Silicon NPN Transistor BLUE ROCKET 2SD669AD TO252 Package Low Frequency Power Amplification Component

Name: Silicon NPN Transistor BLUE ROCKET 2SD669AD TO252 Package Low Frequency Power Amplification Component
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2SD669AD
Availability: InStock

Key Attributes

Model Number: 2SD669AD

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

10uA

Pd - Power Dissipation:

10W

Transition Frequency(fT):

140MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

1.5A

Collector - Emitter Voltage VCEO:

160V

Mfr. Part #:

2SD669AD

Package:

TO-252

Product Description

Product Overview

The 2SD669AD is a Silicon NPN transistor designed for low-frequency power amplification. It is housed in a TO-252 plastic package and serves as a complementary pair to the 2SB649AD. This transistor is suitable for various power amplification applications.

Product Attributes

Brand: FSB (implied by datasheet URL and marking)
Product Type: NPN Silicon Transistor
Package Type: TO-252 Plastic Package
Complementary Pair: 2SB649AD
Marking Code: BR (Company Code), D669AD (Product Type), B (hFE Classifications), **** (Lot No. Code)

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	180	V
Collector to Emitter Voltage	VCEO	160	V
Emitter to Base Voltage	VEBO	5.0	V
Collector Current - Continuous	IC	1.5	A
Collector Current Continuous(Pulse)	ICP	3.0	A
Collector Power Dissipation	PC	1.0	W
Collector Power Dissipation (Tc=25)	PC	10	W
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=1.0mA, IE=0			180	V
Collector to Emitter Breakdown Voltage	VCEO	IC=10mA, RBE=			160	V
Emitter to Base Breakdown Voltage	VEBO	IE=1.0mA, IC=0			5.0	V
Collector Cut-Off Current	ICBO	VCB=160V, IE=0			10	A
DC Current Gain	hFE(1)	VCE=5.0V, IC=150mA	60		320
DC Current Gain	hFE(2)	VCE=5.0V, IC=500mA			30
Base to Emitter Voltage	VBE	VCE=5.0V, IC=150mA			1.5	V
Collector to Emitter Saturation Voltage	VCE(sat)	IC=500mA, IB=50mA			1.0	V
Transition Frequency	fT	VCE=5.0V, IC=150mA		140		MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1.0MHz			14	pF

Pin Assignments

PIN 1: Base
PIN 2, 4: Collector
PIN 3: Emitter

hFE Classifications & Marking

Symbol	hFE Range
B	60120
C	100200
D	160320

Soldering Profile (Pb-Free)

Preheating: 25~150, Time: 60~90 sec.
Peak Temp.: 2455, Duration: 50.5 sec.
Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

Temperature: 2605
Time: 101 sec.

Packaging Specifications

REEL Package

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (Reel)	Dimension (Inner Box)	Dimension (Outer Box)
TO-252	2,500	2	5,000	5	25,000	1316	36036050	385257392

TUBE Package

Package Type	Units/Tube	Tubes/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (Tube)	Dimension (Inner Box)	Dimension (Outer Box)
TO-251/252	75	48	3,600	5	18,000	52620.55.25	55516450	575290180

2410121236_BLUE-ROCKET-2SD669AD_C7429868.pdf

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