Low RDS ON Power MOSFET BORN BMI10N881 ideal for MB VGA Vcore and SMPS second synchronous rectifier
Key Attributes
Model Number:
BMI10N881
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
88mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Input Capacitance(Ciss):
890pF
Output Capacitance(Coss):
60pF
Pd - Power Dissipation:
34.5W
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
BMI10N881
Package:
TO-252-2
Product Description
Product Overview
The BMI10N881 is an N-Channel Power MOSFET utilizing Trench Technology. It offers low RDS(ON), low gate charge, and low gate resistance, making it suitable for power switching applications. Key applications include MB/VGA Vcore, SMPS 2nd Synchronous Rectifier, and lighting.
Product Attributes
- Brand: Not explicitly stated, but associated with http://www.born-tw.com
- Origin: Not explicitly stated
- Material: Not explicitly stated
- Color: Not explicitly stated
- Certifications: Not explicitly stated
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Features | ||||||
| Drain-Source Breakdown Voltage | VBR(DSS) | 100 | V | |||
| Drain Current | ID | TC=25C | 15 | A | ||
| Static Drain-source On Resistance | RDS(ON)@10V | 88 | m | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TA=25C unless otherwise specified) | 100 | V | ||
| Gate - Source Voltage | VGS | 20 | V | |||
| Drain Current | ID | TC=25C | 15 | A | ||
| Drain Current | ID | TC=100C | 8.5 | A | ||
| Drain Current | ID | TA=25C | 5 | A | ||
| Drain Current-Pulse(1) | IDM | 60 | A | |||
| Single Pulsed Avalanche Current | IAS | 12.5 | A | |||
| Single Pulsed Avalanche Energy | EAS | 16 | mJ | |||
| Power Dissipation | PD | TC=25C | 34.5 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 50 | C/W | |||
| Thermal Resistance From Junction to Case | RJC | 3.6 | C/W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS=0V | 1 | uA | ||
| Gate-Body Leakage Current | IGSS | VGS = 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID=250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-source On Resistance | RDS(ON) | VGS=10V, ID=12A | 88 | 110 | m | |
| Static Drain-source On Resistance | RDS(ON) | VGS=4.5V, ID=8A | 96 | 140 | m | |
| Forward Transconductance | gfs | VDS=5V, ID=4.5A | 13 | S | ||
| Input capacitance | Ciss | VDS =25V, VGS =0V, f = 1MHz | 890 | pF | ||
| Output capacitance | Coss | 60 | ||||
| Reverse transfer capacitance | Crss | 25 | ||||
| Static Drain-source On Resistance | Rg | VGS=VDS=0V, f=1MHz | 1.5 | |||
| Turn-on delay time | Td(on) | VDD=25V, VGS=10V, RG =1, RL =5 | 14.2 | nS | ||
| Turn-on Rise time | Tr | 33.7 | ||||
| Turn -Off Delay Time | Td(off) | 40.2 | ||||
| Turn -Off Fall time | Tf | 6 | ||||
| Gate to Drain Charge | Qg | VDS=80V, VGS=10V, ID=10A | 24 | nC | ||
| Gate to Source Charge | Qgs | 5 | ||||
| Gate to Drain Charge | Qg | 8 | ||||
| Diode Forward Voltage | VSD | VGS=0V,IS=1A | 1.2 | V | ||
| Continuous Source Current | IS | 12 | A | |||
| Pulsed Sourse Current | ISM | 24 | ||||
| Reverse Recovery Time | Trr | IF=4.5A, dIF/dt=500A/s | 21 | ns | ||
| Reverse Recovery Charge | Qrr | 27.3 | nC | |||
| Package Dimensions (TO-252-2) | ||||||
| Symbol | Millimeters MIN. | Millimeters MAX. | Inches MIN. | Inches MAX. | ||
| A | 2.200 | 2.400 | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | ||
| D2 | 4.830 TYP. | 0.190 TYP. | ||||
| E | 6.000 | 6.200 | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | 0.386 | 0.409 | ||
| L1 | 2.900 TYP. | 0.114 TYP. | ||||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | ||
| L3 | 1.600 TYP. | 0.063 TYP. | ||||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | |||
| 0 | 8 | 0 | 8 | |||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| V | 5.350 TYP. | 0.211 TYP. | ||||
2505301710_BORN-BMI10N881_C49009906.pdf
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