power control transistor BLUE ROCKET MMBTA44 NPN silicon with high voltage and low saturation voltage

Key Attributes
Model Number: MMBTA44
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.5W
Transition Frequency(fT):
-
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
MMBTA44
Package:
SOT-23
Product Description

Product Overview

The MMBTA44 is a high-voltage, low-saturation voltage NPN silicon transistor housed in a SOT-23 plastic package. It is designed for high-voltage control circuits and offers excellent performance characteristics for demanding applications. The transistor features a high breakdown voltage and low saturation voltage, making it suitable for efficient power management and control.

Product Attributes

  • Package Type: SOT-23 Plastic Package
  • Transistor Type: NPN Silicon Transistor
  • Marking Code: H3D
  • Brand/Manufacturer: FSB (implied by datasheet URL)

Technical Specifications

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 500 V
Collector to Emitter Voltage VCEO 400 V
Emitter to Base Voltage VEBO 6.0 V
Collector Current IC 300 mA
Collector Power Dissipation (Ambient) PC 350 mW
Collector Power Dissipation (Case) PC(TC=25) 1.5 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Parameter Symbol Test Conditions Min Typ Max Unit
Collector to Base Breakdown Voltage VCBO IC=100A, IE=0 500 V
Collector to Emitter Breakdown Voltage VCEO IC=1.0mA, IB=0 400 V
Emitter to Base Breakdown Voltage VEBO IE=10A, IC=0 6.0 V
Collector Cut-Off Current ICBO VCB=400V, IE=0 0.1 A
Collector Cut-Off Current ICEO VCE=400V, VBE=0 0.5 A
Emitter Cut-Off Current IEBO VCE=4.0V, IC=0 0.1 A
DC Current Gain (hFE Class 1) hFE(1) VCE=10V, IC=10mA 50 200
DC Current Gain (hFE Class 2) hFE(2) VCE=10V, IC=100mA 40
DC Current Gain (hFE Class 3) hFE(3) VCE=10V, IC=50mA 45
DC Current Gain (hFE Class 4) hFE(4) VCE=10V, IC=1.0mA 40
Collector-Emitter Saturation Voltage VCE(sat)(1) IC=1.0mA, IB=0.1mA 0.4 V
Collector-Emitter Saturation Voltage VCE(sat)(2) IC=10mA, IB=1.0mA 0.5 V
Collector-Emitter Saturation Voltage VCE(sat)(3) IC=50mA, IB=5.0mA 0.75 V
Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1.0mA 0.75 V
Output Capacitance Cob VCB=20V, IE=0, f=1.0MHz 7.0 pF

Applications

  • High voltage control circuits

Packaging Specifications

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Reel Dimensions Inner Box Dimensions Outer Box Dimensions
SOT-23 3,000 10 30,000 6 180,000 78 180120180 390385205

Soldering Information

Temperature Profile for IR Reflow Soldering (Pb-Free):

  • Preheating: 25~150, Time: 60~90 sec.
  • Peak Temp.: 2455, Duration: 50.5 sec.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions:

  • Temperature: 2605
  • Time: 101 sec.

2410121238_BLUE-ROCKET-MMBTA44_C305465.pdf

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