General purpose high voltage NPN transistor BLUE ROCKET MMBT5551T in SOT89 package for amplification
Key Attributes
Model Number:
MMBT5551T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
110MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMBT5551T
Package:
SOT-89
Product Description
Product Overview
The MMBT5551T is a high-voltage Silicon NPN transistor housed in a SOT-89 plastic package. It offers high breakdown voltage and serves as a complementary pair with the MMBT5401T. This halogen-free product is designed for general-purpose high-voltage amplification applications.
Product Attributes
- Package Type: SOT-89
- Transistor Type: NPN Silicon
- Certifications: Halogen-free
- Complementary Pair: MMBT5401T
Technical Specifications
General Purpose High Voltage Amplifier
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Collector to Base Voltage | VCBO | 180 | V | |
| Collector to Emitter Voltage | VCEO | 160 | V | |
| Emitter to Base Voltage | VEBO | 6.0 | V | |
| Collector Current - Continuous | IC | 600 | mA | |
| Collector Power Dissipation | PC | 500 | mW | (Ta=25) |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55150 | ||
| Collector Cut-Off Current | ICBO | 0.1 | A | VCB=180V, IE=0 |
| Emitter Base Cut-Off Current | IEBO | 0.1 | A | VEB=6.0V, IC=0 |
| DC Current Gain (hFE) | hFE(1) | 50400 | VCE=5.0V, IC=10mA | |
| DC Current Gain (hFE) | hFE(2) | 20160 | VCE=5.0V, IC=50mA | |
| DC Current Gain (hFE) | hFE(3) | 40190 | VCE=5.0V, IC=1.0mA | |
| Collector to Emitter Saturation Voltage | VCE(sat) (1) | 0.060.15 | V | IC=10mA, IB=1.0mA |
| Collector to Emitter Saturation Voltage | VCE(sat) (2) | 0.090.3 | V | IC=50mA, IB=5.0mA |
| Emitter to Base Saturation Voltage | VBE(sat) (1) | 0.71.0 | V | IC=10mA, IB=1.0mA |
| Emitter to Base Saturation Voltage | VBE(sat) (2) | 0.81.0 | V | IC=50mA, IB=5.0mA |
| Emitter to Base Voltage | VBE | 0.680.75 | V | VCE=5.0V, IC=10mA |
| Transition Frequency | fT | 50110 | MHz | VCE=10V, IC=10mA |
| Collector Output Capacitance | Cob | 2.25.0 | pF | VCB=10V, IE=0, f=1.0MHz |
| Turn-on Time | ton | 0.3 | s | IC=100mA, IB1=-IB2=10mA |
| Turn-off Time | toff | 0.4 | s | |
| Storage Time | tstg | 0.2 | s |
Pin Configuration
| Pin | Function |
|---|---|
| 1 | Base |
| 2 | Collector |
| 3 | Emitter |
Marking
| hFE Class | Marking |
|---|---|
| A (50150) | HG1A |
| B (100300) | HG1B |
| C (200400) | HG1C |
Packaging
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Outer Box | Units/Outer Box | Package Dimension |
|---|---|---|---|---|---|---|
| SOT-89 | 1,000 | 7 | 7,000 | 8 | 56,000 | 712 |
Soldering Profile (Pb-Free)
- Preheating: 150180, 6090 seconds
- Peak Temperature: 2455, Duration: 50.5 seconds
- Cooling Speed: 210/sec
Resistance to Soldering Heat
- Temperature: 2605
- Time: 101 seconds
2410121228_BLUE-ROCKET-MMBT5551T_C22356953.pdf
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