB2=-10mA 0.2 s
Storage Time tstg IC=-100mA, IB1=IB2=-10mA 0.1 s

2410121234_BLUE-ROCKET-2N5401-B_C305398.pdf

Related Products
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature factory
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.