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quality N Channel MOSFET SOT23 3 Package BLUE ROCKET BRCS3400MCQ with 30V Drain Source Voltage and 5.8A Current factory
quality N Channel MOSFET SOT23 3 Package BLUE ROCKET BRCS3400MCQ with 30V Drain Source Voltage and 5.8A Current factory

N Channel MOSFET SOT23 3 Package BLUE ROCKET BRCS3400MCQ with 30V Drain Source Voltage and 5.8A Current

Key Attributes
Model Number: BRCS3400MCQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
32mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.45V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Output Capacitance(Coss):
99pF
Input Capacitance(Ciss):
1.03nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
BRCS3400MCQ
Package:
SOT-23-3
Product Description

Product Overview

The BRCS3400MCQ is an N-Channel MOSFET in a SOT23-3 plastic package, designed for high reliability and automotive applications. It features a Drain-Source Voltage (VDS) of 30V and a continuous Drain Current (ID) of 5.8A at VGS = 10V. With low On-State Resistance (RDS(ON)) values, including < 32m at VGS = 10V and < 36m at VGS = 4.5V, this AEC-Q101 qualified product is suitable for load switch and Pulse Width Modulation (PWM) applications, meeting stringent automotive requirements. It is a halogen-free product.

Product Attributes

  • Package Type: SOT23-3
  • Technology: N-Channel MOSFET
  • Certifications: AEC-Q101 Qualified, Halogen-Free
  • Marking Code: QA0H

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDS 30 V
Drain Current Continuous ID 5.8 A
Drain Current- Continuous (Ta=70) ID(Ta=70) 4.9 A
Pulsed Drain Current IDM 30 A
Gate-Source Voltage VGS 12 V
Total Power Dissipation PD 1.4 W
Total Power Dissipation (Ta=70) PD(Ta=70) 1.0 W
Operating and Storage Junction Temperature Range TJ, TSTG -55 150
Electrical Characteristics (Ta=25)
DrainSource Breakdown Voltage BVDSS VGS=0V, ID=250A 30 V
Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 A
Zero Gate Voltage Drain Current (TJ=55) IDSS VDS=24V, VGS=0V 5 A
GateBody Leakage IGSS VGS=12V, VDS=0V 0.1 A
OnState Drain Current ID(on) VGS=4.5V, VDS=5V 30 A
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 0.65 1.1 1.45 V
Static DrainSource OnResistance RDS(on)(1) VGS=10V, ID=5.8A 29 32 m
Static DrainSource OnResistance (TJ=125) RDS(on)(2) VGS=10V, ID=5.8A 39 m
Static DrainSource OnResistance RDS(on)(3) VGS=4.5V, ID=5A 32 36 m
Static DrainSource OnResistance RDS(on)(4) VGS=2.5V, ID=4A 40 56 m
Forward Transconductance gFS VDS=5V, ID=5A 10 15 S
DrainSource Diode Forward Voltage VSD VGS=0V, IS=1A 0.77 1 V
Input Capacitance Ciss VDS=15V, VGS=0V, f=1MHz 823 1030 pF
Output Capacitance Coss VDS=15V, VGS=0V, f=1MHz 99 pF
Reverse Transfer Capacitance Crss VDS=15V, VGS=0V, f=1MHz 77 pF
TurnOn Delay Time td(on) VGS=10V, RL=2.7, VDS=15V, RGEN=3 3.3 5 ns
TurnOn Rise Time tr VGS=10V, RL=2.7, VDS=15V, RGEN=3 4.8 7 ns
TurnOff Delay Time td(off) VGS=10V, RL=2.7, VDS=15V, RGEN=3 26.3 40 ns
TurnOff Fall Time tf VGS=10V, RL=2.7, VDS=15V, RGEN=3 4.1 6 ns
Total Gate Charge Qg VGS=4.5V, VDS=15V, ID=5.8A 9.7 12 nC
Gate Source Charge Qgs VGS=4.5V, VDS=15V, ID=5.8A 1.6 nC
Gate Drain Charge Qg VGS=4.5V, VDS=15V, ID=5.8A 3.1 nC
Body Diode Reverse Recovery Time trr IF=5A, dI/dt=100A/s 16 20 ns
Body Diode Reverse Recovery Charge Qrr IF=5A, dI/dt=100A/s 8.9 12 nC
Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 1.2 3.6

2411121107_BLUE-ROCKET-BRCS3400MCQ_C36499075.pdf

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