Halogen free N channel MOSFET BLUE ROCKET BRCS20N15DP with low gate charge and high pulsed drain current rating

Name: Halogen free N channel MOSFET BLUE ROCKET BRCS20N15DP with low gate charge and high pulsed drain current rating
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BRCS20N15DP
Availability: InStock

Key Attributes

Model Number: BRCS20N15DP

Product Custom Attributes

Drain To Source Voltage:

150V

Current - Continuous Drain(Id):

20A

Operating Temperature -:

-55℃~+150℃

RDS(on):

90mΩ@10V

Gate Threshold Voltage (Vgs(th)):

4V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

58pF

Number:

1 N-channel

Input Capacitance(Ciss):

1.7nF@25V

Pd - Power Dissipation:

105W

Gate Charge(Qg):

22nC@10V

Mfr. Part #:

BRCS20N15DP

Package:

TO-252

Product Description

Product Overview

The BRCS20N15DP is an N-channel MOSFET in a TO-252 plastic package, designed for low voltage applications. It features low RDS(on), low gate charge, low Crss, and fast switching speeds. This product is halogen-free and is suited for automotive circuits, DC/DC converters, high-efficiency power management in portable and battery-operated products, and power management interface cards for TVs or monitors.

Product Attributes

Brand: FS (implied by URL)
Package Type: TO-252 Plastic Package
Halogen-Free: Yes

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions	Typ
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDS	150	V
Gate-Source Voltage	VGS	±20	V
Continuous Drain Current	ID	20	A	TC=25°C
Continuous Drain Current	ID	13.5	A	TC=100°C
Pulsed Drain Current	IDM	35	A	C
Avalanche Current	IAS	14.5	A	C
Avalanche energy	EAS	12.5	mJ	L=0.1mH C
Power Dissipation	PD	105	W	TC=25°C B
Power Dissipation	PD	41.5	W	TC=100°C B
Junction and Storage Temperature Range	TJ, TSTG	-55 to 150	°C
Maximum Junction-to-Ambient	RθJA	20	°C/W	A t ≤ 10s
Maximum Junction-to-Ambient	RθJA	50	°C/W	AD Steady-State
Maximum Junction-to-Case Steady-State	RθJc	1.4	°C/W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	150	V	ID=250µA, VGS=0V B	156
Zero Gate Voltage Drain Current	IDSS	1	µA	VDS=150V, VGS=0V
Zero Gate Voltage Drain Current	IDSS	5	µA	TJ=125°C
Gate-Body leakage current	IGSS	±100	nA	VDS=0V, VGS=±20V
Gate Threshold Voltage	VGS(th)	2	V	VDS=VGSID=250µA	4
Static Drain-Source On-Resistance	RDS(ON)	59	mΩ	VGS=10V, ID=10A	90
Static Drain-Source On-Resistance	RDS(ON)	62	mΩ	VGS=7V, ID=10A	110
Diode Forward Voltage	VSD	1	V	IS=1A,VGS=0V
Electrical Characteristics (Ta=25)
Input Capacitance	Ciss	1700	pF	VGS=0V, VDS=25V, f=1MHz
Output Capacitance	Coss	4.5
Reverse Transfer Capacitance	Crss	58
Gate resistance	Rg	3.4	Ω	VGS=0V VDS=0V f=1MHz
Total Gate Charge Qg(10V)	Qg(10V)	15.5	nC	VGS=10V, VDS=75V, ID=10A	22
Total Gate Charge Qg(4.5V)	Qg(4.5V)	7	nC		10
Gate Source Charge	Qgs	4	nC
Gate Drain Charge	Qgd	1.2	nC
Turn-On Delay Time	tD(on)	6.5	ns	VGS=10V, VDS=75V, RL=7.5Ω, RGEN=3Ω
Turn-On Rise Time	tr	5	ns
Turn-Off Delay Time	tD(off)	23	ns
Turn-Off Fall Time	tf	2.5	ns
Body Diode Reverse Recovery Time	trr	37	ns	IF=10A, dI/dt=500A/ms
Body Diode Reverse Recovery Charge	Qrr	265	nC	IF=10A, dI/dt=500A/ms

Packaging

Reel Package

Package Type	Units/Reel	Reels/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (unit: mm³)
TO-252	2,500	2	5,000	6	30,000	13”×16, 360×360×50, 380×335×366

Tube Package

Package Type	Units/Tube	Tubes/Inner Box	Units/Inner Box	Inner Boxes/Outer Box	Units/Outer Box	Dimension (unit: mm³)
TO-251/252	75	48	3,600	5	18,000	526×20.5×5.25, 555×164×50, 575×290×180

Marking Instructions

BR: Company Code
20N15: Product Type Code
****: Lot No. Code (changes with Lot No.)

Marking example: BR **** 20N15

2410121252_BLUE-ROCKET-BRCS20N15DP_C22449020.pdf

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