BLUE ROCKET BRCS4306SC transistor featuring N Channel enhancement mode technology for power management in SMPS
Key Attributes
Model Number:
BRCS4306SC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
1 N-channel
Output Capacitance(Coss):
125pF
Input Capacitance(Ciss):
760pF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
BRCS4306SC
Package:
SOP-8
Product Description
Product Overview
The BRCS4306SC is an N-Channel Enhancement Mode Field Effect Transistor designed for high-side switching in Switched-Mode Power Supplies (SMPS) and general-purpose applications. It features a SOP-8 plastic package and offers a drain-source voltage of 30V and a continuous drain current of 13A at VGS = 10V. With low on-state resistance (RDS(ON) < 11.5m at VGS = 10V and RDS(ON) < 15.5m at VGS = 4.5V), this transistor is suitable for efficient power management in various electronic devices.
Product Attributes
- Brand: FSB (implied by http://www.fsbrec.com)
- Package Type: SOP-8 Plastic Package
- Transistor Type: N-Channel Enhancement Mode Field Effect Transistor
- Marking Code: BR 4306 **** (BR: Company Code, 4306: Product Type, ****: Lot No. Code)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID (TA=25) | 13 | A | |||
| Continuous Drain Current | ID (TA=70) | 10.4 | A | |||
| Pulsed Drain Current | IDM | B | 100 | A | ||
| Avalanche Current | IAS | C | 22 | A | ||
| Avalanche energy (L=0.1mH) | EAS | C | 24 | mH | ||
| Power Dissipation | PD (TA=25) | B | 3.1 | W | ||
| Power Dissipation | PD (TA=70) | B | 2 | W | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient | RJA | t 10s A | 31 | 40 | /W | |
| Maximum Junction-to-Ambient | RJA | Steady-State D | 59 | 75 | /W | |
| Maximum Junction-to-Lead | RJL | Steady-State | 16 | 24 | /W | |
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | B | 30 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V, TJ=55 | 5.0 | A | ||
| Gate-Body leakage current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.5 | 1.9 | 2.5 | V |
| On state drain current | ID(on) | VDS=5V, VGS=10V | 100 | A | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=12A | 9.5 | 11.5 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=12A, TJ=125 | 14 | 17 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=10A | 12.5 | 15.5 | m | |
| Forward Transconductance | gFS | VDS=5.0V, ID=12A | 45 | S | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.75 | 1 | V | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | |||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1.0MHz | 760 | pF | ||
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1.0MHz | 125 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1.0MHz | 70 | pF | ||
| Gate resistance | Rg | VDS=0V, VGS=0V, f=1.0MHz | 0.8 | 1.6 | 2.4 | |
| Total Gate Charge (10V) | Qg | VGS=10V, VDS=15V, ID=12A | 14 | 25 | nC | |
| Total Gate Charge (4.5V) | Qg | VGS=4.5V, VDS=15V, ID=12A | 6.6 | 12 | nC | |
| Gate-Source Charge | Qgs | VGS=4.5V, VDS=15V, ID=12A | 2.4 | nC | ||
| Gate-Drain Charge | Qg | VGS=4.5V, VDS=15V, ID=12A | 3 | nC | ||
| Turn-On Delay Time | td(on) | VDS=15 V, VGS=10V, RL=1.25, RGEN=3 | 4.4 | ns | ||
| Turn-On Rise Time | tr | VDS=15 V, VGS=10V, RL=1.25, RGEN=3 | 9 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=15 V, VGS=10V, RL=1.25, RGEN=3 | 17 | ns | ||
| Turn-Off Fall Time | tf | VDS=15 V, VGS=10V, RL=1.25, RGEN=3 | 6 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=12A, dI/dt=100A/s | 7 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=12A, dI/dt=100A/s | 8 | nC | ||
2410121252_BLUE-ROCKET-BRCS4306SC_C22449003.pdf
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