High Collector Current PNP Transistor BLUE ROCKET S8550-C for Portable Radio Amplifier Applications

Name: High Collector Current PNP Transistor BLUE ROCKET S8550-C for Portable Radio Amplifier Applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: S8550-C
Availability: InStock

Key Attributes

Model Number: S8550-C

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

625mW

Transition Frequency(fT):

200MHz

Type:

PNP

Number:

1 PNP

Current - Collector(Ic):

800mA

Collector - Emitter Voltage VCEO:

25V

Operating Temperature:

Mfr. Part #:

S8550-C

Package:

TO-92

Product Description

Product Overview

The S8550 is a silicon PNP transistor in a TO-92 plastic package. It is designed for high collector current (IC) and collector power dissipation (PC), serving as a complementary pair to the S8050. This transistor is suitable for amplifier applications in portable radios operating in class B push-pull configurations.

Product Attributes

Brand: Fsb (implied by datasheet URL)
Package Type: TO-92 Plastic Package
Transistor Type: PNP Silicon Transistor
Complementary Pair: S8050

Technical Specifications

Parameter	Symbol	Rating	Unit
Collector to Base Voltage	VCBO	-40	V
Collector to Emitter Voltage	VCEO	-25	V
Emitter to Base Voltage	VEBO	-6.0	V
Collector Current - Continuous	IC	-800	mA
Base Current - Continuous	IB	-200	mA
Collector Power Dissipation	PC	625	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Electrical Characteristics (Ta=25)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Breakdown Voltage	VCBO	IC=-0.1mA, IE=0	-40			V
Collector to Emitter Breakdown Voltage	VCEO	IC=-2.0mA, IB=0	-25			V
Emitter to Base Breakdown Voltage	VEBO	IE=-0.1mA, IC=0	-6.0			V
Collector Cut-Off Current	ICBO	VCB=-35V, IE=0		-0.1		A
Emitter Cut-Off Current	IEBO	VEB=-6.0V, IC=0		-0.1		A
DC Current Gain (hFE(1))	hFE(1)	VCE=-1.0V, IC=-100mA	85		300
DC Current Gain (hFE(2))	hFE(2)	VCE=-1.0V, IC=-500mA		40
DC Current Gain (hFE(3))	hFE(3)	VCE=-1.0V, IC=-5.0mA		45
Collector to Emitter Saturation Voltage	VCE(sat)	IC=-500mA, IB=-50mA		-0.28	-0.6	V
Base to Emitter Saturation Voltage	VBE(sat)	IC=-500mA, IB=-50mA		-0.98	-1.2	V
Base to Emitter Voltage	VBE	VCE=-1.0V, IC=-10mA		-0.66	-1.0	V
Transition Frequency	fT	VCE=-10V, IC=-50mA	100		200	MHz
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=1.0MHz			15	pF

Packaging Specifications

Package Type	Units/Bag	Bags/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Bag Dimensions (mm)	Inner Box Dimensions (mm)	Outer Box Dimensions (mm)
BULK (TO-92)	1,000	10	10,000	5	50,000	135190	237172102	560245195
BULK (TO-92)	1,000	10	10,000	10	100,000	135190	237172102	560245375
AMMO (TO-92)	3,000	1	120	10	30,000	32823042	480346235 (Small)	547407268 (Large)

Marking Instructions

The marking on the product consists of:

BR: Company Code
S8550: Product Type
B: hFE Classification Symbol
****: Lot No. Code (changes with Lot No.)

Example Marking: S8550 **** B BR

Soldering Profile

Temperature Profile for Dip Soldering (Pb-Free):

Preheating: 25~150, Duration: 60~90 seconds
Peak Temperature: 2555, Duration: 50.5 seconds
Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions:

Temperature: 2705
Time: 101 seconds

2410121236_BLUE-ROCKET-S8550-C_C2844047.pdf

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